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Oxygen Ions (oxygen + ion)
Selected AbstractsObservation of orientational disorder in the hexagonal stuffed tridymite Sr0.864Eu0.136Al2O4 by the maximum-entropy methodJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 5 2004H. Yamada The crystal structure of a strontium europium aluminate, Sr0.864Eu0.136Al2O4, with a novel hexagonal form was investigated by a combination of Rietveld analysis and the maximum-entropy method (MEM) with synchrotron X-ray powder diffraction data. The electron density image calculated by the MEM/Rietveld method revealed that the apical oxygen ion in the AlO4 tetrahedron has a broad distribution corresponding to an extraordinarily large atomic displacement parameter. This structure could be expressed by a split-atom model, with which the Rietveld refinement gave Rwp = 2.99% and RB = 4.16%. Subsequently, MEM-based pattern fitting (MPF) decreased the R factors to Rwp = 2.81% and RB = 2.34% and the electron density image clearly showed that the apical oxygen ions of the AlO4 tetrahedra are split over three sites around a threefold axis involving an elongated distribution of the residual O ions along the c axis. These results suggest that AlO4 tetrahedra in Sr0.864Eu0.136Al2O4 are orientationally disordered. [source] Design of Ceramic Materials for Chemical Sensors: Effect of SmFeO3 Processing on Surface and Electrical PropertiesJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 2 2001Hiromichi Aono Perovskite-type SmFeO3 powders were prepared by the thermal decomposition of a heteronuclear complex, Sm(Fe(CN)6)·4H2O and by solid-state reaction between the corresponding single oxides, Sm2O3 and Fe2O3. The thermal decomposition behavior of the complex was studied by thermogravimetric analysis. X-ray diffractometry was used to investigate the structure of the products from the complex thermal decomposition and the formation of SmFeO3 from the oxide mixture. Powders prepared by both methods were used to deposit thick films onto alumina substrates with comb-type gold electrodes. The microstructure and chemical homogeneity of the film surfaces were investigated by scanning electron microscopy and Auger electron spectroscopy. Thick SmFeO3 single-phase films having a homogeneous elemental distribution on the surface were obtained when powder prepared by thermal decomposition of the complex was used for deposition, even when the powder was fired at low temperature (800°C). Surface chemical analysis was performed by X-ray photoelectron spectroscopy (XPS). The O 1s XPS line was deconvoluted into two peaks, attributed to adsorbed oxygen (Oad) and oxygen in the lattice (Olattice). Quantitative analysis showed that the surface coverage of iron, expressed as Fe/(Fe + Sm), was larger for the films prepared using the solid-state reacted powder. Although the Olattice/(Fe + Sm) atomic ratio was not influenced by the processing procedures (and, thus, by iron surface coverage), the amount of Oad decreased with increasing iron surface coverage. A model of the SmFeO3 surface was used to determine that the outermost layer of the perovskite-type SmFeO3 prepared from the complex consisted mainly of samarium ions that could each bond four adsorbed oxygen ions. A single oxygen ion could adsorb onto an iron ion, and therefore, the content of adsorbed oxygen was lower for the film prepared from the solid-state reacted powders, which showed larger iron surface coverage. Electrical conductance measurements, performed with increasing temperature in different gaseous environments, confirmed these findings. Higher conductances and lower activation energies were observed for the films with larger samarium surface coverage. [source] Spin-polarized charge transport through ionic clusters of magnetic oxidesPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 1 2006G. A. Gehring Abstract We analyze the spin-controlled charge transfer through a heterostructure consisting of one octahedral and one tetrahedral iron,oxygen ionic clusters, which are site-coupled, sharing an oxygen ion. A number of charge carriers can be manipulated by valence-uncompensated doping. The electron-energy structure of the clusters and that of the heterostructure are found on the basis of the Anderson model. Current,voltage (I,V ) characteristics, derived from the Landauer-like formula, turn out to be highly sensitive to the position of the Fermi level. We also calculated the magnetoresistance for the heterostructure with different orientations of the magnetic field. The result confirmed the empirical data for Ca:YIG, which indicate strong anisotropy of the magnetoresistance. