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Noise Amplifier (noise + amplifier)

Distribution by Scientific Domains
Engineering81%

Kinds of Noise Amplifier

  • low noise amplifier
    		•

    Selected Abstracts

    Advanced mHEMT MMICs for 220 GHz high-resolution imaging systems

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2009
    Sébastien Chartier
    Abstract The development of advanced millimeter-wave monolithic integrated circuits for application in active and passive high-resolution imaging systems operating beyond 200 GHz is presented. A wideband 210 GHz Low Noise Amplifier has been successfully realized using one of our three metamorphic high electron mobility transistor (mHEMT) technologies in combination with grounded coplanar circuit topology (GCPW). Additionally, a 200 GHz voltage controlled oscillator (VCO) MMIC demonstrating good output power over a wide bandwidth was fabricated, using our 100 nm mHEMT technology. Finally, a high resolution 220 GHz radiometer was realized and shows very promising performance. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Sensitivity improvement of the receiver module in the passive tag-based RFID reader

    INTERNATIONAL JOURNAL OF COMMUNICATION SYSTEMS, Issue 11 2009
    Jonghun Chun
    Abstract In this paper, we have designed an RFID reader receiver system for improving the performance of the passive Tag-based 908.5,914,MHz RFID reader, and analyzed the system performance vis-à-vis frequency, reader, and tag properties. The commercial receiver system causes a loss in sensitivity because of its 24 capacitors and six inductors. To improve the overall sensitivity of the receiver, we have designed a system using a circulator, low noise amplifier (LNA) and a SAW filter. The experimental results show that the use of a circulator to separate the Tx/Rx paths eliminates interference, the LNA improves the sensitivity of the Rx module and SAW filter eliminates the noise and spurious components in the received signal. Copyright © 2009 John Wiley & Sons, Ltd. [source]

    Accurate substrate modelling of RF CMOS

    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 3 2006
    M. S. Alam
    Abstract The losses within the substrate of an RF IC can have significant effect on performance in a mixed signal application. In order to model substrate coupling accurately, it is represented by an RC network to account for both resistive and dielectric losses at high frequency (> 1 GHz). A small-signal equivalent circuit model of an RF IC inclusive of substrate parasitic effect is analysed in terms of its y -parameters and an extraction procedure for substrate parameters has been developed. By coupling the extracted substrate parameters along with extrinsic resistances associated with gate, source and drain, a standard BSIM3 model has been extended for RF applications. The new model exhibits a significant improvement in prediction of output reflection coefficient S22 in the frequency range from 1 to 10 GHz in device mode of operation and for a low noise amplifier (LNA) at 2.4 GHz. Copyright © 2006 John Wiley & Sons, Ltd. [source]

    A novel tunable dual-band low noise amplifier for 868/915 MHz and 2.4 GHz Zigbee application by CMOS technology

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2010
    Kai Xuan
    Abstract A dual-band (868/915 MHz and 2.4 GHz) low noise amplifier for Zigbee applications is designed using 0.35-,m CMOS technology. At 868/915 MHz and 2.4 GHz, the gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output reflections are below ,10 dB in both bands. The amplifier works at 2.5 V supply voltage with 12 mA current dissipation. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 507,510, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24964 [source]

    A 2.4/5.7-GHz dual-band low-power CMOS RF receiver with embedded band-select switches

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2009
    D.-R. Huang
    Abstract This article presents a 2.4-/5.7-GHz dual-band low-power direct-conversion CMOS RF receiver for the 802.11a/b/g WLAN applications. The RF receiver includes a low noise amplifier (LNA) with dual input stages and dual switches for each of 2.4/5.7-GHz applications. This design can substitute the use of two LNAs in conventional structure and eliminate the use of the costly external band-select switches. It also alleviates the difficulty of single matching for multiple frequency bands. The RF receiver also includes a Gilbert-cell-based broadband mixer which is designed to be both low power consumption and relatively high conversion gain. Fabricated in 0.18-,m CMOS technology, the RF receiver exhibits a conversion gain of 25.8/20.6 dB, DSB noise figure of 4.4/5.6 dB, and input IP3 of ,18/,12.5 dBm at 2.4/5.7 GHz frequency band, respectively. The measured EVM for IEEE 802.11a/b/g is 1.2/1.6/1.1% at data rate of 11/54/54 Mbps. The power consumption under 1.8 V supply is 10.6 mW for the 2.4 GHz mode, and 17.2 mW for the 5.7 mode. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 593,597, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24120 [source]

