Home About us Contact
|
Home About us Contact | ||
|
|
||
Magnetoresistance
Kinds of Magnetoresistance Terms modified by Magnetoresistance Selected AbstractsCo2MnSi as full Heusler alloy ferromagnetic electrode in magnetic tunneling junctionsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2006G. Reiss Abstract The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grünberg, the Giant MagnetoResistance by Fert and Grünberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. In order to obtain large magnetoresistance effects, materials with strongly spin polarized electron gas around the Fermi level have to be found. New materials with potentially 100% spin polarization will be discussed using the example of the full Heusler compound Co2MnSi. First, experimental aspects of the integration of this alloy in magnetic tunneling junctions will be addressed. With these junctions, we obtain up to 100% TMR at low temperature. The current status of this research will then be summarized with special regard to the complex diffusion mechanisms occurring in these devices and to the properties of the interfaces between the Heusler material and the insulator. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High-Pressure Torsion for Giant Magnetoresistance and Better Magnetic Properties,ADVANCED ENGINEERING MATERIALS, Issue 8 2010Shingo Nishihata High-pressure torsion (HPT) was conducted on Cu alloys containing ferromagnetic Co and Fe particles. Electron probe microanalysis, X-ray diffraction analysis, and transmission electron microscopy confirmed that the particles were significantly refined through fragmentation and some fractions were dissolved into the Cu matrix with straining by HPT. Saturation magnetization decreases with straining and coercive force increases with straining but they level off after intense straining. Magnetoresistance with an isotropic feature corresponding to giant magnetoresistance (GMR) appears at room temperature by processing with HPT. It is demonstrated that HPT is a potential process for controlling magnetic properties such as saturation magnetization and coercive force and also for creating GMR in the alloys prepared by conventional ingot metallurgy. [source] Colossal Electroresistance and Giant Magnetoresistance in Doped PbPdO2 Thin FilmsADVANCED MATERIALS, Issue 21 2009Xiaolin Wang Observations on colossal electroresistance (ER) and giant magnetoresistance in doped PbPdO2, one of the candidates of a new class of materials, spin gap-less semiconductors, are reported. The resistivity is strongly suppressed by electrical current below a metal-insulator transition with the ER values of up to 107, which is much greater than that achieved in colossal magnetoresistance materials. [source] Reversible Low-Field Magnetoresistance in Sr2Fe2,xMoxO6,, by Oxygen Cycling and the Role of Excess Mo (x,>,1) in Grain-Boundary RegionsADVANCED MATERIALS, Issue 7 2006L. MacManus-Driscoll Oxygen cycling of Sr2Fe2,xMoxO6,, (SFMO) samples allows the resistivity and low-field magnetoresistance (LFMR) to be precisely cycled. TEM shows that the change in resistivity with oxygen is not only a consequence of the change in oxygen stoichiometry of SFMO, but also a concomitant change in the Fe/Mo ratio in SFMO. The figure shows the change in MR and resistivity (values in m,,cm above the data points for samples D1,D7) with increasing post-annealing time. [source] Magnetoresistance, transport noise and granular structure in polycrystalline superconductorsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2007I. García-Fornaris Abstract In this work we present a theoretical study on the magnetic field dependence of the electrical resistance R (Ba) and the transport noise (TN) in a high- Tc polycrystalline superconductors. In the model, we have considered the ceramic superconductor as a series-parallel array of Josephson devices and the intergranular magnetic field is described within the framework of the intragranular flux-trapping model. The obtained results qualitatively reproduce the hysteretic behavior of the R (Ba) dependence in increasing and decreasing applied magnetic fields. We have found that the hysteretic behavior in the R (Ba) dependence changes appreciably if different statistical distributions of the geometric factors of grains are used. In addition, such changes are also reflected in the TN, which is produced by the electric current rearrangement in the array with increasing applied magnetic fields. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Growth of Co/Cu multilayered thin films by electro-depositionPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2004Y. Hayashi Abstract Electrochemical method has been applied for preparing Co/Cu multilayered thin films. The layers were electrodeposited after injecting Co and Cu containing solutions in a flow exchanged supporting electrolyte solution. In X-ray diffraction at low angle range a long period peak could be observed, and in the middle angle region a single broad peak showing an average lattice spacing of the film was observed. The electrical resistance showed the properties of Giant Magnetoresistance (GMR). The GMR ratio showed a variation against Cu layer thickness as expected for anti-ferromagnetically coupled films. The maximum GMR ratio obtained in this study was 6.2% at room temperature for the film of [Co 2.0 nm/Cu 1.0 nm]15. Though we need further studies for choosing suitable deposition conditions, the electrodeposition method is a promising method for producing multilayered thin films. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fieldsANNALEN DER PHYSIK, Issue 12 2009I.L. Drichko Abstract We report the results of an experimental study of the magnetoresistance ,xx and ,xy in two samples of p-Si/SiGe with low carrier concentrations p = 8.2 × 1010 cm -2 and p = 2 × 1011 cm -2. The research was performed in the temperature range of 0.3,2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of ,xx and ,xy in the tilted magnetic field showed that the anomaly in ,xx, observed at filling factor , = 3/2 is practically nonexistent in the conductivity ,xx. The anomaly in ,xx at , = 2 might be explained by overlapping of the levels with different spins 0 , and 1 , when the tilt angle of the applied magnetic field is changed. The dependence of g-factor g*(,)/g*(00) on the tilt angle , was determined. [source] Large Magnetoresistance, Structure and Magnetic Properties of the Double Perovskite LaKFe1.2Mo0.8O6 Compound.CHEMINFORM, Issue 14 2007Guoyan Huo Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF. [source] Large Magnetoresistance in a Ferromagnetic Cobalite: The 12H Ba0.9CoO2.6.CHEMINFORM, Issue 38 2006A. Maignan Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF. [source] Magnetic Properties and Magnetoresistance of GdCrSb3.CHEMINFORM, Issue 46 2003Laura Deakin Abstract For Abstract see ChemInform Abstract in Full Text. [source] ChemInform Abstract: Large Intragrain Magnetoresistance in the Double Perovskite BaLaMnMoO6.CHEMINFORM, Issue 32 2002Siwen Li Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] ChemInform Abstract: Chemically Induced Magnetism and Magnetoresistance in La0.8Sr1.2Mn0.6Rh0.4O4 .CHEMINFORM, Issue 46 2001Peter D. Battle Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] Positive magnetoresistance in TixW1-xSe2 (x = 0, 0.03) platelet crystalsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2006Sunil Kunjachan Abstract Layered transition metal dichalcogenide crystal, WSe2, has been grown by direct vapour transport technique. Titanium is used as a dopant in to the 2H type MX2 matrix. These crystals show positive magnetoresistance and a switching behaviour is observed at room temperature in the titanium-intercalated sample. The relative resistance change due to magnetic field for the doped sample is found to switch from 23.6% to 39.6% when the sample is rotated through 0° to 90°. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High-Pressure Torsion for Giant Magnetoresistance and Better Magnetic Properties,ADVANCED ENGINEERING MATERIALS, Issue 8 2010Shingo Nishihata High-pressure torsion (HPT) was conducted on Cu alloys containing ferromagnetic Co and Fe particles. Electron probe microanalysis, X-ray diffraction analysis, and transmission electron microscopy confirmed that the particles were significantly refined through fragmentation and some fractions were dissolved into the Cu matrix with straining by HPT. Saturation magnetization decreases with straining and coercive force increases with straining but they level off after intense straining. Magnetoresistance with an isotropic feature corresponding to giant magnetoresistance (GMR) appears at room temperature by processing with HPT. It is demonstrated that HPT is a potential process for controlling magnetic properties such as saturation magnetization and coercive force and also for creating GMR in the alloys prepared by conventional ingot metallurgy. [source] Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide HeterostructuresADVANCED FUNCTIONAL MATERIALS, Issue 15 2010Michael Hambe Abstract Experimental results on entirely complex oxide ferromagnetic/ferroelectric/ferromagnetic tunnel junctions are presented in which the tunneling magnetoresistance is modified by applying low electric field pulses to the junctions. The experiments indicate that ionic displacements associated with the polarization reversal in the ferroelectric barrier affect the complex band structure at ferromagnetic,ferroelectric interfaces. The results are discussed in the framework of the theoretically