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Local Oxidation (local + oxidation)
Selected AbstractsForce Spectroscopic Investigations During the Local Oxidation of n -Octadecyltrichlorosilane Monolayers,ADVANCED FUNCTIONAL MATERIALS, Issue 1 2006S. Hoeppener Abstract Scanning force spectroscopy (SFS) is a powerful tool for investigating surface properties with high precision. Unlike most common spectroscopic techniques, information about local properties can also be obtained from surface areas with nanometer dimensions. This makes SFS a useful investigative tool for small lithographic structures. We apply the continuous recording of force curves to extract valuable information about the local oxidation of a monolayer of n -octadecyltrichlorosilane molecules self-assembled on silicon. The oxidation is carried out while simultaneously recording the force curves during the application of a bias voltage to the tip. The dynamics of the induced surface modifications and changes in the surface properties are followed by analyzing specific spots in the force curves. [source] A New Scenario in Probe Local Oxidation: Transient Pressure-Wave-Assisted Ionic Spreading and Oxide Pattern Formation,ADVANCED MATERIALS, Issue 18 2007N. Xie A new mechanism based on transient shock-wave-assisted lateral ionic spreading and oxide growth is reported for atomic force microscopy probe local oxidation (see figure). Transitory high pressure waves generated in the nanoscopic tip,sample junction significantly extend the distribution of hydroxyl oxidants to facilitate micrometer-scale disk-oxide growth on a silicon substrate. The results show that shock propagation may be a general phenomenon in AFM nanolithography. [source] Force Spectroscopic Investigations During the Local Oxidation of n -Octadecyltrichlorosilane Monolayers,ADVANCED FUNCTIONAL MATERIALS, Issue 1 2006S. Hoeppener Abstract Scanning force spectroscopy (SFS) is a powerful tool for investigating surface properties with high precision. Unlike most common spectroscopic techniques, information about local properties can also be obtained from surface areas with nanometer dimensions. This makes SFS a useful investigative tool for small lithographic structures. We apply the continuous recording of force curves to extract valuable information about the local oxidation of a monolayer of n -octadecyltrichlorosilane molecules self-assembled on silicon. The oxidation is carried out while simultaneously recording the force curves during the application of a bias voltage to the tip. The dynamics of the induced surface modifications and changes in the surface properties are followed by analyzing specific spots in the force curves. [source] Inorganic Materials and Ionic Liquids: Large-scale Nanopatterning of Single Proteins used as Carriers of Magnetic Nanoparticles (Adv. Mater.ADVANCED MATERIALS, Issue 5 20105/2010) Ricardo Garcia, Eugenio Coronado, and co-workers demonstrate on p. 588 large-scale patterning of single ferritin molecules by sequential (atomic force microscopy local oxidation) and parallel approaches (lithographically controlled wetting). The nanopattern size matches the size of the protein (,10 nm). Electrostatic interactions, capillary forces, surface functionalization, and nanolithography are used to achieve the desired protein organization. [source] Large-scale Nanopatterning of Single Proteins used as Carriers of Magnetic NanoparticlesADVANCED MATERIALS, Issue 5 2010Ramsés V. Martínez Patterning of single ferritin molecules by sequential (atomic force microscopy local oxidation) and parallel approaches (lithographically controlled wetting). The nanopattern size matches the size of the protein (,10 nm). Electrostatic interactions, capillary forces, surface functionalization, and nanolithography are used to achieve the desired protein organization. [source] A New Scenario in Probe Local Oxidation: Transient Pressure-Wave-Assisted Ionic Spreading and Oxide Pattern Formation,ADVANCED MATERIALS, Issue 18 2007N. Xie A new mechanism based on transient shock-wave-assisted lateral ionic spreading and oxide growth is reported for atomic force microscopy probe local oxidation (see figure). Transitory high pressure waves generated in the nanoscopic tip,sample junction significantly extend the distribution of hydroxyl oxidants to facilitate micrometer-scale disk-oxide growth on a silicon substrate. The results show that shock propagation may be a general phenomenon in AFM nanolithography. [source] Laser local oxidation of porous silicon: a FTIR spectroscopy investigationPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2005M. Rocchia Abstract The local oxidation of porous silicon (PS), induced by a focused laser beam, could represent an alternative method for patterning PS through direct writing. Important phase changes take place on PS when irradiated by a focused laser beam and moreover a complete confinement of the oxidized areas can be achieved due to the very low thermal conductivity of PS. We present a detailed Fourier Transform InfraRed (FTIR) study of the irradiated areas to understand the degree of oxidation and the type of oxide obtained at different laser powers. An interpretation of the low wavenumber range, below 1300 cm,1, in terms of Fröhlich interactions will be discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Lateral structuring of porous silicon: application to waveguidesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003A. M. Rossi Abstract The problem of lateral definition of waveguides and photonic structures has been tackled by means of direct laser scribing on porous silicon (PS). The low thermal conductivity of PS allows for local oxidation and even the complete ablation of the material with laser power of a few mW. The buried Laser Local Oxidized (LaLOx) method exhibits great versatility and efficiency in achieving lateral light confinement in waveguides. [source] Crystallographically oriented high resolution lithography of graphene nanoribbons by STM lithographyPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 4 2010G. Dobrik Abstract Due to its exciting physical properties and sheet-like geometry graphene is in the focus of attention both from the point of view of basic science and of potential applications. In order to fully exploit the advantage of the sheet-like geometry very high resolution, crystallographicaly controlled lithography has to be used. Graphene is a zero gap semiconductor, so that a field effect transistor (FET) will not have an "off" state unless a forbidden gap is created. Such a gap can be produced confining the electronic wave functions by etching narrow graphene nanoribbons (GNRs) typically of a few nanometers in width and with well defined crystallographic orientation. We developed the first lithographic method able to achieve GNRs that have both nanometer widths and well defined crystallographic orientation. The lithographic process is carried out by the local oxidation of the sample surface under the tip of a scanning tunneling microscopy (STM). Crystallographic orientation is defined by acquiring atomic resolution images of the surface to be patterned. The cutting of trenches with controlled depth and of a few nanometer in width, folding and manipulation of single graphene layers is demonstrated. The narrowest GNR cut by our method is of 2.5,nm width, scanning tunneling spectroscopy (STS) showed that it has a gap of 0.5,eV, comparable to that of germanium, which allows room temperature operation of graphene nanodevices. [source] Aharonov,Bohm effect of a quantum ring in the Kondo regimePHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003U. F. Keyser Abstract We investigate a small tuneable quantum ring fabricated by direct local oxidation using an atomic force microscope. The device contains very few electrons and is tuned into the Kondo regime. We study this Kondo effect by temperature dependent measurements. At finite bias voltages we observe additional peaks. These vanish with increasing temperature indicating Kondo correlations for these excited states. Additionally, the geometry of our device allows to study Aharonov,Bohm oscillations in the Kondo regime for a device containing less than ten electrons. We observe a modulation of the Kondo effect with a reduced Aharonov,Bohm period explained by electron,electron interaction in our small quantum ring. [source] |