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Oxide Layer (oxide + layer)
Selected AbstractsOxide layer dissolution in Si/SiOx/Si wafer bonded structuresCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2009N. Zakharov Abstract The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are seperated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si(Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si(Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Evaluation of Thin Film Titanium Nitride Electrodes for Electroanalytical ApplicationsELECTROANALYSIS, Issue 10 2007Carolina Nunes, Kirchner Abstract Titanium nitride is a hard and inert conducting material that has yet not been widely used as electrode material for electroanalytical applications although there are highly developed protocols available to produce well adherent micro and nanostructured electrodes. In this paper the possibilities of using titanium nitride thin films for electroanalytical applications is investigated. Scanning electrochemical microscope (SECM) was used for analysis of the redox kinetics of a selected fast redox couple at thin films of titanium nitride (TiN) in different thicknesses. The investigation was carried out by approaching an amperometric ultramicroelectrode (UME) to the TiN film while the soluble redox couple (ferrocenemethanol/ferrociniummethanol) served as mediator in a SECM configuration. The substrate was biased at a potential so that it rereduces the species being produced at the UME, thus controlling the feedback effect. Normalized current,distance curves were fitted to the theoretical model in order to find the apparent heterogeneous standard rate constant (k°) at the sample. The data are further supported by structural investigation of the TiN films using scanning force microscopy and X-ray photoelectron spectroscopy. It was found that the kinetics are little influenced by prolonged storage in air. The heterogeneous standard rate constants in 2,mM ferrocenemethanol were (0.73±0.05)×10,3,cm s,1 for 20,nm TiN thin layer, (1.5±0.2)×10,3,cm s,1 for 100,nm TiN thin layer and (1.3±0.2)×10,3,cm s,1 for 300,nm TiN thin layer after prolonged storage in air. Oxidative surface treatment (in order to remove organic adsorbates) decreased the kinetics in agreement with a thicker oxide layer on the material. The results suggest that their direct use for amperometric detection of reversible redox systems in particular at miniaturized configurations may be advantageous. [source] An Approach to the Synthesis of Silicon Carbide Nanowires by Simple Thermal Evaporation of Ferrocene onto Silicon WafersEUROPEAN JOURNAL OF INORGANIC CHEMISTRY, Issue 25 2007Jun-Jie Niu Abstract Scales of silicon carbide nanowires (SiC-NWs) with high quality were synthesized by direct thermal evaporation of ferrocene onto silicon wafers at high temperature. Ferrocene decomposed into iron and carbon, which was subsequently treated with silicon to form SiC-NWs at high temperature. The SiC-NWs possess small diameters of , 20 nm and lengths of several ,ms. Furthermore, the samples show a uniform morphology, crystalline structure, and a very thin oxide layer. The main crystal direction of [111] was confirmed by high-resolution field-emission-transmission electron microscopy (HR-FETEM). The Raman scattering spectra showed two peaks at , 796 (TO) and , 980 cm,1 (LO) with varying intensity ratios at different positions. The band line fluctuation was contributed to the Raman selection rules. With reference to the experimental results, we suggested a tentative growth model according to the vapor,liquid,solid (VLS) mechanism. (© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2007) [source] Consolidation of Particles by Severe Plastic Deformation: Mechanism and Applications in Processing Bulk Ultrafine and Nanostructured Alloys and Composites,ADVANCED ENGINEERING MATERIALS, Issue 8 2010Kenong Xia Severe plastic deformation (SPD) can be used to consolidate particles into bulk ultrafine and nanostructured materials. SPD consolidation relies on plastic deformation of individual particles, rather than diffusion, to achieve bonding and thus can be carried out at much lower temperatures. Using examples of consolidation of Al particles by back pressure equal channel angular pressing (BP-ECAP), it is demonstrated that full consolidation is achieved when the particles are sheared to disrupt the surface oxide layer whereas consolidation is impossible or incomplete in the case of particles sliding over each other. The effects of particle characteristics such as size, shape, strength and surface condition, as well as processing parameters including temperature and back pressure, are discussed to shed light on the mechanism of SPD consolidation. Potential