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Low Temperature Growth (low + temperature_growth)

Distribution by Scientific Domains
Physics and Astronomy75%

Selected Abstracts

Low Temperature Growth of Photoactive Titania by Atmospheric Pressure Plasma

PLASMA PROCESSES AND POLYMERS, Issue 9 2009
John L. Hodgkinson
Abstract Atmospheric pressure glow discharge plasma CVD was used to deposit thin films of titania at 200,°C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275,°C produced crystalline films that were photocatalytically active. When annealed at 300,°C the photoactivity was greater than that of commercially available "self-cleaning" titania films. The effects of the different precursors, annealing times and temperatures on the crystallinity and photoactivity are discussed. [source]

Low temperature growth of transparent conducting ZnO films by plasma assisted deposition

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006
A. Nishii
Abstract Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 , 300 °C using metallic Zn, metallic Ga and plasma-excited oxygen as source materials. Deposited films were characterized by X-ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm-thick Ga-doped ZnO films deposited at 290 °C showed low resistivity (,2 × 10,4 , cm) and high transmittance in the visible region (,85%). (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Properties of Ga2O3 -based (Inx Ga1,x)2O3 alloy thin films grown by molecular beam epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008
Takayoshi Oshima
Abstract A series of Ga2O3 -based (Inx Ga1,x)2O3 alloy thin films have been grown on c-plane sapphire substrates with a thin Ga2O3 buffer layer by plasma-assisted molecular beam epitaxy. At growth temperatures of 700 °C and higher, even with a slight inclusion of In2O3 to Ga2O3, for example, the film of (In0.08Ga0.92)2O3, exhibited a rough surface and degraded transmission spectrum resulting from phase separation of In2O3. Due to low temperature growth at 600 °C, however, the phase separation was suppressed for the In composition up to 35%, which was confirmed by X-ray diffraction measurement, and the films exhibited high transmittance over 85% with sharp absorption edges. The bandgap could be tuned form 5.0 to 4.0 eV. The results encourage the application of (Inx Ga1,x)2O3 thin films in short-wavelength optical devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Growth and characterization of InCrN and (In,Ga,Cr)N

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
S. Kimura
Abstract InCrN and a new quaternary alloy (In,Ga,Cr)N were synthesized by molecular beam epitaxy. Their structural properties were studied with X-ray diffraction and X-ray absorption fine structure (XAFS). It was found that low temperature growth enables the growth of InCrN and (In,Ga,Cr)N with higher Cr contents, while they were not crystallized at higher substrate temperature (450 °C). XAFS studies suggest that Cr atoms substitute on cation sites and no trace of locally formed secondary phases, such as Cr cluster, CrN (NaCl type) and Cr2N, in the grown InCrN and (In,Ga,Cr)N layers. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]