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Magnetron Sputtering Method (magnetron + sputtering_method)
Selected AbstractsPhotoluminescence from Boron-Doped Titanium Nitride Nanocomposite Thin Films Prepared by the Magnetron Sputtering MethodJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 12 2007Sheng-Guo Lu Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ,5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350,900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film. [source] Influence of the substrate on the structural properties of sputter-deposited ZnO filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2004Hyoun Woo Kim Abstract We have deposited ZnO films on various substrates using the r.f. magnetron sputtering method. X-ray diffraction and scanning electron microscopy coincidentally revealed that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si substrates. The XRD analysis revealed that the c -axis lattice constant decreased and increased, respectively, by thermal annealing for the ZnO films deposited on Si and sapphire substrates. Atomic force microscopy indicated that the surface roughness was higher for the films deposited on the sapphire substrates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Fabrication of 123-type high- Tc superconducting thin films on BaZrO3 -buffered MgO substratesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2006S. Adachi Abstract We have developed a stable preparation process for high-quality thin films of YBa2Cu3Oy (123)-type high- Tc superconductors (HTS) for the ground plane of single-flux-quantum (SFQ) devices. The films were deposited on MgO (100) substrates by an off-axis DC magnetron sputtering method. During deposition, the substrates were directly heated by thermal radiation from a heater. No adhesive paste was used for fixing the substrate. Possibility of chip contamination due to the paste could be completely eliminated. The insertion of a BaZrO3(BZO)-buffer layer was effective to obtain flat epitaxial 123 films with complete c -axis orientation. The flat ground plane could play a role as a suitable foundation for multilayer films of SFQ devices. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] |