applications of SPD in powder consolidation and processing of bulk ultrafine and nanostructured materials are discussed. [source] Microstructural Characteristics of an AZ91 Matrix-Glassy Carbon Particle Composite,ADVANCED ENGINEERING MATERIALS, Issue 7 2010Anita Olszówka-Myalska This paper presents the results of a microstructural investigation of a new type of ultralight glassy carbon particles (Cp)-AZ91 magnesium alloy matrix composite manufactured by the powder metallurgy method. Glassy Cp with unmodified surfaces and surfaces modified with SiO2 amorphous nanocoating were used in the experiment. The composite microstructure, with an emphasis given on the interface, was characterized by scanning electron microscope (SEM), TEM, and HRTEM microscopy. Uniform distribution of the particles in the matrix and their good bonding with the metal matrix were observed. A continuous very thin MgO oxide layer containing needle-like Al2MgO4 phase was detected at the glassy carbon,AZ91 interface. An increase of aluminum concentration at the interface as a result of Mg and Al diffusion into the SiO2 nanolayer was observed in the case of particles modified with SiO2. Crystalline phases containing carbon were not detected at the interface. [source] Analysis of Tin Diffusion in Zircaloy-4 and Tin Redistribution after Steam Oxidation by Means of X-ray Fluorescence Measurements,ADVANCED ENGINEERING MATERIALS, Issue 6 2009Mirco Grosse The temperature dependence of tin diffusion coefficients in the nuclear fuel rod cladding tube material Zircaloy-4 is determined in the range of 1,000,1,400,°C by means of X-ray fluorescence measurements. During oxidation at these temperatures, tin is redistributed, as shown in the figure. Due to tin diffusion in zirconium being much slower than the growing of the oxide layer, tin is segregated inside the oxide layer and at phase boundaries. [source] Beneficial Effects of AlN as Sintering Aid on Microstructure and Mechanical Properties of Hot-pressed ZrB2,ADVANCED ENGINEERING MATERIALS, Issue 7 2003F. Monteverde Higher density of ZrB2 ceramics than with the pure material is achieved when 4.6,% of aluminum nitride are added before hot-pressing as a sintering aid. AlN supports densification and prevents grain coarsening, mainly by virtue of its ability to remove the boron oxide layer that otherwise covers ZrB2 particles. The new material (see Figure for an SEM image of a polished section) has outstanding mechanical properties, e.g. strength values of 600 and 200 MPa at 25 and 1500,°C. [source] Environmental and frequency effects on fatigue crack growth rate and paths in aluminium alloyFATIGUE & FRACTURE OF ENGINEERING MATERIALS AND STRUCTURES, Issue 1-2 2005S. A. MICHEL ABSTRACT The environmental and frequency effects on fatigue crack growth in aluminium alloys are studied theoretically and experimentally. 2024-T351 and 7075-T651 tested in corrosive environments (humid air or technically purified nitrogen) show a constant crack growth rate (da/dN) at low values of the effective stress intensity range (,Keff). Typical well-known fits of this curve (da/dN vs ,Keff) do not reflect the plateau-like region. A new model of crack growth is presented, which physically attributes this region to the formation and subsequent fracture of a crack tip oxide layer. The thickness of this layer is measured with X-ray photon electron spectroscopy. At higher loads, other mechanisms are understood to be active. The model parameters are determined from constant amplitude tests, and are valid for a given material and environment. In 7075-T651 tested in nitrogen, with R= 0.1 and 83 Hz, unexpected macroscopical crack branching is observed when ,Keff reaches approximately 3.0 MPa ,m. [source] Photolithographic Patterning of Ring-Opening Metathesis Catalysts on Silicon,ADVANCED MATERIALS, Issue 1 2005F. Harris Ruthenium-based metathesis catalysts have been successfully covalently bound to a thermal oxide layer on a Si(100) wafer. Selective inactivation of the catalyst is achieved via exposure to UV light using standard photolithographic techniques. Subsequent exposure of the wafer to a suitable monomer results in the formation of a patterned polymeric film that is covalently attached to the oxide layer (see Figure). [source] Small-angle neutron and X-ray scattering of dispersions of oleic-acid-coated magnetic iron particlesJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 6 2004Karen Butter This paper describes the characterization of dispersions of oleic-acid-coated magnetic iron particles by small-angle neutron and X-ray scattering (SANS and SAXS). Both oxidized and non-oxidized dilute samples were studied by SANS at different contrasts. The non-oxidized samples are found to consist of non-interacting superparamagnetic