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Magnetron Sputtering Technique (magnetron + sputtering_technique)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Characterization and electrical properties of new perovskite films of Ba(Ti,Zr)O3 type doped with lanthanum (BLZT)

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2007
E. Delgado
Abstract In the current work, we characterized a new family of compounds with perovskite-type structure with the general formula: Ba1,yLa2y/3Ti1,xZrxO3 (BLZT). Through XRD on crystalline powder we detected a single perovskite cubic phase, Pm3m (221), for the compounds with zirconium content (x) lower than 0.15 and lanthanum content (La) lower than 0.17. Upon increasing the x value in BLZT compounds, the value of La falls to 0.13. Morphology studies through SEM revealed that the incorporation of lanthanum into the composition of Ba(Ti,Zr)O3 (BZT) compounds produces the formation of bigger grains and materials with greater density. The stoichiometry for each compound was corroborated by atomic emission spectroscopy (AES-ICP). The lanthanum-doped compounds demonstrated higher relative permittivity values with respect to the BZT and a decrease of the Curie temperature (Tc) with relation to the amount of La3+ ion present in the structure. Finally, we grew thin films by using a target of the compound Ba0.90La0.067Ti0.91Zr0.09O3 over three different substrates under two atmospheres (Ar and O2), using the Magnetron Sputtering technique by Radio Frequency (RF), showing the best results when growth is over the substrate SrTiO3.Nb 0.1% in the [00l] direction under an O2 atmosphere. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Heat treatment induced structural and optical properties of rf magnetron sputtered tantalum oxide films

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 3 2007
S. V. Jagadeesh Chandra
Abstract Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and crystalline silicon (111) substrates held at room temperature by sputtering of tantalum in an oxygen partial pressure of 1x10 -4 mbar. The films were annealed in air for an hour in the temperature range 573 , 993 K. The effect of annealing on the chemical binding configuration, structure and optical absorption of tantalum oxide films was systematically studied. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Dependence of structural and optical properties of Zn1,xCdxO films on the Cd composition

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 13 2004
D. W. Ma
Abstract Zn1,xCdxO alloy semiconductors have great latent applications in short wavelength optoelectronic devices. By the dc reactive magnetron sputtering technique, ternary single-phased Zn1,xCdxO (0 , x , 0.53) alloy crystalline films were prepared on glass and sapphire substrates. For x = 0, 0.20, 0.36, 0.53, the band-gaps of the Zn1,xCdxO alloy films were estimated as 3.28, 3.21, 3.11 and 2.65 eV, respectively. Photoluminescence spectrum shows that the near-band-edge energy of the Zn0.8Cd0.2O film has a red-shift of 0.14 eV from that of pure ZnO reported previously. The green-yellow emission in the photoluminescence spectrum is assumed to mainly related to electron transitions from the single ionized oxygen vacancies (Vo+) to Zn, Cd vacancies (VZn,, VC,d), or oxygen interstice (Oi,). (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Effect of grain size on reactive diffusion between titanium and aluminium

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2010
Piotr Wiecinski
Abstract The aim of this paper was to examine the effect of titanium substrate structure refinement (to the nanometric scale) on the chemical and phase composition of Ti-Al intermetallic layers. The material examined in the study was commercially available pure titanium with average grain size of 65 ,m and 60 nm. The aluminium layer with thickness of 5 ,m were obtained on both substrates using magnetron sputtering technique. After annealing more phase from Ti , Al system on nano-crystalline titanium were observed compared to micro-crystalline one. The obtained intermetallic layer was thicker and more homogeneous on nano-crystalline substrate. The grain size of the substrate was effected on the topography, thickness and microstructure of the diffusive Ti-Al layers. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Photoluminescence properties of erbium-doped amorphous gallium-germanium-selenium films fabricated by RF sputtering

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S1 2009
Takahiko Imai
Abstract Chalcogenide glasses have various useful features for optical devices such as a high refractive index, low-loss transmission in the mid-IR, and low phonon energies. The fabrication of thin films is important for use in waveguide applications and integrated photonics. In this work, we report the properties of vacuum deposited films of gallium-germanium-selenium glasses onto fused silica substrates by an RF magnetron sputtering technique (RF electric power of 40-250 W and growth rate of 0.01-2.1 ,m/min). The concentration of Er3+ ions is controlled by the number of sintered Er2S3 small plates on a target. Samples are shown to be in an amorphous-like state as measured by X-ray diffraction experiments. Film thicknesses are proportional to the RF sputtering power and sputtering time. The compositions of films obtained from energy dispersive X-ray (EDX) analysis. There are much dependent on the condition of the sputtering target, for example whether the target is in the bulk or powder-state. Photoluminescence (PL) spectrum, intensity, and lifetime at 1550 nm band are measured by excitation from a 973 nm laser. The PL band of the films has a similar shape to those of bulk glasses. The PL intensity increased with the RF electric power. The PL lifetime at the 1550 nm band of the film is about 1.8-2.6 ms; the latter values are similar to those of bulk samples. The results show that the RF sputtering is a potential method of fabrication for Er-doped GeGaSe thin films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]