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Observation of orientational disorder in the hexagonal stuffed tridymite Sr0.864Eu0.136Al2O4 by the maximum-entropy methodJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 5 2004H. Yamada The crystal structure of a strontium europium aluminate, Sr0.864Eu0.136Al2O4, with a novel hexagonal form was investigated by a combination of Rietveld analysis and the maximum-entropy method (MEM) with synchrotron X-ray powder diffraction data. The electron density image calculated by the MEM/Rietveld method revealed that the apical oxygen ion in the AlO4 tetrahedron has a broad distribution corresponding to an extraordinarily large atomic displacement parameter. This structure could be expressed by a split-atom model, with which the Rietveld refinement gave Rwp = 2.99% and RB = 4.16%. Subsequently, MEM-based pattern fitting (MPF) decreased the R factors to Rwp = 2.81% and RB = 2.34% and the electron density image clearly showed that the apical oxygen ions of the AlO4 tetrahedra are split over three sites around a threefold axis involving an elongated distribution of the residual O ions along the c axis. These results suggest that AlO4 tetrahedra in Sr0.864Eu0.136Al2O4 are orientationally disordered. [source] Design of Ceramic Materials for Chemical Sensors: Effect of SmFeO3 Processing on Surface and Electrical PropertiesJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 2 2001Hiromichi Aono Perovskite-type SmFeO3 powders were prepared by the thermal decomposition of a heteronuclear complex, Sm(Fe(CN)6)·4H2O and by solid-state reaction between the corresponding single oxides, Sm2O3 and Fe2O3. The thermal decomposition behavior of the complex was studied by thermogravimetric analysis. X-ray diffractometry was used to investigate the structure of the products from the complex thermal decomposition and the formation of SmFeO3 from the oxide mixture. Powders prepared by both methods were used to deposit thick films onto alumina substrates with comb-type gold electrodes. The microstructure and chemical homogeneity of the film surfaces were investigated by scanning electron microscopy and Auger electron spectroscopy. Thick SmFeO3 single-phase films having a homogeneous elemental distribution on the surface were obtained when powder prepared by thermal decomposition of the complex was used for deposition, even when the powder was fired at low temperature (800°C). Surface chemical analysis was performed by X-ray photoelectron spectroscopy (XPS). The O 1s XPS line was deconvoluted into two peaks, attributed to adsorbed oxygen (Oad) and oxygen in the lattice (Olattice). Quantitative analysis showed that the surface coverage of iron, expressed as Fe/(Fe + Sm), was larger for the films prepared using the solid-state reacted powder. Although the Olattice/(Fe + Sm) atomic ratio was not influenced by the processing procedures (and, thus, by iron surface coverage), the amount of Oad decreased with increasing iron surface coverage. A model of the SmFeO3 surface was used to determine that the outermost layer of the perovskite-type SmFeO3 prepared from the complex consisted mainly of samarium ions that could each bond four adsorbed oxygen ions. A single oxygen ion could adsorb onto an iron ion, and therefore, the content of adsorbed oxygen was lower for the film prepared from the solid-state reacted powders, which showed larger iron surface coverage. Electrical conductance measurements, performed with increasing temperature in different gaseous environments, confirmed these findings. Higher conductances and lower activation energies were observed for the films with larger samarium surface coverage. [source] Electrical Conductivity of the High-Temperature Proton Conductor BaZr0.9Y0.1O2.95JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2000Hans G. Bohn The impedance of the cubic perovskite BaZr0.9Y0.1O3-, has been systematically investigated in dry and wet atmospheres at high and low oxygen partial pressures. In the grain interior, conductivity contributions from oxygen ions, electron holes, and protons can be identified. Below 300°C, proton conduction dominates and increases linearly with the frozen-in proton concentration. The proton mobility, with an activation energy of 0.44 ± 0.01 eV is among the highest ever reported for a perovskite-type oxide proton conductor. For dry oxygen atmos-pheres, electron hole conduction dominates with an activation energy of ,0.9 eV. At temperatures <500°C, the grain-boundary conductivity can be separated and increases upon incorporation of protons. The high electrical conductivity and chemical stability make acceptor-doped barium zirconate a good choice for application as a high-temperature proton conductor. [source] Microcircuit tailoring in ferromagnetic semiconductor (Ga,Mn)AsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003T. Figielski Abstract In order to search for novel giant-magnetoresistance systems, we fabricated and investigated narrow constrictions in the layers of the ferromagnetic semiconductor (Ga,Mn)As. We found that constrictions a few hundred nanometers wide, tailored by means of the electron-beam lithography and wet etching, were not conducting at liquid helium temperatures unless illuminated, probably due to the trapping action of surface states appearing on an extra surface area denuded by the etching. To avoid this, we used selective implantation of oxygen ions into the ferromagnetic layer to tailor the constrictions. We have shown that such an implantation inactivates Mn acceptors in the layer and destroys ferromagnetism. We propose an application of oxygen ion implantation as a method of fabricating microcircuits in future spin electronics based on Mn-containing III,V semiconductor compounds. [source] | ||||||||||