single dipolar particles, with a lognormal distribution of iron cores, surrounded by a surfactant shell, which is partially penetrated by solvent. This model is supported by SAXS measurements on the same dispersion. Small iron particles are expected to oxidize upon exposure to air. SANS was used to study the effect of this oxidation, both on single particles, as well as on interparticle interactions. It is found that on exposure to air, a non-magnetic oxide layer is formed around the iron cores, which causes an increase of particle size. In addition, particles are found to aggregate upon oxidation, presumably because the surfactant density on the particle surfaces is decreased. [source] Small-angle X-ray scattering studies on oxide layer thickness at the porous silicon interfaceJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3-1 2003M. Björkqvist We have determined the thickness of an oxide layer at the p+-type porous silicon interface as a function of oxidation time, by using a small angle X-ray scattering (SAXS). The scattering experiments were carried out using a Kratky camera with a step-scanning device. Oxidation was achieved by storing the porous silicon samples in various temperatures under high relative humidity. The negative deviations from Porod's law were observed from the scattering curves of oxidized samples. The oxide layer thickness was determined from the scattering curve using a sigmoidal-gradient approximation for the diffuse boundary. The oxide layer thickness values as a function of oxidation time, obtained using SAXS are compared to measured weight increase values, caused by the oxidation. [source] Fabrication of near-field optical apertures in aluminium by a highly selective corrosion process in the evanescent fieldJOURNAL OF MICROSCOPY, Issue 3 2003D. Haefliger Summary A simple, one-step process to fabricate high-quality apertures for scanning near-field optical microscope probes based on aluminium-coated silicon nitride cantilevers is presented. A thin evanescent optical field at a glass,water interface was used to heat the aluminium at the tip apex due to light absorption. The heat induced a breakdown of the passivating oxide layer and local corrosion of the metal, which selectively exposed the front-most part of the probe tip from the aluminium. Apertures with a protruding silicon nitride tip up to 72 nm in height were fabricated. The height of the protrusion was controlled by the extent of the evanescent field, whereas the diameter depended on the geometry of the probe substrate. The corrosion process proved to be self-terminating, yielding highly reproducible tip heights. Near-field optical resolution in a transmission mode of 85 nm was demonstrated. [source] The entrapment of corrosion products from CoCr implant alloys in the deposits of calcium phosphate: A comparison of serum, synovial fluid, albumin, EDTA, and waterJOURNAL OF ORTHOPAEDIC RESEARCH, Issue 8 2006A. C. Lewis Abstract Physical wear of orthopedic implants is inevitable. CoCr alloy samples, typically used in joint reconstruction, corrode rapidly after removal of the protective oxide layer. The behavior of CoCr pellets immersed in human serum, foetal bovine serum (FBS), synovial fluid, albumin in phosphate-buffered saline (PBS), EDTA in PBS, and water were studied using X-ray Photoelectron Spectroscopy (XPS) and Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). The difference in the corrosive nature of human serum, water, albumin in PBS and synovial fluid after 5 days of immersion was highlighted by the oxide layer, which was respectively 15, 3.5, 1.5, and 1.5 nm thick. The thickness of an additional calcium phosphate deposit from human serum and synovial fluid was 40 and 2 nm, respectively. Co and Cr ions migrated from the bulk metal surface and were trapped in this deposit by the phosphate anion. This may account for the composition of wear debris from CoCr orthopedic implants, which is known to consist predominantly of hydroxy-phosphate compounds. Known components of synovial fluid including proteoglycans, pyrophosphates, phospholipids, lubricin, and superficial zone protein (SZP), have been identified as possible causes for the lack of significant calcium phosphate deposition in this environment. Circulation of these compounds around the whole implant may inhibit calcium phosphate deposition. © 2006 Orthopaedic Research Society. Published by Wiley Periodicals, Inc. J Orthop Res 24:1587,1596, 2006 [source] Synthesis and Characterization of Magnetic NanocontainersJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2008Christos Tapeinos Magnetic hollow spheres were synthesized through a two-step process and were evaluated by Fourier transform infrared spectroscopy, scanning electron microscopy, super quantum