    A low power low noise amplifier with subthreshold operation in 130 nm CMOS technology

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2008
    Ickhyun Song
    Abstract In this article, a 5.8 GHz ISM-band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS technology and measured signal gain, noise figure, and power consumption are 13.4 dB, 5.2 dB, and 980 ,W, respectively, at target frequency. Also the LNA achieves the highest figure of merit among the recently published subthreshold LNAs. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2762,2764, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23788 [source]

    Small size low noise amplifier with suppressed noise from gate resistance

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 9 2008
    Ickhyun Song
    Abstract In this article, design and characterization results of a fully integrated 5.8 GHz low noise amplifier (LNA) using 0.13-,m CMOS technology are presented. Commonly adopted inductive source degeneration for input impedance matching is eliminated to achieve smaller chip area while providing reasonable 50-, matching. Also by adding a capacitor between the gate and the source of the input transistor, a noise source from the gate resistance is partly suppressed. The layout of the designed LNA occupies total area of 0.68 mm2 and the results show forward power gain (S21) of 12.7 dB and noise figure of 3.9 dB while consuming 6.85 mW from 1.2-V DC supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2300,2304, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23702 [source]

    Ultra-wideband COMOS low noise amplifier with simultaneous gain and noise matches

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 1 2008
    Hsien-Yuan Liao
    Abstract Ultrawideband CMOS low noise amplifier (LNA) using lossy LC ladder is proposed. A lossy LC ladder matching network is combined with conventional inductive degeneration and provides both gain and noise match over multioctave bandwidth. The bandwidth is further enhanced by shunt peaking technique. The explicit formulas are derived in this work to determine the values of resistor and LC ladder elements to meet the gain and noise match conditions. The LNA achieves 10.8-dB gain with a 3-dB bandwidth from 1.6 to 13.2 GHz and a minimum noise figure of 3.4 dB under the power consumption of 22 mW. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 158,160, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22996 [source]

    Wideband and low noise CMOS amplifier for UWB receivers

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2007
    Jihak Jung
    Abstract An ultra-wideband (UWB) low noise amplifier (LNA) that consists of two common-source and shunt-feedback stages is presented. Measurement results show the maximum gain (S21) of 13.5 dB with the 3-dB band from 1.85 to 10.2 GHz and return losses (S11, S22) of less than ,10 dB from 3 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 1.85 to 10.2 GHz. To our knowledge, these are the best measured data up to date for the CMOS LNA. The input-referred third-order intercept point (IIP3) and the input-referred 1-dB compression point (P1dB) are obtained as ,1 dBm and ,9 dBm, respectively, while consuming 13 mW in 0.18 ,m RF CMOS process. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 749,752, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22282 [source]

    AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005
    R. Schwindt
    Abstract A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of ,7.5 dB, and output return loss of ,15 dB at 8.5 GHz. The dc characteristics of individual 0.25-,m × 150-,m transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of ,6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    A low voltage folded cascode LNA for ultra-wideband applications

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2010
    Sunil L. Khemchandani
    Abstract A low noise amplifier scheme to achieve low-voltage and wide-bandwidth operation is presented. This circuit is based on folded cascode topology combined with wideband impedance matching and shunt peaking load. One of the drawbacks of the proposed scheme is that it uses more area than the conventional cascode due to the two additional inductors and capacitors to implement the capacitively coupled LC tanks. To reduce the area of the circuit, we have used stacked inductors, a brief study of these kinds of inductors is presented. Two low noise amplifiers have been fabricated using a mature 0.35 ,m BiCMOS technology, one using the cascode conventional approach and the other using the proposed topology. Measurement results show that for the same transistors operating conditions, the low-voltage amplifier performance is similar than the conventional cascode. By virtue of the small area of stacked inductors, the size of both low noise amplifiers is comparable. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2495,2500, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25530 [source]