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Noise Figure (noise + figure)
Selected AbstractsAdjoint network method applied to the performance sensitivities of microwave amplifiersINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 5 2006F. Güne Abstract This work focuses on the performance sensitivities of microwave amplifiers using the "adjoint network and adjoint variable" method, via "wave" approaches, which includes sensitivities of the transducer power gain, noise figure, and magnitudes and phases of the input and output reflection coefficients. The method can be extended to sensitivities of the other performance measure functions. The adjoint-variable methods for design-sensitivity analysis offer computational speed and accuracy. They can be used for efficiency-based gradient optimization, in tolerance and yield analyses. In this work, an arbitrarily configured microwave amplifier is considered: firstly, each element in the network is modeled by the scattering matrix formulation, then the topology of the network is taken into account using the connection scattering-matrix formulation. The wave approach is utilized in the evaluation of all the performance-measurement functions, then sensitivity invariants are formulated using Tellegen's theorem. Performance sensitivities of the T- and ,-types of distributed-parameter amplifiers are considered as a worked example. The numerical results of T- and ,-type amplifiers for the design targets of noise figure Freq = 0.46 dB , 1,12 and Vireq = 1, GTreq = 12 dB , 15.86 in the frequency range 2,11 GHz are given in comparison to each other. Furthermore, analytical methods of the "gain factorisation" and "chain sensitivity parameter" are applied to the gain and noise sensitivities as well. In addition, "numerical perturbation" is applied to calculation of all the sensitivities. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006. [source] Noise in lossless microwave multiportsINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 2 2004Q. García-García Abstract This article addresses the noise behaviour (noise temperature and noise figure) of some passive microwave multiport circuits. The analysis method is based on the noise-wave formulation. With the exception of the attenuator case, which is used as a reference, the circuit elements considered are lossless devices, in the sense that neither conductive nor dielectric losses are accounted for. The analysis shows that, when connected to matched loads in some of their ports, these multiports circuits lose their lossless nature and their scattering matrix is not unitary; therefore, they generate thermal noise. The article addresses and formalizes mathematically the noise properties of a number of lossless microwave devices such as N -port power splitters, circulators, and hybrid couplers. While the noise-wave mathematical formulation may be cumbersome in some cases, all the devices and configurations analyzed in this work have been characterized in terms of noise figure and noise temperature, which is a much more practical approach in most situations. Some implications of the use of these devices and configurations in antenna arrays for antenna noise temperature evaluations have been also addressed. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 99,110, 2004. [source] An overview on S-band erbium-doped fiber amplifiersLASER PHYSICS LETTERS, Issue 1 2007S. W. Harun Abstract An erbium-doped fiber amplifier (EDFA) for S-band signal amplification is designed by using a depressed cladding erbium-doped fiber (DC-EDF). The fiber's characteristics are described in terms of the effects of the fiber spooling diameter on the amplifier's performance. In this experiment, the spooling diameter required for optimum amplifier gain was around 5,7 cm. By using a typical two-stage configuration (with a 27 m long DC-EDF and a 260 mW pump laser power), the maximum small signal gain obtained was about 32 dB. Yet, by employing a double pass amplifier configuration with a shorter DC-EDF length and a lower pump laser power (15 m and 135 mW, respectively), a similar maximum small signal gain of approximately 30 dB was achieved. This improvement in gain characteristics however, incurred an increased noise figure penalty of about 1 dB in comparison to single-pass amplifier configurations. In order to reduce the amplifier's noise figure while maintaining its high gain, a partial double-pass S-band EDFA configuration was introduced. This configuration provides a high 26.9 dB gain and an improved noise figure comparable to a single pass configuration. Gain clamping in S-band EDFAs are also demonstrated by utilizing a fiber Bragg grating to form an oscillating laser at around 1530 nm. This technique enables good gain clamping with a gain variation of less than 1 dB. (© 2007 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source] Ultimate spectral efficiency of information transmission as the figure of merit of host materials of EDFALASER PHYSICS LETTERS, Issue 11 2005M. A. Khodasevich Abstract The exact "quantum limit" value of noise figure of EDFA in the high gain regime at quasi-two-level pumping is determined on the base of the McCumber theory. It is shown that in the unsaturated gain regime the ultimate spectral efficiency of information transmission depends on host material of EDFA and can serve as a figure of merit for comparison of host fibers. (© 2005 