interference device, vibrating sample magnetometry and Mössbauer spectroscopy methods. First, polystyrene spheres (PS) were produced using emulsion polymerization. Second, the PS spheres were coated via the sol,gel method to form an iron oxide layer. The size of the PS spheres was controlled by the concentration of the monomer (styrene), the initiator (potassium persulfate), and the emulsifier (sodium dodecylsulfate). The sol,gel coatings were prepared by controlled hydrolysis of aqueous solutions of FeCl3 in the presence of PS latex, polyvinylpyrrolidone, and hydrochloric acid. The composite was treated in air to burn off the PS latex. Temperature treatments were optimized after extensive differential thermal analysis and thermo gravimetric analysis characterization of the samples. Treatments under hydrogen atmosphere at various temperatures gave control over the formation and extend of magnetic phases in the nanocontainers such as a Fe, hematite (Fe2O3), and magnetite (Fe3O4). The size of the containers ranged between 300 and 400 nm. [source] Joining of Calcium Phosphate Invert Glass-Ceramics on a ,-Type Titanium AlloyJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 6 2003Toshihiro Kasuga A bioactive calcium phosphate invert glass-ceramic containing ,-Ca3(PO4)2 crystals could be joined strongly with a Ti,29Nb,13Ta,4.6Zr alloy consisting of a ,-titanium phase by heating the metal on which the mother glass powders with a composition 60CaO·30P2O5·7Na2O·3TiO2 (mol%) were placed, at 800°C for 1 h in air; the tensile joining strength was estimated to be ,26 MPa on average. A compositionally gradient layer was developed on the metallic substrate during the heating. When the metal with glass powders on it was heated at 850°C in air, the phosphate glassy phase flowed viscously, permeating the oxide layer formed around the surface of the metal, which was thicker than that formed by heating at 800°C; a compositionally gradient layer was not developed, and a strong joining was not realized. The joining between the glass-ceramic and the metal is suggested to be controlled by viscous flow of the glassy phase in the glass-ceramic and by reaction of the glassy phase with the oxide phase formed around the surface layer of the metal. [source] Electrochemical impedance spectroscopy study of surface films formed on copper in aqueous environmentsMATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 9 2005A. Srivastava Abstract The electrochemical behavior of pure copper has been studied in aqueous environments using linear polarization and electrochemical impedance spectroscopy (EIS) techniques as a function of immersion time. The effect of pollutants (like chloride, sulfide and ammonium ions) on the nature of films formed on the copper surface has been studied. All the surfaces revealed the presence of a porous oxide layer. The corrosion resistance decreased with increasing amount of chloride ions. The addition of Na2S in the environments in the absence of any chloride species was beneficial for corrosion resistance. EIS data suggested that the capacitance of the films formed in chloride environments was higher. The surfaces obtained in presence of chloride ions were relatively rough and deeply attacked. The total impedance decreased after 432 h of immersion in solutions possessing chloride ions. The damaging role of chloride ions and the relatively less severe effect of sulfide ions were noted. [source] Investigation on steam oxidation behaviour of TP347H FG Part 1: Exposure at 256 barMATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 7 2005J. Jianmin Abstract The stainless steel TP347H FG is a candidate material for the final stage tubing of superheater and reheater sections of ultra supercritical boilers operated at steam temperatures up to 620°C in the mild corrosion environments of coal-firing. A series of field tests has been conducted with the aforementioned steel in coal-fired boilers and this paper focuses on the steam oxidation behaviour for specimens tested at various metal temperatures for exposure times of 7700, 23000 and 30000 hours as investigated by light optical and scanning electron microscopy. The oxide present on the specimens is a duplex oxide, where the outer layer consists of two sub-layers, an iron oxide layer and an iron-nickel oxide layer; the inner layer is chromium rich chromium-iron-nickel oxide. Microstructure examination showed that for all these samples the varying grain size of subsurface metal affected the oxide thickness, where the larger the metal grain size, the thicker the oxidation scale. This gave the appearance of uneven inner oxides with a varying pit thickness. Comparison of the pit thickness measurement and oxide composition reveals that the oxidation rate is fast