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N Films (n + film)
Selected AbstractsChemInform Abstract: Synthesis and Electronic Properties of Th,N Films.CHEMINFORM, Issue 27 2002T. Gouder Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrationsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2006F. Nakajima Abstract We have successfully grown high-N-content GaAsN films up to 5.1% on GaAs(001) substrates using tertiarybutylarsine (TBAs) as the As precursor by metalorganic vapour phase epitaxy (MOVPE). The narrow X-ray diffraction (XRD) peaks and clear Pendellosung fringes indicate that the GaAsN/GaAs interface is fairly flat and the GaAsN layers are uniform. By the photoluminescence (PL) measurement at 10 K, the clear PL peaks related to the near-band-edge transition could be detected and the bandgap energy was red-shifted to 1.16 eV in 1.9%-N GaAsN film. But, in higher N-content films no peak could be detected. So, post growth annealing in the reactor was applied to 4.7% and 5.1%-N films, and resulted in an enhancement of the PL peak intensity, and the bandgap energy of 5.1%-N film was consequently determined to be 0.95 eV at room temperature. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Vacuum-Ultraviolet Photopolymerisation of Amine-Rich Thin FilmsMACROMOLECULAR CHEMISTRY AND PHYSICS, Issue 10 2008Florina Truica-Marasescu Abstract Nitrogen-rich organic thin films were deposited by VUV-assisted photochemical polymerisation of flowing C2H4/NH3 mixtures. The fundamental reaction mechanisms of these binary gas mixtures were investigated as a function of the wavelength of two almost monochromatic VUV sources. Compositions of these "UV-PE:N" films close to the surface were determined by XPS, and the amine concentrations and selectivities were quantified via chemical derivatisation. The UV-PE:N films were compared with plasma polymers deposited using low-pressure glow discharges in similar gas flow mixtures, "L-PPE:N"; it is shown that VUV photochemistry is superior to plasma chemistry in producing almost monofunctional organic thin films. [source] MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrationsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2006F. Nakajima Abstract We have successfully grown high-N-content GaAsN films up to 5.1% on GaAs(001) substrates using tertiarybutylarsine (TBAs) as the As precursor by metalorganic vapour phase epitaxy (MOVPE). The narrow X-ray diffraction (XRD) peaks and clear Pendellosung fringes indicate that the GaAsN/GaAs interface is fairly flat and the GaAsN layers are uniform. By the photoluminescence (PL) measurement at 10 K, the clear PL peaks related to the near-band-edge transition could be detected and the bandgap energy was red-shifted to 1.16 eV in 1.9%-N GaAsN film. But, in higher N-content films no peak could be detected. So, post growth annealing in the reactor was applied to 4.7% and 5.1%-N films, and resulted in an enhancement of the PL peak intensity, and the bandgap energy of 5.1%-N film was consequently determined to be 0.95 eV at room temperature. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Activation energy of Mg in a -plane Ga1,xInx N (0 < x < 0.17)PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2009Daisuke Iida Abstract We investigated the electrical properties of Mg-doped Ga1,xInx N grown on an a -plane template. High-hole-concentration p-type Mg-doped Ga1,xInx N films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a -plane GaN grown on an r -plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm,3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a -plane Ga0.83In0.17N was found to be as low as 48 meV. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Comparative Studies on Mo,Cr,N and Al,Cr,N Coatings Obtained by PVD Dual Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Yacine Benlatreche Abstract Recently, several studies have shown that the addition of a secondary element likes Al, Si, etc. to nitride and carbide binary systems such as Ti,N and Cr,N improved their structural and mechanical properties and also their thermal stability. In this study, we realized a comparison between the effects of aluminium or molybdenum addition on the properties of the Cr,N system. The (Cr,Al)N and (Cr,Mo)N films were deposited by RF dual magnetron sputtering. To control the aluminium and molybdenum contents in (Cr,Al)N and in (Cr,Mo)N films, respectively, we modified the Cr, Al and Mo target bias. The structural, morphological and composition analyses of the deposited films were carried out using X-ray diffraction (XRD) and SEM equipped with an energy dispersive spectroscopy (EDS) microanalysis. The variation of the residual stresses with the Al and Mo contents has been studied using the Newton's rings method. The obtained Al contents in (Cr,Al)N deposited films varied between 0 and 51,at.% while the Mo contents in (Cr,Mo)N layers varied between 0 and 42,at.%. A morphological change from amorphous to columnar films has been observed with the addition of Al in the case of (Cr,Al)N coatings, while all the (Cr,Mo)N films presented a columnar structure. The residual stresses of the (Cr,Mo)N coatings are higher than the (Cr,Al)N ones but they exhibited a similar behaviour for both coatings. [source] A Facile Route to Synthesize the Ti5NbO14 Nanosheets by Mechanical Cleavage ProcessJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 2 2010Na Zhang Layered and rod-like K3Ti5NbO14 was synthesized via the solid-state chemistry, and it was exfoliated into nanosheets through a novel mechanical cleavage technology. X-ray diffraction was utilized to determine the phase changes of all the specimen during the total process, and the microstructure of the samples was analyzed by scanning electron microscope and transmission electron microscope. The formation mechanism was also discussed in detail, the results indicated that the compression and shearing should play a main function in the crack and the cleavage of the aggregated layered compound. UV,vis absorption spectroscopy was used to monitor the consecutive buildup of the (PEI/Ti5NbO14)n film. The resulting quasi-linear increase at the top absorbance as a function of the sequential assembly number for the multilayer film indicated that the nanosheet had deposited uniformly in each dipping cycle. The photocatalytic activity of K3Ti5NbO14 -related products was examined. Compared with original layered compound, nanosheet precipitate had good property under irradiation of ultraviolet light. [source] Electrochemical Characterization of (ZnO/dsDNA)n Layer-by-layer Films and Detection of Natural DNA Oxidative DamageCHINESE JOURNAL OF CHEMISTRY, Issue 10 2009Meng Du Abstract The positively charged nano-ZnO and negatively charged natural DNA were alternately adsorbed on the surface of a gold electrode, forming (ZnO/dsDNA)nlayer-by-layer films. Valuable dynamic information for controlling the formation and growth of the films was obtained by cyclic voltammetry and electrochemical impedance spectroscopy. Differential pulse voltammetric (DPV) measurements showed that the electroactive probe methylene blue (MB) could be loaded in the (ZnO/dsDNA)nfilms from its solution, and then released from the films into Britton-Robinson (B-R) buffer. The complete reloading of MB in the films could be realized by immersing the films in MB solution again. However, after incubation in the solution of carcinogenic metal nickel, the damaged (ZnO/dsDNA)n films could not return to their original and fully-loaded state, and showed smaller DPV peak currents. The results demonstrated that the DNA damage induced by the hydroxyl radical could be achieved by electrochemistry. [source] | ||||||||||||||||