Mott Transition (mott + transition)

Distribution by Scientific Domains


Selected Abstracts


Mott transition in the Hubbard model on the triangular lattice

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2010
Takuya Yoshioka
Abstract We investigate a metal,insulator Mott transition in the half-filled Hubbard model on the triangular lattice. In this study, we make use of the path-integral renormalization group method with an iteration and truncation scheme proposed recently, which allows us to access the competing ground states around the transition point. We find for a cluster with 36 sites that as the Hubbard interaction U increases, the paramagnetic metallic (PM) state undergoes a metal,insulator phase transition to a nonmagnetic insulating (NMI) state at , where t is the transfer integral. A detailed analysis around the transition point shows that the Mott transition is of first order. [source]


Ionization equilibrium and Mott transition in an excited semiconductor, phase diagram

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2009
F. Richter
Abstract The thermodynamic properties of an electron,hole plasma in a highly excited semiconductor are investigated. Special attention is directed to the influence of many-particle effects like screening, lowering of the ionization energy, and Mott effect on the ionization equilibrium. In particular, the Mott effect limits the region of existence of excitons and, therefore, of a possible Bose,Einstein condensate at low temperatures. Results for the chemical potential and the degree of ionization are presented for cuprous oxide. A possible window for the occurrence of a BEC of excitons taking into account the Mott effect is shown. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]