during the initial oxidation stage, but the subsequent growth of oxide from further exposure is slower due to the formation of a healing layer consisting of chromium rich oxide near original alloy grain boundaries. At a temperature region above 600°C a thin oxide rich in chromium and manganese is sometimes formed. In addition precipitation of secondary carbides in the bulk metal also occurs at this temperature region. [source] Effect of potential on the corrosion behavior of a new titanium alloy for dental implant applications in fluoride mediaMATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 2 2004A. M. Al-Mayouf Abstract The effect of fluoride ion concentration and pH on the corrosion behavior of TCA (60 Ti 10 Ag 30 Cu), which is a new Ti alloy with low melting point, pure Titanium (Ti), and TAV (TiAl6V4) was examined using open circuit potential (OCP) and electrochemical impedance spectroscopy (EIS) at different potentials. Results show that the corrosion resistance of TCA and Ti decrease at anodic potentials compared with results obtained at OCP. At one potential the corrosion resistance decrease depends on NaF concentration and pH. TAV shows less resistance against corrosion in fluoride containing saliva. TCA has potentials more positive than Ti and TAV due to surface enrichment of Cu and Ag as Ti dissolves which accelerates the cathodic reaction. Fluoride ion may not hinder the growth of oxide layers on the surfaces of the electrodes. It will have influence on the properties of the oxide layer causing them to be not protective against corrosion in acid media containing fluoride ions. [source] Soft X-ray emission spectroscopy of low-dimensional SiO2/Si interfaces after Si+ ion implantation and ion beam mixingPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2010D. A. Zatsepin Abstract An X-ray Si L2,3 -emission spectroscopy study of a SiO2/n-Si heterostructure containing a thin oxide layer of d,=,20,nm thickness implanted by Si+ ions with an energy 12,keV is reported. The maximum concentration of implanted Si+ ions is located close to the SiO2,Si interface at a depth of 18,nm leading to an ion-beam mixed SiO2/Si interface layer in this region, consisting of a non-stoichiometric SiOx matrix. The possible mechanisms of these processes are discussed by atomic collision cascades (knocking-off and knocking-on processes) during ion implantation, associated by partial phase separation into silicon precipitates and SiO2. [source] Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuitsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2008S. Rudra Abstract The objective of this work is to study the optical and electrical properties of tantalum nitride and tantalum barrier thin films used against copper diffusion in Si in integrated circuits using spectroscopic ellipsometry in the VUV and UV,visible range. Single layers of tantalum nitride and bilayer films of Ta/TaN were produced by reactive magnetron sputtering on Si(100) substrates covered with a native oxide layer. Ellipsometric measurements were performed in the energy range from 0.73,8.7 eV and the dielectric functions were simulated using Drude,Lorentz model and effective medium approximation (EMA) in order to obtain information regarding film thickness, film composition, free carrier plasma energy, mean relaxation time and electrical resistivity. The film thickness clearly affects the electrical resistivity and the electron mean free path. It was observed that for films of Ta on TaN even after maintaining the deposition condition suitable for the ,-phase of Ta, it turned out to be a mixture of ,- and ,-phases with higher contribution of the ,-phase. It is shown that even a very small intermixture of two different phases of Ta can be determined accurately using ellipsometry. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Integrated inductors on porous siliconPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2007H. Contopanagos The cover picture illustrates the effective use of a thick porous silicon layer as an integrated micro-plate for RF isolation on a silicon substrate, proposed by Harry Contopanagos and Androula Nassiopoulou in their Original Paper [1] in the current issue. What is plotted is the magnitude of the current distribution (colour coded from blue (low) to high (red) values) on the metallization and on a screen 50 µm underneath the bottom oxide layer of a 2-metal integrated CMOS-compatible inductor on bulk silicon (lower right) and on a 50 µm thick porous silicon layer (upper left) for a frequency of 2.5 GHz. Inductors were designed in a standard 0.13 µm CMOS technology. Efficient RF isolation is produced by the porous Si layer, as evidenced by the virtual elimination of surface currents relative to the case of standard