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MBE Growth (mbe + growth)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Critical diameters and temperature domains for MBE growth of III,V nanowires on lattice mismatched substrates

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 4 2009
G. E. Cirlin
Abstract We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au-assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation-free III,V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

MBE growth of InAsN on (100) InAs substrates

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2005
V. Sallet
Abstract The growth of InAsN on (100) InAs substrates by molecular beam epitaxy is investigated. The incorporation of nitrogen in the alloy is compared with the case of GaAsN grown on GaAs. Under the same conditions, lower nitrogen contents are systematically measured in InAsN. In both cases, nitrogen incorporation was found to be enhanced with the decrease of the arsenic flux supplied to the surface, whereas the nitrogen concentrations measured in InAsN and GaAsN as a function of the growth temperature follow opposite tendencies. For GaAsN, the N content slightly increases as the growth temperature raises from 360 °C to 460 °C. On the contrary, for InAsN alloys, no significant amount of N is observed over the range 420,460 °C and a decrease of the growth temperature down to 370 °C is required to incorporate 1% of nitrogen in InAsN. The comparison of formation enthalpies of binary constituents enables to understand these behaviours. A following discussion addresses the local environment of N atoms in GaInAsN materials. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

MBE growth and magneto-optical properties of ZnCdSe-ZnMnSe wire systems

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009
Takashi Matsumoto
Abstract Zn0.91Cd0.09Se/Zn0.88Mn0.12Se wire array embedded in a ZnSe barrier layer has been grown on GaAs vicinal substrate by MBE under step-flow growth condition, and polarized photoluminescence (PL) and reflectance spectra have been measured in external magnetic field in the Voigt geometry with magnetic field parallel and perpendicular to the wire. The sample shows strong luminescence due to exciton recombination in the Zn0.91Cd0.09Se QWRs. Zeeman shift of the luminescence is anisotropic, that is, the energy shift depends on the direction of the magnetic field and the direction of electric field of emitted light. In reflectance spectra two dips are observed. One is active to the light polarized perpendicular to the magnetic field and the other is active to the light parallel to the magnetic field. The effect of energy separation between the two dips on the PL polarization is studied, and relative contribution of the heavy- and light-hole component to the hole states responsible for the two transitions is discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
A. R. Arehart
Abstract The use of rf-plasma and ammonia nitrogen sources for growth of GaN films by molecular beam epitaxy (MBE) are compared in terms of defect incorporation using deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS). To better improve the understanding of ammonia-based MBE growth of GaN and potential defect sources as opposed to the more studied plasma source-based MBE-grown material several V/III ratios were also investigated, which were generated via systematic adjustment of the ammonia flow rates during growth. The DLOS spectra, comparing deep traps within the n-GaN grown using N-plasma and ammonia sources, reveal the presence of the same deep levels due to background carbon and gallium vacancies, with energy levels at EC -3.28, EC -2.62, and EC -1.28. The DLTS results of the N-plasma and ammonia-based MBE samples show two similarly dominant electron traps at EC -0.60, and EC -0.24 in each sample. Measurements made as a function of V/III flux ratio for ammonia-based MBE growth indicate a large dependence of the EC -0.24 eV trap concentration on growth flux ratio, which is significant for guiding continued optimization of this promising MBE growth method for GaN devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

(ZnSe/MgS)/ZnCdSe DBRs grown by molecular beam epitaxy using ZnS as a sulphur source

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2006
S. V. Sorokin
Abstract MBE growth and study of optical and structural properties of (ZnSe/MgS)/ZnCdSe distributed Bragg reflectors with , = 520 nm and Rmax = 97% are presented. The samples were grown pseudomorphically on GaAs (001) substrate using ZnS as a sulphur source. The details of MBE growth of such structures are discussed. Scanning electron microscopy, X-ray diffraction and optical measurements demonstrate good optical and structural characteristics of the Bragg reflectors. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]