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Magnetron Sputtering (magnetron + sputtering)
Kinds of Magnetron Sputtering Terms modified by Magnetron Sputtering Selected AbstractsNitrided Amorphous Stainless Steel Coatings Deposited by Reactive Magnetron Sputtering from an Austenitic Stainless Steel TargetADVANCED ENGINEERING MATERIALS, Issue 1-2 2009Salvatore Cusenza Abstract Stainless steel films were reactively magnetron sputtered in argon/nitrogen gas flow onto oxidized silicon wafers using austenitic AISI 316 stainless-steel targets. The deposited films of about 300,nm thickness were characterized by conversion electron Mö-i;ssbauer spectroscopy, magneto-optical Kerr-effect, X-ray diffraction, Rutherford backscattering spectrometry, and resonant nuclear reaction analysis. These complementary methods were used for a detailed examination of the nitriding effects for the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of postvacuum-annealing was examined by perturbed angular correlation to achieve a comprehensive understanding of the nitriding process and phase formation. The amorphous phase is not very stable and crystallization can be observed at 973,K. [source] Relationship between Condition of Deposition and Properties of W-Ti-N Thin Films Prepared by Reactive Magnetron Sputtering,ADVANCED ENGINEERING MATERIALS, Issue 3 2006V. Kuchuk A correlation between the film properties of nitrides, oxides etc., and their structure, is of fundamental importance , not only for thin solid films physics but also for practical applications. The structure of the films depends on deposition methods and their parameters. The relationship between properties (chemical and phase compositions, surface morphology, and electrical resistivity) and nitrogen partial pressure of reactive magnetron sputtered W-Ti-N thin films has been discussed here in detail. [source] Structured Ti/Hydrocarbon Plasma Polymer Nanocomposites Produced By Magnetron Sputtering with Glancing Angle DepositionPLASMA PROCESSES AND POLYMERS, Issue 1 2010Andrei Choukourov Abstract Structured Ti/hydrocarbon plasma polymer nanocomposite films are deposited at a glancing angle by magnetron sputtering of titanium in an Ar/hexane mixture and by sequential magnetron sputtering of titanium and polypropylene. The surface chemistry of such films is tuned by adjusting the gas mixture composition. The structure of the substrate may convert the morphology of organic films deposited at a glancing angle from continuous to nanostructured thin films. [source] Comparative Studies on Mo,Cr,N and Al,Cr,N Coatings Obtained by PVD Dual Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Yacine Benlatreche Abstract Recently, several studies have shown that the addition of a secondary element likes Al, Si, etc. to nitride and carbide binary systems such as Ti,N and Cr,N improved their structural and mechanical properties and also their thermal stability. In this study, we realized a comparison between the effects of aluminium or molybdenum addition on the properties of the Cr,N system. The (Cr,Al)N and (Cr,Mo)N films were deposited by RF dual magnetron sputtering. To control the aluminium and molybdenum contents in (Cr,Al)N and in (Cr,Mo)N films, respectively, we modified the Cr, Al and Mo target bias. The structural, morphological and composition analyses of the deposited films were carried out using X-ray diffraction (XRD) and SEM equipped with an energy dispersive spectroscopy (EDS) microanalysis. The variation of the residual stresses with the Al and Mo contents has been studied using the Newton's rings method. The obtained Al contents in (Cr,Al)N deposited films varied between 0 and 51,at.% while the Mo contents in (Cr,Mo)N layers varied between 0 and 42,at.%. A morphological change from amorphous to columnar films has been observed with the addition of Al in the case of (Cr,Al)N coatings, while all the (Cr,Mo)N films presented a columnar structure. The residual stresses of the (Cr,Mo)N coatings are higher than the (Cr,Al)N ones but they exhibited a similar behaviour for both coatings. [source] Ion Energy Distributions in Magnetron Sputtering of Zinc Aluminium OxidePLASMA PROCESSES AND POLYMERS, Issue S1 2009Thomas Welzel Abstract Ion energy distributions have been measured with an energy-dispersive mass spectrometer during magnetron sputtering of Al doped ZnO. A d.c. and a pulsed d.c. discharge have been investigated. Different positive ions from the target material have been observed with low energies in d.c. and a second energy peak of about 30 eV in pulsed d.c. with only weak additional energy due to the sputter process. Negative ions are mainly O, with energies corresponding to the target voltage of several 100 eV. They originate from the target and barely from the (O2) gas and hit the substrate opposite the race track. In pulsed d.c., due to the varying target voltage, energies of up to 500 eV have been observed. With increasing pressure, negative ions at the substrate are reduced exponentially in their density but not