CMOS, indicating virtually complete substrate shielding by a 50 µm thick porous Si layer for the relevant size scale. The quality factor of the inductor with the use of the porous Si layer is increased by 100%, reaching a maximum value of 33 for the design shown. The first author of the article is a visiting senior researcher at the Institute of Microelectronics (IMEL), National Center for Scientific Research "Demokritos" (Athens, Greece). His research focuses on electromagnetics and microwave engineering, artificial materials and photonic crystals, wireless front ends, antennas and high-frequency analog integrated circuits. [source] Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006Mutsumi Sugiyama Abstract Sputtering deposition of Ga-doped ZnO (ZnO:Ga) thin films was carried out using the helicon-wave-excited plasma sputtering (HWPS) method. The films sputtered above 150 °C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250 °C, the electron mobility was limited to as low as 2,3 cm2/V s due to the small grain size (,25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] A theoretical study of an amorphous aluminium oxide layer used as a tunnel barrier in a magnetic tunnel junctionPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 12 2007E. S. Noh Abstract An amorphous aluminium oxide layer is assumed to be a condensed gas phase composed of (AlOx)N molecules. The total energy and the electron affinity of (AlOx)N molecules is calculated by using a DFT program. The effective tunnel barrier height in the MTJ is presumed from a difference between the work function of the ferromagnetic metal and the electron affinity of (AlOx)N molecules. By using a quantum-mechanical free electron model the TMR and the R×A product are calculated as a function of the thickness of an amorphous aluminium oxide layer in the F/I/F tunnel junction. It is inferred that the tunnel barrier width determined by subtracting 6 Å from the thickness of an amorphous aluminium oxide layer is more suitable to explain an experimental report qualitatively than the tunnel barrier width equivalent to the thickness of an amorphous aluminium oxide layer. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performancePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010H. D. Lee Abstract We have studied the effect of the trimethylaluminum (TMA) precursor on the reduction of surface "native" oxides from GaAs substrates using medium energy ion scattering spectroscopy (MEIS), X-ray photoelectron spectroscopy (XPS) and electrical measurements. Our data show that after one single TMA pulse a substantial part of the native oxide is reduced and an oxygen-rich aluminum oxide layer is formed. Al2O3 films grown with the normal atomic layer deposition cycles of TMA and water show that the growth rate of the Al oxide during this initial reduction of the native oxides is faster than the rate once this reduction is completed. Furthermore, the results of C-V measurements of Al2O3/GaAs grown under the same conditions along with post deposition annealing indicate a good quality interface. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] First InGaN/GaN thin film LED using SiCOI engineered substratePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2006J. Dorsaz Abstract InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart CutÔ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results demonstrate the potential of SiCOI engineered substrates as an alternative to laser lift off for thin film LED fabrication. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Interaction of Plasma Deposited HMDSO-Based Coatings with Fibrinogen and Human Blood Plasma: The Correlation between Bulk Plasma, Surface Characteristics and Biomolecule InteractionPLASMA PROCESSES AND POLYMERS, Issue 5 2010Ram P. Gandhiraman Abstract The success of a biomaterial depends on the nature of interaction and the progressive reaction between the biological components and the surface of the biomaterial. In order to control the interaction between the biomaterial and biological component, it is necessary to understand the factors that influence the protein adsorption and cell proliferation. Surface chemistry plays a crucial role in the success of any blood contacting biomaterial. Plasma enhanced chemical vapour deposition (PECVD) is an interesting commonly used technique for tailoring surface characteristics while retaining bulk material properties. Two different films, namely polymer-like and silica-like coatings, with varying surface characteristics have been deposited from hexamethyldisiloxane, by PECVD, on 316L stainless steel. A correlation between the bulk plasma, interfacial adhesion of the coating to 316L steel, surface characteristics and biomolecule interaction is