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source] A 2.4 GHz CMOS diversity receiver having a soft-start regulator for wake-upMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2010Yong-iL Kwon Abstract An improved diversity receiver having a new regulator for stable power supply in a 0.18 ,m CMOS technology is presented. The regulator with soft-start is implemented to eliminate the battery damages at initial power-up. To reduce the external components, two switches for antenna diversity are integrated in front of LNA on the chip. A stacked inductor technique is adopted to reduce the chip area. The simulation and measurement results show that the soft-start time of the regulator can be controlled by a variable resistor from 200 ,S to 6.2 mS. The front-end (LNA and mixer) can achieve a voltage gain of 33.5 dB, a noise figure (NF) of 3.8 dB, and 23 dB of the isolation between antennas when consuming 3.9 mW with a 1.8 V power supply. The NF includes the loss of a BALUN, BPF, and switches. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 611,615, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25000 [source] A 5.79-dB NF, 30-GHz-band monolithic LNA with 10 mW power consumption in standard 0.18-,m CMOS technologyMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2009Chi-Chen Chen Abstract A 30-GHz (Ka-band) low-noise amplifier (LNA) with 10 mW power consumption (PDC) using standard 0.18-,m CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascade common-source stages, and a series peaking inductor (Lg3) was added to the input terminal of the third stage to boost the peak gain (S21-max) from 11.7 (at 28.8 GHz) to 14.5 (at 28 GHz), i.e., 23.9% (simulation). Shunt RC feedback was adopted in the third stage for achieving good output impedance matching. At 30 GHz, this LNA achieved excellent input return loss (S11) of ,19.5 dB, output return loss (S22) of ,23.8 dB, forward gain (S21) of 11.1 dB, reverse isolation (S12) of ,49.2 dB, and noise figure of 5.79 dB. The corresponding gain/PDC was 1.11, which is better than those of the CMOS LNAs around 30 GHz reported in the literature. The measured input-referred 1-dB compression point (P1dB-in) and input third-order intermodulation point (IIP3) were ,10.9 and ,2 dBm, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 933,937, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24250 [source] A 2.4/5.7-GHz dual-band low-power CMOS RF receiver with embedded band-select switchesMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2009D.-R. Huang Abstract This article presents a 2.4-/5.7-GHz dual-band low-power direct-conversion CMOS RF receiver for the 802.11a/b/g WLAN applications. The RF receiver includes a low noise amplifier (LNA) with dual input stages and dual switches for each of 2.4/5.7-GHz applications. This design can substitute the use of two LNAs in conventional structure and eliminate the use of the costly external band-select switches. It also alleviates the difficulty of single matching for multiple frequency bands. The RF receiver also includes a Gilbert-cell-based broadband mixer which is designed to be both low power consumption and relatively high conversion gain. Fabricated in 0.18-,m CMOS technology, the RF receiver exhibits a conversion gain of 25.8/20.6 dB, DSB noise figure of 4.4/5.6 dB, and input IP3 of ,18/,12.5 dBm at 2.4/5.7 GHz frequency band, respectively. The measured EVM for IEEE 802.11a/b/g is 1.2/1.6/1.1% at data rate of 11/54/54 Mbps. The power consumption under 1.8 V supply is 10.6 mW for the 2.4 GHz mode, and 17.2 mW for the 5.7 mode. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 593,597, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24120 [source] A low power low noise amplifier with subthreshold operation in 130 nm CMOS technologyMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2008Ickhyun Song Abstract In this article, a 5.8 GHz ISM-band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS technology and measured signal gain, noise figure, and power consumption are 13.4 dB, 5.2 dB, and 980 ,W, respectively, at target frequency. Also the LNA achieves the highest figure of merit among the recently published subthreshold LNAs. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2762,2764, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23788 [source] Small size low noise amplifier with suppressed noise from gate resistanceMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 9 2008Ickhyun Song Abstract In this article, design and characterization results of a fully integrated 5.8 GHz low noise amplifier (LNA) using 0.13-,m CMOS technology are presented. Commonly adopted inductive source degeneration for input impedance matching is eliminated to achieve smaller chip area while providing reasonable 50-, matching. Also by adding a capacitor between the gate and the source of the input transistor, a noise source from the gate resistance is partly suppressed. The layout of the designed LNA occupies total area of 0.68 mm2 and the results show forward power gain (S21) of 12.7 dB and noise figure of 3.9 dB while consuming 6.85 mW from 1.2-V DC supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2300,2304, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23702 [source] A dual-band receiver front-end using current-mode passive mixer with digitally-controlled oscillator in 90- NM CMOSMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 8 2008Jinghong Chen Abstract This work presents a receiver front-end that targets mobile video applications, and integrates a dual-band LNA, a current-mode passive mixer, a reference Gilbert mixer, and a digitally-controlled oscillator providing the quadrature LO signal for the mixers. The conversion gain and thermal noise performances of the current-mode passive mixer are studied. Design tradeoffs among noise, linearity, and conversion gain are performed. Measured performance of the receiver front-end shows a flicker noise corner of 70 kHz, a noise figure (NF) of 4.4 dB, an input third-order intermodulation product (IIP3) of ,2 dBm, and DCO phase noise of ,128 dBc/Hz at 1-MHz offset. The receiver consumes less than 24 mA of current in a 1.2-V 90-nm standard digital CMOS process. