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Nitrogen Incorporation (nitrogen + incorporation)
Selected AbstractsNitrogen Incorporation in an Al0.5Ga0.5PO4 Amorphous Solid Studied with 27Al and 31P NMR.CHEMINFORM, Issue 41 2003Stephanie Delsarte Abstract For Abstract see ChemInform Abstract in Full Text. [source] The effect of nitrogen incorporation on surface properties of silicon oxynitride filmsPHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 1 2009Jongin Hong Abstract In order to investigate the surface heterogeneity of silicon oxynitride films, we observed the nanoscale variation of the surface potential by Kelvin probe force microscopy (KFM), the molecular bonding characteristics by Fourier transform infrared spectrometry (FTIR), and the wetting behavior by contact angle measurement. Nitrogen incorporation into silicon oxynitride films influenced the decrease in the surface potential and the polar component of the surface free energy. We present the first correlation between the nanoscale measurement of the surface potential and the macroscopic measurement of the surface free energy in silicon oxynitride films grown by a standard plasma-enhanced chemical vapor deposition (PECVD) technique. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Formation of Oxynitride as the Photocatalytic Enhancing Site in Nitrogen-Doped Titania Nanocatalysts: Comparison to a Commercial Nanopowder,ADVANCED FUNCTIONAL MATERIALS, Issue 1 2005X. Chen Abstract A nitrogen-doped TiO2 nanocolloid has been successfully prepared and its properties compared with the commercially available TiO2 nanomaterial, Degussa P25. Several characterization techniques, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron spectroscopy (TEM), Fourier transform infrared (FT-IR) spectroscopy, Raman scattering, and UV-visible reflectance spectra, are combined in order to determine the crystal phase and grain size, shape, degree of nitrogen incorporation, and nature of the resultant oxynitride chemical bonding on the surface and in the bulk. The high relative photocatalytic activity of the nitrogen doped-TiO2 nanocolloid is evaluated through a study of the decomposition of methylene blue under visible light excitation. The ease and degree of substitutional-insertional nitrogen doping is held accountable for the significant increase in photocatalytic activity in the porous nanocolloid versus the nitrided commercial nanopowder. It is suggested that the nitrogen incorporation produces an NO bonding region as evidenced by the resulting XPS spectrum. [source] The effect of nitrogen incorporation on surface properties of silicon oxynitride filmsPHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 1 2009Jongin Hong Abstract In order to investigate the surface heterogeneity of silicon oxynitride films, we observed the nanoscale variation of the surface potential by Kelvin probe force microscopy (KFM), the molecular bonding characteristics by Fourier transform infrared spectrometry (FTIR), and the wetting behavior by contact angle measurement. Nitrogen incorporation into silicon oxynitride films influenced the decrease in the surface potential and the polar component of the surface free energy. We present the first correlation between the nanoscale measurement of the surface potential and the macroscopic measurement of the surface free energy in silicon oxynitride films grown by a standard plasma-enhanced chemical vapor deposition (PECVD) technique. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Composition and formation mechanism of zirconium oxynitride films produced by reactive direct current magnetron sputteringPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2004J. M. Ngaruiya Abstract Direct current magnetron sputtered zirconium oxynitride films show an improvement in both deposition rate and physical properties compared to zirconium oxide. Here we seek to understand these beneficial effects and report on the film composition and crystallographic structure. Based on a thermochemical description together with a modeling of formation kinetics we propose a film formation mechanism, which explains many of the observations. Rutherford backscattering spectroscopy (RBS) shows early nitrogen incorporation at 64% N2 flow in disagreement with the predictions of thermochemistry. The stoichiometry is only successfully simulated with the use of an expanded Berg,Larsson model with a low replacement coefficient of about 0.1 of nitrogen by oxygen after metal-nitrogen bond formation. The deviation from complete replacement as predicted by thermodynamics illustrates the importance of kinetics in film formation. The model further successfully predicts the variation of the mass deposition rate. The X-ray diffraction analyses suggest that, within the crystalline phase, nitrogen atoms occupy oxygen sites, resulting in an unchanged zirconium oxide structure. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] MBE growth of InAsN on (100) InAs substratesPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2005V. Sallet Abstract The growth of InAsN on (100) InAs substrates by molecular beam epitaxy is investigated. The incorporation of nitrogen in the alloy is compared with the case of GaAsN grown on GaAs. Under the same conditions, lower nitrogen contents are systematically measured in InAsN. In both cases, nitrogen incorporation was found to be enhanced with the decrease of the arsenic flux supplied to the surface, whereas the nitrogen concentrations measured in InAsN and GaAsN as a function of the growth temperature follow opposite tendencies. For GaAsN, the N content slightly increases as the growth temperature raises from 360 °C to 460 °C. On the contrary, for InAsN alloys, no significant amount of N is observed over the range 420,460 °C and a decrease of the growth temperature down to 370 °C is required to incorporate 1% of nitrogen in InAsN. The comparison of formation enthalpies of binary constituents enables to understand these behaviours. A following discussion addresses the local environment of N atoms in GaInAsN materials. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Initiated CVD of Poly(methyl methacrylate) Thin Films,CHEMICAL VAPOR DEPOSITION, Issue 10 2005K. Chan Abstract Initiated CVD (iCVD), a dry method, is able to produce poly(methyl methacrylate) (PMMA) thin films by utilizing a reactive gaseous mixture of the monomer methyl methacrylate and the initiator triethylamine. The deposition rate is twenty times faster with the use of the initiator. Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) show high structural resemblance between iCVD PMMA and conventional PMMA, and the degree of functionality retention increases with decreasing residence time in the vacuum chamber. XPS detection of nitrogen incorporation is consistent with the incorporation of the initiator into the polymer chains. NMR spectroscopy on completely dissolved films shows that the tacticity of iCVD PMMA resembles that of conventional, radically polymerized PMMA. Altogether these observations support the hypothesis that, for iCVD PMMA, the polymerization is by a free-radical mechanism. [source] |