			Home About us Contact

Millimeter-wave Applications (millimeter-wave + application)

Distribution by Scientific Domains

Physics and Astronomy	50%
Engineering	50%

Selected Abstracts

From lumped-element circuits to monolithic integrated circuits: A contribution to RF and microwave mixer design

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 4 2005
Peter Waldow
Abstract This article deals with the mixer design for UHF-, microwave- and millimeter-wave applications. Thereby, several aspects such as the chosen technology (lumped elements, hybrid- or monolithic integration) and the applied transmission line (printed circuits, strip-, slot- or coplanar line) are considered. During the course of this contribution, the authors point out the developments in mixer design from lumped-element circuits to monolithic integrated circuits on the example of research activities in Duisburg and Kamp-Lintfort, Germany. The results of these scientific investigations, regarding both the theoretical and experimental aspects, show the feasibility of the proposed techniques. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005. [source]

Low-loss and high-isolation active type cascode switch in 0.13-,m CMOS for millimeter-wave applications

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 8 2009
Dong Ho Lee
Abstract This article presents two types of switches which are fabricated in 0.13-,m standard CMOS process characterized up to 50 GHz. The first is the conventional series NMOS switch with an optimum gate width which is adjusted by measuring various sized devices. The second is a new active type cascode switch for millimeter-wave phased array systems. The series NMOS switch produces 3 dB insertion loss and 7.5 dB isolation at 40 GHz. In contrast, the active type cascode switch has 7.5 dB better insertion loss (Gain) and 20 dB better isolation than the passive switch at 40 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1856,1858, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24476 [source]

AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010
Shiping Guo
Abstract In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10,nm AlInN barrier were grown with very low Ga background level (<1%). The low Rsh of 215,,/sq was obtained with an excellent standard deviation of 1.1% across 3, wafers. Lehighton RT contactless Hall tests show a high mobility of 1617,cm2/V,s and sheet charge density of 1.76,×,1013/cm2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1,µm and 25,nm Al2O3 passivation show maximum drain current (IDS,max) of 2.36,A/mm at VGS,=,2,V. Gate recessed devices with 0.15,µm gate length and 25,nm Al2O3 passivation resulted in maximum transconductance (gm) of 675,mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum fT is 86,GHz and fmax is 91.7,GHz. [source]

Laterally engineered field-plate GaN HEMTs for millimeter-wave applications

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
K. S. Boutros
Abstract A laterally Engineered Field Plate (EFP) design is implemented to obtain a field-plated, 30 nm gate structure with a small added capacitance due to the presence of the field plate. By reducing the field plate length, and simultaneously placing it away from the gate, we are able to reduce the field plate capacitance while maintaining its effectiveness in reducing the peak electric field at the gate edge. GaN HEMT EFP devices were fabricated with 30 nm gate lengths, and 70nm field plates. A three-terminal breakdown voltage (VBD) of 63 V was measured for the 30 nm EFP device. This VBD represents a 2x improvement over the breakdown of 100nm conventional T-gate devices fabricated on the same wafer. The device had an extrinsic FT of 65 GHz and an FMAX of 120 GHz. Improvement in both Pout and PAE was also realized with this new gate design compared to conventional T-gate devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]