in their energy. [source] Structural and Mechanical Study of Nanocomposite Ti,Zr,C,H Coatings Prepared by Reactive Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Diego Martínez-Martínez Abstract Nanocomposite structures formed by small crystallites embedded in a lubricant matrix present moderate,high hardness, good toughness, and low values of friction coefficient and wear rate, and they are a promising alternative for protective tasks. In this study, we have prepared Ti,Zr,C,H films as potential candidates as protective layers for biocompatible applications. The constituting elements were selected due to their proven good biocompatibility at the macroscale. The films were prepared by reactive dc magnetron sputtering, and further characterized by X-ray photoelectron spectroscopy and X-ray diffraction. Mechanical and tribological properties were also evaluated. [source] Optical Emission Spectroscopy Analysis of Ar/N2 Plasma in Reactive Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Angélique Bousquet Abstract The ternary silicon carbide-nitride SiCxNy presents very promising properties: hardness, low chemical reactivity, and resistance to oxidation. This material can be deposited by various processes, but reactive magnetron sputtering is one of the most versatile. In this paper, we investigated by optical emission spectroscopy an argon-nitrogen plasma used with a silicon carbide target to deposit SiCxNy films. First, we observed the physical aspect of the discharge is modified not only with the injected atmosphere but also with target surface state, which highly influences the N2 dissociation rate. Then, we followed two species coming from target sputtering: CN and Si. This study confirms the target nitriding up to a certain N2 fraction. Finally, the OES information was related to the deposited film composition. [source] A Study of Ta Content Effect on Electro-Chemical Properties of Ir-Ta-O Coatings Deposited by Unbalanced Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2007Sung Dae Kim Abstract In this study, Ir-Ta-O coating with various Ta contents in the range from 0 to 21.1 at.-% were synthesized by unbalanced magnetron sputtering (UBMS) method. The chemical concentration, crystalline structure, binding state, and morphology of coatings were characterized by electron probe microanalyzer (EPMA), X-ray photoelectron (XPS), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM). In addition, the possibilities of Ir-Ta-O coatings synthesized by UMBS on a real dimensionally stable anode (DSA) electrode were investigated by electro-chemical application test. Ta existed mainly as a densely packed tantalum oxide compound in the Ir-Ta-O coatings and Ta oxidation states were changed from low oxidation state into high oxidation state in accordance with increase in Ta contents. The feasibility of making a DSA electrode prepared by physical vapor deposition (PVD) technique was demonstrated through the present work. [source] A New Approach to the Deposition of Elemental Boron and Boron-Based Coatings by Pulsed Magnetron Sputtering of Loosely Packed Boron Powder TargetsPLASMA PROCESSES AND POLYMERS, Issue S1 2007Martynas Audronis Abstract Large numbers of potential application areas for elemental boron and boron-based thin film materials make this subject area a focus of significant scientific and industrial interest. Applications include thermoelectric energy conversion devices, biomedical implants, metalworking tools and automotive components. Boron is however also recognised widely to be a difficult-to-deposit material. Therefore, a new technique to deposit boron (and other boron-based materials) by pulsed magnetron sputtering of loosely packed powder targets has been proposed. Among the benefits of this approach are: improved stability of the deposition process, increased speed and flexibility of target preparation, enhanced time- and cost-effectiveness and the ability to control readily the target and hence the chemical composition of the coating. [source] On Some Characteristics of Ti Oxynitrides Obtained by Pulsed Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2007Mariana Braic Abstract TiOxNy coatings were investigated as possible candidates for ion diffusion barrier layers. The elemental and phase composition, texture, hardness, adhesion, and corrosion resistance of the coatings were analyzed. The ion release in Ringer solution for uncoated and coated samples were also determined. The film properties were found to significantly depend on the reactive gas composition (O2/N2 ratio). The coatings proved to enhance the corrosion protection and to reduce the ion release of the uncoated specimens. [source] Development of Diamond Machinable Films by Reactive Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2007Christian Schulz Abstract Thin Ni-doped titanium nitride (Ti-Ni-N) films were deposited on X42Cr13 steel samples by reactive magnetron sputtering. By varying the nitrogen gas flow and target composition, films with different nickel and nitrogen