predicted magnetoelectric interface effect and may lead to novel multistate memory devices. [source] Novel Multifunctional Properties Induced by Interface Effects in Perovskite Oxide HeterostructuresADVANCED MATERIALS, Issue 45 2009Kui-juan Jin Abstract Multilayer structures have emerged as a leading research topic and researchers expect that multilayers may lead to interesting artificial materials with novel properties. In this Research News we show that the introduction of interfaces into perovskite oxides can induce a series of novel properties including an unusual positive magnetoresistance, great enhancement of lateral photovoltage in La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3, and an electrical modulation of the magnetoresistance in multi-p-n heterostructures of SrTiO3,,/La0.9Sr0.1MnO3/SrTiO3,,/La0.9Sr0.1MnO3/Si. This novel positive magnetoresistance is attributed to the creation of a space charge region at the interface where the spin of the carriers is anti-parallel to that of the carriers in the region far from the interface of manganese oxide in the heterostructures. [source] Colossal Electroresistance and Giant Magnetoresistance in Doped PbPdO2 Thin FilmsADVANCED MATERIALS, Issue 21 2009Xiaolin Wang Observations on colossal electroresistance (ER) and giant magnetoresistance in doped PbPdO2, one of the candidates of a new class of materials, spin gap-less semiconductors, are reported. The resistivity is strongly suppressed by electrical current below a metal-insulator transition with the ER values of up to 107, which is much greater than that achieved in colossal magnetoresistance materials. [source] Application of Nanostructured ASP Precursors for Processing CaCuMn6O12 Colossal Magnetoresistance CeramicsINTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, Issue 4 2006Anastasia E. Chekanova Nanostructured precursors prepared by ultrasonic aerosol spray pyrolisys at 750,950°C in air were applied for the first time to obtain Ca(Cu,Mn)7O12 colossal magnetoresistance ceramics with a unique submicron necked-grain microstructure. It was observed that a high contribution of intergrain tunneling magnetoresistance results in a 10,20% difference in functional properties as dependent on morphological features of hollow precursor microspheres ASP processed at a given temperature. [source] Reversible Low-Field Magnetoresistance in Sr2Fe2,xMoxO6,, by Oxygen Cycling and the Role of Excess Mo (x,>,1) in Grain-Boundary RegionsADVANCED MATERIALS, Issue 7 2006L. MacManus-Driscoll Oxygen cycling of Sr2Fe2,xMoxO6,, (SFMO) samples allows the resistivity and low-field magnetoresistance (LFMR) to be precisely cycled. TEM shows that the change in resistivity with oxygen is not only a consequence of the change in oxygen stoichiometry of SFMO, but also a concomitant change in the Fe/Mo ratio in SFMO. The figure shows the change in MR and resistivity (values in m,,cm above the data points for samples D1,D7) with increasing post-annealing time. [source] Foreword to the Special Issue on spectroscopic studies on colossal magnetoresistance, high-temperature superconductors and superlattice materialJOURNAL OF RAMAN SPECTROSCOPY, Issue 10 2001P. X. Zhang No abstract is available for this article. [source] Raman phonons and Raman Jahn,Teller bands in perovskite-like manganitesJOURNAL OF RAMAN SPECTROSCOPY, Issue 10 2001Milko N. Iliev The perovskite-like manganites R1,xAxMnO3, where R is a trivalent rare earth or Y and A is a divalent alkaline earth element, are characterized by a strong interplay of magnetism, electric transport and crystallographic distortion. At doping levels 0.15 < x < 0.45 the materials exhibit colossal magnetoresistance near the concomitant ferromagnetic and insulator,metal transitions. At a fractional doping level, such as x = 0.5, the crystallographic and magnetic environment is strongly modified and charge ordering between Mn3+ and Mn4+ or phase separation takes place. In this work, the polarized Raman spectra of the orthorhombic and rhombohedral phases of parent RMnO3 compound were analyzed in close comparison with results of lattice dynamic calculations. We argue that the strong high-wavenumber bands between 400 and 700 cm,1, which dominate the Raman spectra of rhombohedral RMnO3 and magnetoresistive La1,xAxMnO3 are not proper Raman modes for the R3c or Pnma structures. Rather, the bands are of phonon density-of-states origin and correspond to oxygen phonon branches activated by the non-coherent Jahn,Teller distortions of the Mn3+O6 octahedra. The reduction of these bands upon doping of La1,xAxMnO3 and their disappearance in the ferromagnetic metallic phase support the model. The variation with temperature of the Raman spectra of La0.5Ca0.5MnO3 is also discussed. The results give a strong indication for