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Maximum Drain Current (maximum + drain_current)
Selected AbstractsA physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTsINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 3 2007Jonathan C. Sippel Abstract A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large- and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the heterointerface and finite effective width of the 2DEG gas have been incorporated in the analysis. The model predicts a maximum drain current of 523 mA/mm and transconductance of 138 mS/mm for a 1 ,m × 75 ,m device, which are in agreement with the experimental data. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007. [source] AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applicationsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010Shiping Guo Abstract In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10,nm AlInN barrier were grown with very low Ga background level (<1%). The low Rsh of 215,,/sq was obtained with an excellent standard deviation of 1.1% across 3, wafers. Lehighton RT contactless Hall tests show a high mobility of 1617,cm2/V,s and sheet charge density of 1.76,×,1013/cm2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1,µm and 25,nm Al2O3 passivation show maximum drain current (IDS,max) of 2.36,A/mm at VGS,=,2,V. Gate recessed devices with 0.15,µm gate length and 25,nm Al2O3 passivation resulted in maximum transconductance (gm) of 675,mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum fT is 86,GHz and fmax is 91.7,GHz. [source] Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching applicationPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2007Nariaki Ikeda Abstract We developed new ohmic electrodes combined with an Al-silicide and a molybdenum for AlGaN/GaN HFETs to realize a high power switching application. As a result, the maximum drain current of the HFET was over 55 A and the breakdown voltage was about 800 V. The specific on-state resistance of the HFET was smaller than that of a Si Cool MOSFET. Furthermore, we examined the dynamic characteristics. The turn-off and turn-on delay time were 14.8 nsec. and 8.4 nsec. at the condition of 100 V, respectively. These values were considerbly smaller compared with those of Si Cool MOSFETs. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gatePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2010Takayuki Sugiyama Abstract We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High power AlGaN/GaN HFETs on 4 inch Si substratesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009Nariaki Ikeda Abstract In this paper, we successfully demonstrate an AlGaN/GaN HFET with a high breakdown voltage on 4-inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer was grown. The breakdown voltage and the maximum drain current were achieved to be over 1.3 kV and 120 A, respectively. Furthermore, the suppression of a current collapse phenomenon was examined. The on-resistance was not significantly increased up to a high drain off-bias-stress of 900 V. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device propertiesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009H. Behmenburg Abstract We report on structural and device properties of AlInN/AlN/GaN transistor heterostructures grown by metal organic vapour phase epitaxy (MOVPE) on 2, sapphire substrates with AlInN barriers of thicknesses between 4 nm and 10 nm. The In content and thickness of the thin AlInN barrier is shown to be well determinable by high-resolution X-ray diffraction (HRXRD). Room temperature Hall measurements yielded similar mobility between 1400 cm2V,1s,1 and 1520 cm2V,1s,1 on all samples and increasing sheet carrier concentration ns with rising barrier thickness resulting in a minimum sheet resistance value of 200 Ohm/,. The effect of surface passivation with Si3N4 on the electrical properties is investigated and found to strongly increase sheet carrier concentration ns of the two-dimensional electron gas (2DEG) to values above 2×1013cm,2. Characterization of transistors with gate length Lg of 1.5 ,m produced from the grown samples reveals high transconductance (gm) and a maximum drain current (ID) of 300 mS/mm and ,1 A/mm, respectively. For the sample with 4.6 nm barrier thickness, a reduced gate leakage current (IGL) and a absolute value of the threshold voltage (Vth) of -1.2 V is detected. Radio frequency (RF) measurements of passivated samples lead to maximum current gain cut-off frequencies ft of 11 GHz and maximum oscillating frequencies fmax of 25 GHz. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Fabrication of AlGaN/GaN MIS-HFET using an Al2O3 high k dielectricPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003Ki-Yeol Park Abstract We report on a metal,insulator,semiconductor AlGaN/GaN heterostructure field-effect transistor (MIS-HFET) using Al2O3 simultaneously for channel passivation layer and as a gate insulator which was deposited by plasma enhanced atomic layer deposition(PE-ALD). Capacitance,voltage measurements show successful surface passivation by the Al2O3 dielectric layer. For a gate length 1.2 ,m with 15 ,m source-to-drain spacing the maximum drain current was 1.22 A/mm, the maximum transconductance was 166 mS/mm and the gate leakage current was 4 nA/mm at Vgs = ,20 V which is at least three orders of magnitude lower than that of conventional AlGaN/GaN HFETs. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||