contents were grown with a plastic universal hardness between 7.2 and 17.2 GPa. SEM analysis revealed amorphous, fine crystalline and columnar structure depending on the chemical composition. Furthermore, a contact test was carried out to investigate the reactivity between the film surface and single crystalline diamond. Analysis of the films and the diamond by SEM and EDX showed especially that films with an average nitrogen and nickel content did not react with diamond. [source] The wet corrosion of molybdenum thin film , Part III: The effect of Ti and NbMATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 5 2006C. R. Tomachuk Abstract Magnetron sputtering has become the process of choice for the deposition of a wide range of industrially important coatings. Over the last decade, interest in molybdenum thin films prepared by magnetron sputtering has been increasing; however, little research has been done on molybdenum-titanium and molybdenum-niobium alloy thin films. During the current study, electrochemical impedance spectroscopy (EIS) was employed to investigate the effect on the corrosion resistance in basic chloride environments of adding titanium and niobium species to molybdenum thin films deposited by physical vapor deposition. The results indicate that the MoTi alloy thin films exhibit better protective properties than either the molybdenum-niobium alloy or unalloyed molybdenum thin films. [source] Characterization of reactive DC magnetron sputtered TiAlN thin filmsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2008B. Subramanian Abstract Thin films of about 1,m Titanium Aluminum Nitride (TiAlN) were deposited onto mild steel substrates by reactive direct current (DC) magnetron sputtering using a target consisting of equal segments of titanium and aluminum. X-ray diffraction (XRD) analysis showed that the TiAlN phase had preferred orientations along 111 and 200 with the face-centered cubic structure. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) analyses indicated that the films were uniform and compact. Photoluminescence (PL) spectra reveal that TiAlN thin films are of good optical quality. Laser Raman studies revealed the presence of characteristic peaks of TiAlN at 312.5, 675, and 1187.5 cm,1. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of Platinum and Ruthenium Incorporation on Voltammetric Behavior of Nitrogen Doped Diamond-Like Carbon Thin FilmsELECTROANALYSIS, Issue 23 2009W. Khun Abstract Nitrogen doped diamond-like carbon thin films with or without platinum and ruthenium incorporation (N-DLC or PtRuN-DLC) were deposited on highly conductive p-Si substrates by DC magnetron sputtering to study the effect of Pt and Ru doping on the voltammetric performance of the N-DLC films. The potential windows of these film electrodes were measured in different electrolytic solutions, such as H2SO4, HCl and KCl. The cyclic voltammograms obtained from the N-DLC film electrodes in these solutions showed wide potential windows while the introduction of Pt and Ru into the film electrodes apparently narrowed down the potential windows due to their catalytic activities. [source] Low-Temperature Superionic Conductivity in Strained Yttria-Stabilized ZirconiaADVANCED FUNCTIONAL MATERIALS, Issue 13 2010Michael Sillassen Abstract Very high lateral ionic conductivities in epitaxial cubic yttria-stabilized zirconia (YSZ) synthesized on single-crystal SrTiO3 and MgO substrates by reactive direct current magnetron sputtering are reported. Superionic conductivities (i.e., ionic conductivities of the order ,1 ,,1cm,1) are observed at 500,°C for 58-nm-thick films on MgO. The results indicate a superposition of two parallel contributions , one due to bulk conductivity and one attributable to conduction along the film,substrate interface. Interfacial effects dominate the conductivity at low temperatures (<350,°C), showing more than three orders of magnitude enhancement compared to bulk YSZ. At higher temperatures, a more bulk-like conductivity is observed. The films have a negligible grain-boundary network, thus ruling out grain boundaries as a pathway for ionic conduction. The observed enhancement in lateral ionic conductivity is caused by a combination of misfit dislocation density and elastic strain in the interface. These very high ionic conductivities in the temperature range 150,500,°C are of great fundamental importance but may also be technologically relevant for low-temperature applications. [source] TEM Analysis of Hcp-Co Films Deposited by Gas Flow SputteringIEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, Issue 4 2008Hiroshi Sakuma Member Abstract In this study, the crystal structure of Co thin films deposited by a low-energy sputtering, gas flow sputtering (GFS) and conventional RF magnetron sputtering (MS) is investigated. The emphasis is on whether fcc-like regions are present in a hcp-Co film. X-ray diffraction (XRD) shows no fcc peak for both films deposited by GFS and MS. Electron diffraction reveals that fcc structure is present in the film deposited by MS. Lattice images are observed by using transmission electron microscopy. Every other line in the lattice image of the film deposited by GFS is bright or dark, which is suggestive of the ABAB stacking of the hcp structure. In addition, stacking faults are observed. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. [source] Tribology,Structure Relationships in Silicon Oxycarbide Thin FilmsINTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, Issue 5 2010Joseph V. Ryan Silicon oxycarbide is a versatile material system that is attractive for many applications because of its ability to tune properties such as chemical compatibility, refractive index, electrical conductivity, and optical band gap through changes in composition. One particularly intriguing application lies in the production of biocompatible coatings with good mechanical properties. In this paper, we report on the wide range of mechanical and tribological property values exhibited by silicon oxycarbide thin films deposited by reactive radio frequency magnetron sputtering. Through a change in oxygen partial pressure in the sputtering plasma, the composition of the films was controlled to produce relatively pure SiO2, carbon-doped SiC, and compositions between these limits. Hardness values were 8,20 GPa over this range and the elastic modulus was measured to be between 60 and 220 GPa. We call attention to the fit of the mechanical data to a simple additive bond-mixture model for property prediction. Tribological parameters were measured using a ball-on-disk apparatus and the samples exhibited the same general trends for friction coefficient and wear rate. One film is shown to produce variable low friction behavior and low wear rate, which suggests a solid-state self-lubrication process because of heterogeneity on the nanometer scale. [source] Surface morphology of sputtered Ta2O5 thin films on Si substrates from X-ray reflectivity at a fixed angleJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 2 2008Hsin-Yi Lee The temporal variation of the surface morphology of Ta2O5 films on Si substrates has been measured using X-ray reflectivity at a fixed angle during radio-frequency magnetron sputtering. During an early stage of growth of polycrystalline Ta2O5, the variation of surface roughness revealed a morphology of island nucleation and island coalescence. For a thickness greater than 7,nm, the surface roughness increased, to more than 2,nm at a thickness of 80,nm. For crystalline Ta2O5 films, the density of sputtered Ta2O5 films increased and attained the bulk value for a film only at a thickness greater than 80,nm. For an amorphous sputtered film, the surface was less rough and the density was less than that for a crystalline film. [source] Mechanical Properties of Sputter-Deposited Titanium-Silicon-Carbon FilmsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 3 2001James E. Krzanowski The effect of SiC additions on the mechanical properties of TiC films was investigated. Ti-Si-C films with varying SiC content were deposited using dual-cathode radio-frequency magnetron sputtering. The nanoindentation hardness of these films increased with SiC content to a maximum of 20,22 GPa for films in the range of 15,30 at.% SiC. The elastic modulus was also measured, and the hardness to modulus ratio (H/E) increased with SiC content, indicating that hardness increases were due to microstructural effects. The residual stress was measured in several films, but was low in magnitude, indicating that hardness measurements were not influenced by residual stress. TEM examination of several films revealed that the SiC additions altered the film microstructure in a manner that could account for the observed hardness increases. [source] The wet corrosion of molybdenum thin film , Part III: The effect of Ti and NbMATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 5 2006C. R. Tomachuk Abstract Magnetron sputtering has become the process of choice for the deposition of a wide range of industrially important coatings. Over the last decade, interest in molybdenum thin films prepared by magnetron sputtering has been increasing; however, little research has been done on molybdenum-titanium and molybdenum-niobium alloy thin films. During the current study, electrochemical impedance spectroscopy (EIS) was employed to investigate the effect on the corrosion resistance in basic chloride environments of adding titanium and niobium species to molybdenum thin films deposited by physical vapor deposition. The results indicate that the MoTi alloy thin films exhibit better protective properties than either the molybdenum-niobium alloy or unalloyed molybdenum thin films. [source] The wet corrosion of molybdenum thin film , Part II: Behavior at 85°CMATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 9 2004C. R. Tomachuk Abstract In the past few years there has been increased interest in molybdenum thin films, which are commonly prepared by magnetron sputtering. There is a variety of novel applications of