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Low Frequency Noise (low + frequency_noise)
Selected AbstractsLow frequency noise in Co/Al2O3,Si,/Py magnetic tunnel junctionsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2008R. Guerrero Abstract Low frequency noise and dynamic tunneling resistance have been studied in Co(80 Å)/Al2O3(12 Å)/Py(100 Å) magnetic tunnel junctions (MTJs) with and without asymmetric Si doping of the insulating barrier (Si , 1.8 Å). Variation of the dynamic resistance and tunneling resistance with Si doping and applied bias in these MTJs indicate a transition from the Si-doped regime to Si cluster formation above a , -layer thickness of about 1.2 Å, close to 1 monolayer coverage. The measurements show anomalously strong enhancements of the low frequency noise for Si thickness above 1.2 Å, mainly due to the appearance of random telegraph noise. A simple model, which considers suppression of Coulomb blockade in the array of Si dots, opening two-step tunnel channels, qualitatively explains the variation of both conductivity and noise with Si content. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical and optical low frequency noises in multimodal vertical cavity surface emitting lasersLASER PHYSICS LETTERS, Issue 10 2006F. Principato Abstract Experimental investigations of the low frequency noise of multimode 780 nm vertical cavity surface emitting lasers are reported. Electrical noise, optical noise and their correlation have been measured in the frequency range 1 Hz,95 kHz. The results show that the main contribution to the electrical noise is located in the distributed Bragg reflector layers of the laser. The optical power and pump current noise sources are strongly correlated below and around the threshold, while are weakly correlated above threshold. It is argued that the noise in the optical power is due to both free injection carrier noise and optical gain fluctuations. (© 2006 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source] Low frequency noise in Co/Al2O3,Si,/Py magnetic tunnel junctionsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2008R. Guerrero Abstract Low frequency noise and dynamic tunneling resistance have been studied in Co(80 Å)/Al2O3(12 Å)/Py(100 Å) magnetic tunnel junctions (MTJs) with and without asymmetric Si doping of the insulating barrier (Si , 1.8 Å). Variation of the dynamic resistance and tunneling resistance with Si doping and applied bias in these MTJs indicate a transition from the Si-doped regime to Si cluster formation above a , -layer thickness of about 1.2 Å, close to 1 monolayer coverage. The measurements show anomalously strong enhancements of the low frequency noise for Si thickness above 1.2 Å, mainly due to the appearance of random telegraph noise. A simple model, which considers suppression of Coulomb blockade in the array of Si dots, opening two-step tunnel channels, qualitatively explains the variation of both conductivity and noise with Si content. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical and optical low frequency noises in multimodal vertical cavity surface emitting lasersLASER PHYSICS LETTERS, Issue 10 2006F. Principato Abstract Experimental investigations of the low frequency noise of multimode 780 nm vertical cavity surface emitting lasers are reported. Electrical noise, optical noise and their correlation have been measured in the frequency range 1 Hz,95 kHz. The results show that the main contribution to the electrical noise is located in the distributed Bragg reflector layers of the laser. The optical power and pump current noise sources are strongly correlated below and around the threshold, while are weakly correlated above threshold. It is argued that the noise in the optical power is due to both free injection carrier noise and optical gain fluctuations. (© 2006 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source] |