charge and orbital ordering and formation of superstructure at low temperatures. Copyright © 2001 John Wiley & Sons, Ltd. [source] Hysteretic magnetoresistance in polymeric diodesPHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 7-8 2009Sayani Majumdar Abstract We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time-dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground-state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effects of correlated disorder on the magneto-transport in colossal magnetoresistance manganitesPHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 4 2009M. Egilmez Abstract Monte-Carlo simulations predict that a local correlated disorder is responsible for many of the novel transport and magnetic properties of colossal magnetoresistance (CMR) materials such as manganites. One important prediction of these models is that the resistivity at the metal,insulator transition (MIT) in manganites depends strongly on the correlated quenched disorder. However, experimental confirmation has been challenging since it is difficult to control the amount of disorder in these compounds. We carried out experiments on Sm0.55Sr0.45MnO3, a prototypical CMR manganite with a sharp MIT, whereby the oxygen-related disorder is systematically enhanced by low temperature thermal activation. We observe dramatic changes in the temperature dependence of resistivity at the MIT as the amount of quenched disorder is increased, occurring in a manner that is in agreement with theoretical predictions. Temperature dependence of resistivity of Sm0.55Sr0.45MnO3 for different annealing times at 350 °C in vacuum. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] A comparative study of La0.67Ca0.33MnO3 composites with different secondary phasesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2009Guang Ming Ren Abstract Two kinds of composites with the nominal composition of (1 , x)La0.67Ca0.33MnO3 (LCMO)/x MgO and (1 , x)LCMO/ x SrO were investigated. Different electrical and magnetic transport properties were observed between the two kinds of composites. For the LCMO/MgO composites, the insulator,metal transition temperature (Tp) decreases rapidly with the increase of MgO content and a remarkably enhanced magnetoresistance (MR) peak is observed near Tp. However, for the LCMO/SrO composites, the SrO content has little effect on Tp and the low-field MR is enhanced over almost the whole temperature range. Moreover, a two-step magnetization behavior was observed in the LCMO/MgO composites. By calculating in terms of a ferromagnetic grain coupling model, we attribute this difference to the different effects of the secondary phases on the ferromagnetic coupling between the neighboring LCMO grains, which results from the formation of the different interfacial phases at the grain boundary in the two kinds of composites. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effects of uniaxial stress on the magnetic properties of thin films and GMR sensors prepared on polyimide substratesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008Berkem Özkaya Abstract The effects of externally applied uniaxial stress on the magnetic properties of Co thin films and pseudo-spin-valve (PSV) structures on flexible polyimide substrates were investigated. The advantage of the polyimide substrate is its flexibility and high elasticity (,1%), which cannot be achieved using conventional crystalline substrates. The Co layers exhibit a macroscopic easy axis induced by the preparation process. When the stress is applied perpendicular to the induced in-plane easy axis, the magnetic domains in the film rotate towards the applied stress direction, which was confirmed using Kerr microscopy and magneto-optical Kerr effect (MOKE) magnetometer measurements. A Co/Cu/Ni PSV system was prepared on polyimide substrate with dc magnetron sputtering. Applying uniaxial stress leads to opposite rotation of the magnetisation directions in both layers to each other due to different signs of the magnetostriction coefficients of Co and Ni. The magnetisation and giant magnetoresistance (GMR) curves under applied stress were recorded using in situ MOKE and current in-plane four-point probe techniques, respectively. When the stress is applied perpendicular to the external magnetic field (Hext), the operating range of the GMR sensor increases, whereas the sensitivity decreases. Anisotropy energies and saturation magnetostriction values of the Co and Ni layer were determined by fitting the GMR and magnetisation curves using a micromagnetic model. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Inverse giant magnetoresistance due to spin-dependent bulk scattering in Fe1,xCrx/Cu/CoPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 12 2007Ngoc Anh Nguyen Thi Abstract Inverse giant magnetoresistance (IGMR) can be observed in multilayers with alternating two ferromagnetic layers F1 and F2 possessing opposite spin scattering asymmetries. We report here the observation of inverse current-in-plane giant magnetoresistance (CIP-IGMR) in Fe1,xCrx/Cu/Co spin-valve systems with varying Cr concentration and FeCr-layer thickness. The highest magnitude of IGMR, ,0.45%, has been achieved in the sample doped with 35 at.% Cr. It is shown that the proper substitution of Cr for Fe can alter spin-dependent scattering in the Fe layer, causing the inversion of the bulk spin scattering asymmetry coefficient therefore resulting in CIP-IGMR. The GMR has a dominant contribution to the observed inverse MR, rather than the anisotropic magnetoresistance (AMR) component. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Magneto-transport studies of single ferromagnetic nanowirePHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 12 2007Y. Rheem Abstract The magnetotransport properites of individual ferromagnetic nanowires (e.g. Ni, Co23Ni77, Ni85Fe15) with 200 nm diameters were investigated. The ferromagnetic nanowires were successfully electrodeposited within an anodized alumina by controlling solution composition, temperature, and current density. Using a magnetic assembly technique, single nanowire was successfully bridged across microfabricated gold elecrodes. The temperature coefficient of resistance for ferromagnetic nanowires was lower than the bulk because of a larger residual resistance from increased electrical scattering in one-dimensional structures. The ferromagnetic nanowires showed typical anisotropic magnetoresistance where the magnetoresistance ratio was lower than bulk values. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Preparation and conversion electron Mössbauer study of Fe3O4/,-Fe2O3 composite filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 15 2006Z. P. Niu Abstract Fe3O4 and Fe3O4/,-Fe2O3 composite films have been prepared from a sintered Fe2O3 target, using an rf magnetron sputtering apparatus with various argon pressures. The phase and magnetic properties of the samples have been characterized by X-ray-diffraction (XRD) measurements, conversion electron Mössbauer spectroscopy (CEMS), and a vibrating sample magnetometer (VSM). With the increasing argon pressure during sputtering, the increase of the average center shift of Mössbauer lines indicates the decreasing valency state of Fe ions induced by the enhancement of presumed oxygen loss. An enhanced magnetoresistance (MR) has been found in the Fe3O4/,-Fe2O3 composite film that was prepared under an Ar pressure of 1.0 Pa. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Transport through (Ga,Mn)As nanoconstrictionsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 14 2006Markus Schlapps Abstract We investigate magnetoresistance effects for transport across (Ga,Mn)As nanoislands, detached by nanoconstrictions from wider (Ga,Mn)As input leads. As in previous studies a huge magnetoresistance was found for nanoconstrictions in the tunnelling regime. For slightly wider junctions an enhanced anisotropic magnetoresistance effect was observed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Nanoparticle morphology in FeCo,Al2O3 granular films with tunneling giant magnetoresistancePHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2006Changzheng Wang Abstract A series of FeCo,Al2O3 granular films were prepared by a magnetron-controlled sputtering system. The tunneling giant magnetoresistance and nanoparticle morphology of FeCo particles in FeCo,Al2O3 granular films were directly determined utilizing a conventional four-probe method and TEM (HRTEM) observation, respectively. The results indicated that the tunneling giant magnetoresistance can reach a maximum of 6.9% at about 32.8 vol% FeCo particles, so far the highest value reported at room temperature and under an applied field of 12.5 kOe. Meanwhile, the sensitivity of TMR also reaches a maximum at about 32.8 vol% FeCo particles. In addition, TEM and HRTEM observation disclosed that FeCo,Al2O3 films consist of FeCo nanoparticles with bcc structure or amorphous FeCo phase dispersed in amorphous or crystalline Al2O3 matrix. For films with lower volume fraction of FeCo particles, the size distribution of FeCo particles satisfied a log-normal function. With increasing volume fraction of FeCo particles, the size distribution of FeCo particles deviated gradually from a log-normal function. Meanwhile, the average size of FeCo particles increased monotonically with increasing volume fraction of FeCo particles, leading to the fact that TMR can reach a peak value at a certain middle particle size. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||||||||||||||||||||