Nanowire Networks (nanowire + network)

Distribution by Scientific Domains


Selected Abstracts


Self-Organization of a Highly Integrated Silicon Nanowire Network on a Si(110),16,×,2 Surface by Controlling Domain Growth

ADVANCED FUNCTIONAL MATERIALS, Issue 21 2009
Ie-Hong Hong
Abstract Here, bottom-up nanofabrication for the two-dimensional self-organization of a highly integrated, well-defined silicon nanowire (SiNW) mesh on a naturally-patterned Si(110),16,×,2 surface by controlling the lateral growths of two non-orthogonal 16,×,2 domains is reported. This self-ordered nanomesh consists of two crossed arrays of parallel-aligned SiNWs with nearly identical widths of 1.8,2.5,nm and pitches of 5.0,5.9,nm, and is formed over a mesoscopic area of 300,×,270,nm2 so as to show a high integration density in excess of 104,µm,2. These crossed SiNWs exhibit semiconducting character with an equal band gap of ,0.95,eV as well as unique quantum confinement effect. Such an ultrahigh-density SiNW network can serve as a versatile nanotemplate for nanofabrication and nanointegration of the highly-integrated metal-silicide or molecular crossbar nanomesh on Si(110) surface for a broad range of device applications. Also, the multi-layer, vertically-stacked SiNW networks can be self-assembled through hierarchical growth, which opens the possibility for creating three-dimensionally interconnected crossbar circuits. The ability to self-organize an ultrahigh-density, functional SiNW network on a Si(110) surface represents a simple step toward the fabrication of highly-integrated crossbar nanocircuits in a very straightforward, fast, cost-effective, and high throughput process. [source]


Spontaneous Organization of Three-Dimensionally Packed Trigonal Selenium Microspheres into Large-Area Nanowire Networks,

ADVANCED MATERIALS, Issue 22 2003
X. Cao
Nanowire networks of trigonal selenium (see Figure) have been prepared over a large area through a spontaneous organization process. This has been realized via the vapor deposition of selenium and subsequent crystallization. The network of selenium nanowires is expected to find applications in nanoscale circuits as well as nanoscale electronic and photon devices. [source]


Synthesis of Large-Area Three-Dimensional Polyaniline Nanowire Networks Using a "Soft Template"

MACROMOLECULAR RAPID COMMUNICATIONS, Issue 5 2005
Wenbin Zhong
Abstract Summary: Three-dimensional polyaniline (PANI) nanowire networks were synthesized in high yield using a "soft template" self-assembled with hexadecyltrimethylammonium bromide and oxalic acid. The PANI nanowire networks had diameters from 35,100 nm depending on synthesis conditions and/or procedures. The networks and the "cross-linking points" were clearly observed by field-emission scanning electron microscopy and transmission electron microscopy. A possible mechanism for the formation of three-dimensional PANI nanowire networks is discussed. FESEM image of PANI with three-dimensional nanowire networks. [source]


Spontaneous Organization of Three-Dimensionally Packed Trigonal Selenium Microspheres into Large-Area Nanowire Networks,

ADVANCED MATERIALS, Issue 22 2003
X. Cao
Nanowire networks of trigonal selenium (see Figure) have been prepared over a large area through a spontaneous organization process. This has been realized via the vapor deposition of selenium and subsequent crystallization. The network of selenium nanowires is expected to find applications in nanoscale circuits as well as nanoscale electronic and photon devices. [source]


Synthesis of Large-Area Three-Dimensional Polyaniline Nanowire Networks Using a "Soft Template"

MACROMOLECULAR RAPID COMMUNICATIONS, Issue 5 2005
Wenbin Zhong
Abstract Summary: Three-dimensional polyaniline (PANI) nanowire networks were synthesized in high yield using a "soft template" self-assembled with hexadecyltrimethylammonium bromide and oxalic acid. The PANI nanowire networks had diameters from 35,100 nm depending on synthesis conditions and/or procedures. The networks and the "cross-linking points" were clearly observed by field-emission scanning electron microscopy and transmission electron microscopy. A possible mechanism for the formation of three-dimensional PANI nanowire networks is discussed. FESEM image of PANI with three-dimensional nanowire networks. [source]


Resistivity measurements of Mo6S3I6 nanowire networks

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 13 2006
B. Ber
Abstract We present measurements of resistivity on Mo6S3I6 nanowire networks as a function of temperature, moisture and high-temperature processing conditions. The room-temperature conductivity of as-grown material is s300 K , 0.04 S/m with a linear I ,V characteristic. The temperature dependence of conductivity of pristine samples closely follows the expression s = s0 exp (,T0/T)b, where b = 1/4. Removal of interstitial iodine from the network by annealing in vacuum gives rise to a cross-over to b = 1/2 and an increase in conductivity. Different scenarios for observed cross-over are discussed. The introduction of water vapour leads to a decrease in conductivity and reveals that the resistivity of the network is sensitive to interstitial water molecules, which is interesting for potential chemical sensor applications. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Design and Synthesis of Hierarchical Nanowire Composites for Electrochemical Energy Storage

ADVANCED FUNCTIONAL MATERIALS, Issue 21 2009
Zheng Chen
Abstract Nanocomposites of interpenetrating carbon nanotubes and vanadium pentoxide (V2O5) nanowires networks are synthesized via a simple in situ hydrothermal process. These fibrous nanocomposites are hierarchically porous with high surface area and good electric conductivity, which makes them excellent material candidates for supercapacitors with high energy density and power density. Nanocomposites with a capacitance up to 440 and 200,F g,1 are achieved at current densities of 0.25 and 10 A g,1, respectively. Asymmetric devices based on these nanocomposites and aqueous electrolyte exhibit an excellent charge/discharge capability, and high energy densities of 16,W h kg,1 at a power density of 75,W kg,1 and 5.5,W h kg,1 at a high power density of 3,750,W kg,1. This performance is a significant improvement over current electrochemical capacitors and is highly competetive with Ni,MH batteries. This work provides a new platform for high-density electrical-energy storage for electric vehicles and other applications. [source]