presented in this work. The interfacial adhesion strength analysis demonstrated that silica-like coatings have higher adhesion strength to 316L stainless steel than polymer-like coatings, caused due to the formation of a strong FeOSi and CrOSi bonds. It was observed that the effect of nanoscale surface roughness (close to 6,nm) was less significant, and that the surface chemistry played a significant role in governing the fibrinogen adsorption. Highest fibrinogen adsorption on plain steel was due to the electrostatic interaction of the metal oxide layer with the protein. Hydrophobicity of the polymer-like film resulted in a higher fibrinogen binding than the silica-like films. [source] Deposition of SnO2:F Thin Films on Polycarbonate Substrates by PECVD for Antifouling PropertiesPLASMA PROCESSES AND POLYMERS, Issue S1 2007Marie Jubault Abstract SnO2:F thin films were deposited on polycarbonate and glass substrates by RF capacitively coupled plasma enhanced chemical vapor deposition (PECVD) using a mixture of tetramethyltin (TMT) [Sn(CH3)4], argon, oxygen as precursors. The effects of the substrate temperature, deposition time and doping on the resistivity and the morphology of the films have been studied. The as-deposited films appear to have higher carrier mobilities than amorphous ones, in the range of 5 and 7.5 cm2,·,V,1,·,s,1, which could be explained by the presence of nanocrystallites. In order to understand the nanostructure of the films, we studied the formation of nanoparticles and dust particles in the discharge. Finally, we have shown that the incorporation of less than 3% of F in the tin oxide layer could decrease the resistivity down to 3,·,10,3 ,,·,cm. [source] Corrosion effects in thin-film photovoltaic modulesPROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 6 2003D. E. Carlson Abstract Electrochemical corrosion effects can occur in thin-film photovoltaic (PV) modules that are fabricated on tin-oxide-coated glass when operating at high voltages and at elevated temperatures in a humid climate. The current study shows that this corrosion is associated with a delamination of the tin oxide layer from the glass, which is caused by sodium accumulation near the interface between the tin oxide and the glass and by the ingression of moisture into the PV module from the edges. This corrosion in thin-film PV modules can be significantly reduced by altering the growth conditions of the tin oxide or by using zinc oxide as a transparent conductive oxide electrode. Copyright © 2003 John Wiley & Sons, Ltd. [source] Gold-coated fused-silica sheathless electrospray emitters based on vapor-deposited titanium adhesion layersRAPID COMMUNICATIONS IN MASS SPECTROMETRY, Issue 14 2003Stefan Nilsson Gold-coated fused-silica electrospray (ES) emitters based on vapor-deposited adhesion layers of titanium have been manufactured to investigate the possibilities of producing durable ES emitters applicable in chip-based analytical devices. The stabilities of the emitters were studied by both electrospray and electrochemical experiments and a marked increase in the emitter lifetime, compared to that for Cr/Au coated emitters, was found for the Ti/Au emitters in the ES durability tests. This indicates that Ti (rather than Cr) adhesion layers should be used in association with large-scale fabrication of ES emitters by vapor-deposition techniques. The lifetime of about 500,700 hours also allowed the Ti/Au-coated emitter to be used as an integrated part of a capillary liquid chromatography column coupled to a mass spectrometer in a series of LC/MS experiments. The Ti/Au coating was further studied by electrochemical techniques and scanning electron microscopy in conjunction with X-ray spectroscopy. It is shown that the eventual failure of the Ti/Au emitters in ES experiments was due to an almost complete detachment of the gold layer. Experimental evidence suggests that the detachment of the gold coating was due to a reduced adhesion to the titanium layer during oxidation in positive electrospray. Most likely, this was caused by the formation of an oxide layer on the titanium film. It is thus shown that unlimited emitter stabilities are not automatically obtained even if the metallic adhesion layer is stabilized by an oxide formation under positive electrospray conditions. Copyright © 2003 John Wiley & Sons, Ltd. [source] Oxide layer dissolution in Si/SiOx/Si wafer bonded structuresCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2009N. Zakharov Abstract The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are seperated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si(Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si(Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | |||||||||||||||||||||||||||||||