MEMS Technology (mem + technology)

Distribution by Scientific Domains


Selected Abstracts


Regeneration-type nerve electrode using bundled microfluidic channels

ELECTRONICS & COMMUNICATIONS IN JAPAN, Issue 4 2009
Takafumi Suzuki
Abstract Neural interface devices that will allow signals from the human nervous system to control external equipment are extremely important for the next generation of prosthetic systems. A novel multichannel regeneration-type nerve electrode designed to record from and stimulate peripheral nerves has been developed to allow the control of artificial hands and to generate artificial sensations. In this study a novel flexible regeneration microelectrode based on the nerve regeneration principle was designed and fabricated using MEMS technologies. The electrode, which was fabricated on a 25-µm-thick parylene C substrate, has multiple fluidic channels. Each fluidic channel was 100µm wide×30µm high×1500µm long and featured multiple electrodes inside them as recording and stimulating sites. They also served as guidance channels for the regenerating axons. © 2009 Wiley Periodicals, Inc. Electron Comm Jpn, 92(4): 29,34, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10059 [source]


RF MEMS status and perspectives

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2008
Fabio Coccetti
Abstract The key challenges for the next generation of communication architectures are related to their ability to modify their properties in order to fit with different applications and environmental conditions. Among the emerging approaches targeting these miniaturized systems called "Smart Microsystems", RF MEMS technology is considered as one of the most attractive and enabling solution. This paper will outline the main characteristics exhibited by RF MEMS technologies as well as the main technological process flow, the design and modelling methodologies that have to be implemented in order to meet the multi-physics and multi-scale challenge encountered in this field. The paper will continue with a major issue faced by RF MEMS related to reliability. Finally, the paper will finish with the presentation of innovative smart devices and systems that could be envisioned in the future. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


EM design of broadband RF multiport toggle switches

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 4 2004
W. Simon
Abstract Radio frequency (RF) MEMS is an emerging sub-area of MEMS technology that is revolutionizing RF and microwave applications. RF MEMS devices have a broad range of optional applications in military and commercial wireless communication, and navigation and sensor systems. This article presents the EM design of different multiport toggle switches. Such a multiport switch can be used in the compact designs of switching matrices, routing networks, or phase shifters. One application range is the creation of electronically steerable antenna arrays, which can be used for radar applications and satellite communication. The miniaturized switches are based on the single pole single throw (SPST) toggle switch and, in addition to their small size, they have an increased RF performance regarding losses and operation bandwidth (DC to 50 GHz). A 3D FDTD field solver has been used for the electromagnetic design of all the switches. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 329,337, 2004. [source]


RF MEMS status and perspectives

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2008
Fabio Coccetti
Abstract The key challenges for the next generation of communication architectures are related to their ability to modify their properties in order to fit with different applications and environmental conditions. Among the emerging approaches targeting these miniaturized systems called "Smart Microsystems", RF MEMS technology is considered as one of the most attractive and enabling solution. This paper will outline the main characteristics exhibited by RF MEMS technologies as well as the main technological process flow, the design and modelling methodologies that have to be implemented in order to meet the multi-physics and multi-scale challenge encountered in this field. The paper will continue with a major issue faced by RF MEMS related to reliability. Finally, the paper will finish with the presentation of innovative smart devices and systems that could be envisioned in the future. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Piezoelectric actuation of all-nitride MEMS

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
K. Tonisch
Abstract We present a MEMS technology based on (GaN/)AlGaN/GaN,heterostructures. Thereby the lower GaN layer represents the mechanical active layer, while the upper GaN and AlGaN layers supply the piezoelectrically active layers for actuation and the confinement of a 2D electron gas (at the lower interface). The 2DEG serves as back electrode for the piezoelectric actuation and as read,out, since it is modulated by the mechanical oscillation. The upper AlGaN and GaN layer both contribute to the total piezoelectric response, which was determined by piezoelectric force microscopy. The electrical field distribution throughout the heterostructure was determined by means of electroreflectance. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]