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2138,2142, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23587 [source] A low-power V-band CMOS low-noise amplifier using current-sharing techniqueMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 7 2008Hong-Yu Yang Abstract A low-power-consumption 53-GHz (V-band) low-noise amplifier (LNA) using standard 0.13 ,m CMOS technology is reported. To achieve sufficient gain, this LNA is composed of four cascaded common-source stages. Current-sharing technique is adopted in the third and four stages to reduce the power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain at the design frequency. This LNA achieved voltage gain (AV) of 14 dB, very low noise figure (NF) of 6.13 dB, input referred 1-dB compression point (P1dB-in) of ,20 dBm, and input third-order inter-modulation point (IIP3) of ,9 dBm at 53 GHz. It consumed only a very small dc power of 10.56 mW. In addition, the chip area was only 0.91 × 0.58 mm2, including all the test pads and bypass capacitors. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1876,1879, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23523 [source] Low cost ultra wideband amplifier in 0.35 ,m CMOS processMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 7 2008Kuldip N. Modha Abstract A two stage ultra wideband (UWB) amplifier is presented. This amplifier incorporates multiple bandwidth enhancing techniques and is implemented in Austria micro systems (AMS) 0.35 ,m CMOS process technology. The amplifier consumes 39.5 mW of power, exhibits a maximum gain of 13 dB, has input and output reflections below ,9 and ,10 dB, respectively over a ,3 dB bandwidth of 4 GHz. The average measured noise figure is 6 dB and 1 dB compression point at 3 GHz is ,12 dBm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1879,1881, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23525 [source] A modified high linearity CMOS micromixer for UWB systemsMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 6 2008Shui-Yang Lin Abstract A CMOS Micromixer for 3,5 GHz UWB receivers is presented in this article. Modified class-AB input stage is developed to improve the LO/RF, LO/IF isolation and to reduce the mixer's noise figure. A LO buffer and an output buffer are integrated in it for on-wafer testing. Our measurement results show that, with a 50-, output loaded, it can achieve 5-dB power conversion gain, 12.5 dB SSB NF, and 4 dBm IIP3. The mixer-core consumes 2.6 mA of current from 1.8-V power supply, and the on-chip area occupied by this mixer with pads excluded is only about 350 × 400 ,m2. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1463,1466, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23395 [source] A high-performance wideband cmos low-noise amplifier using inductive series and parallel peaking techniquesMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 5 2008Jen-How Lee Abstract A 1,11 GHz wideband low-noise amplifier (LNA) with good phase linearity properties (group-delay variation is only ±35.56 ps across the 3.1,10.6 GHz band of interest) using standard 0.18 ,m CMOS technology is reported. To enhance the bandwidth for achieving both high and flat gain and small group-delay variation, the inductive shunt-peaking technique is adopted in the load of the input stage, while the inductive series-peaking technique is adopted in the input terminal of the output stage. The wideband LNA dissipates 29.46 mW power and achieves input return loss (S11) of ,9.32 to ,9.98 dB, flat forward gain (S21) of 11 ± 1 dB, reverse isolation (S12) of ,46 to ,60 dB, and noise figure of 4.15,4.85 dB over the 3.1,10.6 GHz band of interest. Good 1-dB compression point (P1 dB) of ,14 dBm and input third-order inter-modulation point (IIP3) of ,3 dBm are achieved at 6.4 GHz. The chip area is only 675 ,m × 632 ,m excluding the test pads. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1240,1244, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23338 [source] An analysis of substrate effects on transmission-lines for millimeter-wave CMOS RFIC applicationsMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 2 2008Jin-Fa Chang Abstract A set of transmission lines (TLs) for millimeter-wave (MMW) CMOS RFIC applications was implemented in a standard 0.18 ,m CMOS technology and then postprocessed by CMOS-compatible inductively-coupled plasma (ICP) etching, which removed the silicon underneath the TLs completely. TL parameters such as characteristic impedance ZC, attenuation constant ,, phase constant ,, effective permittivity ,eff, minimum noise figure (NFmin), parallel capacitance/conductance C/G, and series inductance/resistance L/R, as a function of frequency were extracted. It was found that ,, ,eff, NFmin, C, and G were greatly improved after silicon removal. The state-of-the-art performances of the on-chip TLs-on-air suggest that they are very suitable for application to realize ultralow-noise MMW CMOS RFICs. Besides, the CMOS-compatible backside ICP etching technique is very promising for MMW system-on-a-chip applications. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 319,324, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23055 [source] Ultra-wideband COMOS low noise amplifier with simultaneous gain and noise matchesMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 1 2008Hsien-Yuan Liao Abstract Ultrawideband CMOS low noise amplifier (LNA) using lossy LC ladder is proposed. A lossy LC ladder matching network is combined with conventional inductive degeneration and provides both gain and noise match over multioctave bandwidth. The bandwidth is further enhanced by shunt peaking technique. The explicit formulas are derived in this work to determine the values of resistor and LC ladder elements to meet the gain and noise match conditions. The LNA achieves 10.8-dB gain with a 3-dB bandwidth from 1.6 to 13.2 GHz and a minimum noise figure of 3.4 dB under the power consumption of 22 mW. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 158,160, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22996 [source] GaInp/GaAs HBT broadband inductorless receiverMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 1 2008Tzung-Han Wu Abstract A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 247,250, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23048 [source] Active integrated antenna for mobile TV signal receptionMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 12 2007Ick-Jae Yoon Abstract This paper proposes a small-sized field-effect transistor (FET) based active integrated antenna (AIA) for terrestrial digital multimedia broadcasting (T-DMB) signal reception, which is one of the mobile TV services allocated to 200 MHz band. The commercially used T-DMB antenna is a 120 mm long monopole, but the size of the proposed one is reduced to 50 mm by the method of active device integration. The active device integrated to the radiator influences not only on the current distribution at the radiator but also the input impedance, results in an antenna size reduction with an enhanced gain. In addition to this, a band-pass filter is designed at the input port of the radiator. This plays a role as a matching circuit between a radiator and an active device as well as provides a band-selection function simultaneously to be free of other high intensity signals existing around the T-DMB band. The antenna effective length related to the same-sized monopole and noise figure are measured to verify the validity of the proposed antenna. The performance of the proposed FET based AIA shows the feasibility of designing absolutely small-sized antenna with active devices integrated compared to an operating frequency band. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2998,3001, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22968 [source] Wideband and low noise CMOS amplifier for UWB receiversMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2007Jihak Jung Abstract An ultra-wideband (UWB) low noise amplifier (LNA) that consists of two common-source and shunt-feedback stages is presented. Measurement results show the maximum gain (S21) of 13.5 dB with the 3-dB band from 1.85 to 10.2 GHz and return losses (S11, S22) of less than ,10 dB from 3 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 1.85 to 10.2 GHz. To our knowledge, these are the best measured data up to date for the CMOS LNA. The input-referred third-order intercept point (IIP3) and the input-referred 1-dB compression point (P1dB) are obtained as ,1 dBm and ,9 dBm, respectively, while consuming 13 mW in 0.18 ,m RF CMOS process. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 749,752, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22282 [source] Electric stress effect on DC-RF performance degradation of 0.18-,m MOSFETSMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 10 2006C. C. Chen Abstract We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-,m RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (Id,sat) of 500 ,A/,m, high unity-gain cut-off frequency (ft) of 47 GHz, and low minimum noise figure (NFmin) of 1.3 dB at 10 GHz. The hot carrier stress for 20% Id,sat reduction causes DC gm and ro degradation as well as the lower RF current gain by 2.35 dB, ft reduction to 35.7 GHz, increasing NFmin to 1.7 dB at 10 GHz and poor output impedance matching. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1916,1919, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21813 [source] An analysis of layout and temperature effects on magnetic-coupling factor, resistive-coupling factor, and power gain performances of RF transformers for RFIC applicationsMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 8 2006Yo-Sheng Lin Abstract In this paper, we demonstrate a comprehensive analysis of the temperature effect (from ,25°C to 175°C) on the quality-factors (Q1 and Q2), magnetic-coupling factor (KIm), resistive-coupling factor (KRe), maximum available power gain (GA max), and minimum noise figure (NFmin) performances of RF bifilar and stacked transformers for RFIC applications. Excellent GA max of 0.713 and 0.806 (that is, NFmin of 1.469 and 0.937 dB) were achieved at 5 and 7 GHz, respectively, at room temperature, for a 1:1 stacked transformer mainly due to its high KIm and KRe. In addition, for the 1:1 bifilar transformer at room temperature, though its KIm and KRe are low, good GA max of 0.636 and 0.631 (that is, NFmin of 1.965 and 2.0 dB) were still achieved at 5 and 7 GHz, respectively, mainly due to its high Q1 and Q2. The present analysis is helpful for RF engineers to design temperature-insensitive ultra-low-voltage high-performance transformer-feedback low-noise-amplifiers (LNAs) and voltage-controlled-oscillators (VCOs), and other radio-frequency integrated circuits (RF-ICs) which include transformers. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1460,1466, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21732 [source] A 38-dBm power amplifier using AlGaAs/lnGaAs/GaAs PHEMT for S-band applicationsMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2005Hong-Zhi Liu Abstract A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinson power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3rd -order intercept point is also measured. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 311,313, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20620 [source] Analytical noise model of a high-electron-mobility transistor for microwave-frequency applicationMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 5 2004Vandana Guru Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small-signal parameters and the drain and gate-noise sources are calculated to determine the noise coefficients and correlation coefficients. Finally, the minimum noise figure is evaluated by incorporating the extrinsic noise sources and compared with the experimental data, which is in excellent agreement. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 410,417, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11396 [source] AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifierPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005R. Schwindt Abstract A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of ,7.5 dB, and output return loss of ,15 dB at 8.5 GHz. The dc characteristics of individual 0.25-,m × 150-,m transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of ,6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receiversINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 5 2006Y. P. Zhang Abstract This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-,m 6M1P CMOS technology from the system viewpoint for the first time to provide a higher gain at the high band in order to compensate the high-band signal's extra loss over the air transmission. The LNA drains 6.21 mA of current from a 1.5-V supply voltage and achieves voltage gains of 14 and 22 dB, input S11 of 15 and 18 dB, and noise figures of 2.45 and 2.51 dB at 2.4 and 5.2 GHz, respectively. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006. [source] Single-stage gain-clamped L-band EDFA with C-band ASE self-oscillation in ring cavityLASER PHYSICS LETTERS, Issue 2 2008M.A. Mahdi Abstract We demonstrate single-stage gain-clamped L-band Er3+ -doped fiber amplifier (EDFA) utilizing self-oscillation modes as the control light. The amplifier structure exploits the characteristics of C/L-band coupler to isolate between lasing modes and L-band signal. The self-lasing cavity modes are obtained without any tunable bandpass filter in the loop and generated from the amplified spontaneous emission in the C-band region. The amplifier configuration has lower noise figures as opposed to a dual-stage partially gain-clamped amplifier. The gain and noise figure fluctuations are less than ±0.4 dB in the gainclamping region. The transient analysis confirms that the maximum power excursion is less than 0.3 dB for 10-dB add/drop. (© 2007 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source] A novel tunable dual-band low noise amplifier for 868/915 MHz and 2.4 GHz Zigbee application by CMOS technologyMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2010Kai Xuan Abstract A dual-band (868/915 MHz and 2.4 GHz) low noise amplifier for Zigbee applications is designed using 0.35-,m CMOS technology. At 868/915 MHz and 2.4 GHz, the gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output reflections are below ,10 dB in both bands. The amplifier works at 2.5 V supply voltage with 12 mA current dissipation. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 507,510, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24964 [source] A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technologyMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 1 2004Shey-Shi Lu Abstract A monolithic concurrent dual-band low-noise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57-GHz (GPS) and 5.25-GHz (ISM) bands. It consumes only 15-mW power and achieves transducer gains (S21) of 25.3 and 14.3 dB, input return losses (S11) of 6.8 and 11.5 dB, reverse isolation (S12) of ,30.8 and ,32.2 dB, and noise figures of 2.55 and 4.5 dB at these two bands, respectively. The performance at 5.25 GHz is comparable with the 2.45/5.25-GHz concurrent dual-band CMOS LNA with a bonding wire as the gate inductor using 0.35-m CMOS technology 1. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 58,60, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20206 [source] | |||||||||||||