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OFET Performance (ofet + performance)

Distribution by Scientific Domains

Polymers and Materials Science	80%

Selected Abstracts

Synthesis, Characterization and OFET Properties of Amphiphilic Mixed (Phthalocyaninato)(porphyrinato)europium(III) Complexes

EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, Issue 7 2009
Pan Ma
Abstract Amphiphilic mixed (phthalocyaninato)(porphyrinato)europium(III) triple-decker complexes Eu2[Pc(15C5)4]2[T(C10H21)4P] (1) and Eu2[Pc(15C5)4]2[TPOPP] (2) [H2Pc(15C5)4 = 2,3,9,10,16,17,23,24-tetrakis(15-crown-5)phthalocyanine; H2T(C10H21)4P = meso -5,10,15,20-tetra- n -decylporphyrin, H2TPOPP = meso -5,10,15,20-tetrakis(4-pentyloxyphenyl)porphyrin] were designed and synthesized by the raise-by-one-story method. These novel sandwich triple-decker complexes were characterized by a wide range of spectroscopic methods, and they were also electrochemically studied. Highly ordered films were fabricated by the Langmuir,Blodgett (LB) technique into organic field-effect transistors (OFETs). The devices display good OFET performance with a carrier mobility in the range 0.03,0.78 cm2,V,1,s,1. As expected, the devices show a low threshold voltage range from ,1.19 to ,4.34 V. The mobility of compound 1 reaches 0.78 cm2,V,1,s,1, which is the highest value so far achieved for LB film-based OFETs, as a result of the narrow energy gap (1.04 eV) of this compound.(© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009) [source]

Organic Electronics: High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N,-Ditridecyl Perylene Diimide Based Field-Effect Transistors: Improving Performance and Stability with Thermal Treatment (Adv. Funct.

ADVANCED FUNCTIONAL MATERIALS, Issue 16 2010
Mater.
Abstract A novel application of ethylene-norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field-effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally-treated N,N, -ditridecyl perylene diimide (PTCDI-C13)-based n-type FETs using a COC/SiO2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI-C13 domains grown on the COC/SiO2 gate dielectric increases significantly. The resulting n-type FETs exhibit high atmospheric field-effect mobilities, up to 0.90 cm2 V,1 s,1 in the 20 V saturation regime and long-term stability with respect to H2O/O2 degradation, hysteresis, or sweep-stress over 110 days. By integrating the n-type FETs with p-type pentacene-based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized. [source]

High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N,-Ditridecyl Perylene Diimide Based Field-Effect Transistors: Improving Performance and Stability with Thermal Treatment

ADVANCED FUNCTIONAL MATERIALS, Issue 16 2010
Jaeyoung Jang
Abstract A novel application of ethylene-norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field-effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally-treated N,N, -ditridecyl perylene diimide (PTCDI-C13)-based n-type FETs using a COC/SiO2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI-C13 domains grown on the COC/SiO2 gate dielectric increases significantly. The resulting n-type FETs exhibit high atmospheric field-effect mobilities, up to 0.90 cm2 V,1 s,1 in the 20 V saturation regime and long-term stability with respect to H2O/O2 degradation, hysteresis, or sweep-stress over 110 days. By integrating the n-type FETs with p-type pentacene-based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized. [source]

Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors,

ADVANCED FUNCTIONAL MATERIALS, Issue 2 2008
L. Cheng
Abstract We report on electric-field-induced irreversible structural modifications in pentacene thin films after long-term operation of organic field-effect transistor (OFET) devices. Micro-Raman spectroscopy allows for the analysis of the microstructural modifications of pentacene in the small active channel of OFET during device operation. The results suggest that the herringbone packing of pentacene molecules in a solid film is affected by an external electric field, particularly the source-to-drain field that parallels the a,b lattice plane. The analysis of vibrational frequency and Davydov splitting in the Raman spectra reveals a singular behavior suggesting a reduced separation distance between pentacene molecules after long-term operations and, thus, large intermolecular interactions. These results provide evidence for improved OFET performance after long-term operation, related to the microstructures of organic semiconductors. It is known that the application of large electric fields alters the semiconductor properties of the material owing to the generation of defects and the trapping of charges. However, we first suggest that large electric fields may alter the molecular geometry and further induce structural phase transitions in the pentacene films. These results provide a basis for understanding the improved electronic properties in test devices after long-term operations, including enhanced field-effect mobility, improved on/off current ratio, sharp sub-threshold swing, and a slower decay rate in the output drain current. In addition, the effects of source-to-drain electric field, gate electric field, current and charge carriers, and thermal annealing on the pentacene films during OFET operations are discussed. [source]

Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility,

ADVANCED MATERIALS, Issue 19 2005
M. DeLongchamp
Near-edge X-ray fine structure spectroscopy is used to measure simultaneous chemical conversion, molecular ordering, and defect formation in soluble oligothiophene precursor films. Film structure is correlated to OFET performance. Molecular orientation is determined by evaluating antibonding orbital overlap with the polarized electric field vector of incident soft X-rays (see Figure and cover). Upon conversion, the molecules become vertically oriented, allowing , overlap in the plane of hole transport. [source]