molybdenum such as, for example, components for soft X-ray optics based on Mo/Si multi-layers, the back contact in thin film solar cells, NO gas detection, and microelectronics. Molybdenum is, also, widely used as an alloying addition in stainless steels to facilitate the formation of the passive film and to improve resistance to pitting attack. Its corrosion behaviour is complex and many aspects still need to be clarified. During this study, the corrosion behaviour of the PVD-Mo thin film immersed in aerated sulfate and chloride solutions at 85°C was investigated with both polarization and electrochemical impedance spectroscopy (EIS) measurements. It is apparent that the Mo thin film exhibits increased susceptibility to corrosion in more alkaline environments. [source] Structural evolution of ZnO films deposited by rf magnetron sputtering on glass substratePHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2010Yan-Ping Liao Abstract Influences of O2/Ar flux ratio (R) on surface morphology and structural evolution have been studied in the case of ZnO films deposited on glass substrates by radio-frequency (rf) magnetron sputtering. Results of atomic force microscopy (AFM), X-ray diffraction, and X-ray photoelectron spectroscopy (XPS) clearly indicate that the surface root-mean-square (rms) roughness, crystallinity, stress, and defects strongly depend on the R. At R,=,1/2, the crystallized ZnO film with highly c -axis orientation and highly smooth surface has been obtained. The implication of these results is that a moderate R is needed to realize high-quality ZnO film. [source] ZnO-based photodetector with internal photocurrent gainPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2010L. A. Kosyachenko Abstract The photoresponsive structures prepared by magnetron sputtering of ZnO on p-Si substrates followed by vacuum evaporation of semitransparent Ni film on ZnO surface are investigated. The obtained Ni/n-ZnO/p-Si structures show high sensitivity that sharply increases with increase in applied voltage. Under a bias voltage of 5,V, the responsivities at ,,=,390,nm and ,,=,850,nm were equal to 210 and 110,A/W, which correspond to quantum efficiencies of 655 and 165, respectively. It is assumed that the observed strong response is attributed to internal gain in the Ni/n-ZnO/p-Si phototransistor structure containing Ni/n-ZnO Schottky contact as the emitter junction and n-ZnO/p-Si heterostructure as the collector junction. The response time of the device is ,10,7,s. Alternative mechanisms of photocurrent multiplication in such structures are also discussed. [source] Effects of uniaxial stress on the magnetic properties of thin films and GMR sensors prepared on polyimide substratesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008Berkem Özkaya Abstract The effects of externally applied uniaxial stress on the magnetic properties of Co thin films and pseudo-spin-valve (PSV) structures on flexible polyimide substrates were investigated. The advantage of the polyimide substrate is its flexibility and high elasticity (,1%), which cannot be achieved using conventional crystalline substrates. The Co layers exhibit a macroscopic easy axis induced by the preparation process. When the stress is applied perpendicular to the induced in-plane easy axis, the magnetic domains in the film rotate towards the applied stress direction, which was confirmed using Kerr microscopy and magneto-optical Kerr effect (MOKE) magnetometer measurements. A Co/Cu/Ni PSV system was prepared on polyimide substrate with dc magnetron sputtering. Applying uniaxial stress leads to opposite rotation of the magnetisation directions in both layers to each other due to different signs of the magnetostriction coefficients of Co and Ni. The magnetisation and giant magnetoresistance (GMR) curves under applied stress were recorded using in situ MOKE and current in-plane four-point probe techniques, respectively. When the stress is applied perpendicular to the external magnetic field (Hext), the operating range of the GMR sensor increases, whereas the sensitivity decreases. Anisotropy energies and saturation magnetostriction values of the Co and Ni layer were determined by fitting the GMR and magnetisation curves using a micromagnetic model. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputteringPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008P. Marie Abstract Undoped and Neodymium-doped gallium oxide (Ga2O3) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post-annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10,4. These films were successfully doped with Neodymium by a co-sputtering method. The photoluminescence experiments for the Nd-doped ,-Ga2O3 films clearly showed the rare-earth emitting signature. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of annealing temperature on the electrical transport properties of CaRuO3,, thin films directly deposited on the Si substratePHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2007Hanjong Paik Abstract We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO3,, (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 °C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru4+/Ca2+ ion were responsible for the transport properties of CRO thin film. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cellsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2007K. Golaszewska Abstract In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO4 used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO4 were formed in a reactive process in Ar,O2 atmosphere, from Cd and Ru1Si1 targets, respectively. ZnO films were deposited directly from ZnO target by rf sputtering. We have shown that application of CdO, ZnO and RuSiO4 transparent films instead of conventional metal-based contacts enables to improve of photodiode properties. As a result, GaSb/InGaAsSb/AlGaAsSb photodiodes with detectivity D * increased by factor of 2 and reduced by factor of 3 the series resistance were obtained. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Reactive magnetron sputtering of highly (001)-textured WS2,x films: Influence of Ne+, Ar+ and Xe+ ion bombardment on the film growthPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2006K. Ellmer Abstract Layer-type van der Waals semiconductor WS2,x films were grown by radio frequency reactive magnetron sputtering from a metallic tungsten target onto oxidized silicon substrates. The sputtering atmosphere consisted of 75% hydrogen sulfide and 25% neon, argon or xenon. The substrate voltage and hence the energy of the ions bombarding the growing film, was varied from about 20 V (floating potential) to ,80 V. By in situ energy-dispersive X-ray diffraction the growth of the films was monitored and by elastic recoil detection analysis the film composition was measured. It was found that with xenon in the sputtering atmosphere a substrate voltage of ,20 V is sufficient to suppress the crystalline film growth, while for argon as the sputtering rare gas this occurs only at ,80 V. The disturbed film growth is accompanied by a sulfur loss of the growing WS2,x films down to x = 1.1 for sputtering in Ar + H2S at a substrate potential of ,60 V. The results are tentatively explained by the different momentum transfers to sulfur atoms, which is highest for argon ions. It has also to be taken into account that the low-energy xenon bombardment is a many-body cascade process with a much higher local energy density compared to argon and neon bombardment and leading to a higher defect density and a supression of the crystalline growth. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Highly (001)-textured WS2,x films prepared by reactive radio frequency magnetron sputteringPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 14 2004K. Ellmer Abstract Highly (001)-oriented WS2,x films were grown onto oxidized silicon substrates by reactive magnetron sputtering from a metallic tungsten target in argon-hydrogen sulfide mixtures. The best films with respect to the van-der-Waals orientation, i.e. with the (001) planes parallel to the substrate surface, were grown by excitation of the plasma with radio frequency of 27.12 MHz. These films exhibit the largest grains and the lowest film strain. It is shown that this effect is not due to the lower deposition rate at this high excitation frequency. Instead it was found that the lower DC voltage at the sputtering target is advantageous for the film growth since the bombardment of the growing film by highly energetic particles is avoided by this type of plasma excitation. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Composition and formation mechanism of zirconium oxynitride films produced by reactive direct current magnetron sputteringPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2004J. M. Ngaruiya Abstract Direct current magnetron sputtered zirconium oxynitride films show an improvement in both deposition rate and physical properties compared to zirconium oxide. Here we seek to understand these beneficial effects and report on the film composition and crystallographic structure. Based on a thermochemical description together with a modeling of formation kinetics we propose a film formation mechanism, which explains many of the observations. Rutherford backscattering spectroscopy (RBS) shows early nitrogen incorporation at 64% N2 flow in disagreement with the predictions of thermochemistry. The stoichiometry is only successfully simulated with the use of an expanded Berg,Larsson model with a low replacement coefficient of about 0.1 of nitrogen by oxygen after metal-nitrogen bond formation. The deviation from complete replacement as predicted by thermodynamics illustrates the importance of kinetics in film formation. The model further successfully predicts the variation of the mass deposition rate. The X-ray diffraction analyses suggest that, within the crystalline phase, nitrogen atoms occupy oxygen sites, resulting in an unchanged zirconium oxide structure. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||||||||||||||||||||