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Liquid Phase Epitaxy (liquid + phase_epitaxy)
Selected AbstractsUV emission on a Si substrate: Optical and structural properties of ,-CuCl on Si grown using liquid phase epitaxy techniquesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2009A. Cowley Abstract Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300,400 nm spectral range. Current materials being used for such devices are typically based on II,VI and III-nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III-N devices is lattice mismatch-induced high dislocation densities for epitaxially grown layers on non-native substrates. ,-CuCl is a direct bandgap material and an ionic wide bandgap I,VII semiconductor with a room temperature free exciton binding energy of ,190 meV (compared to ,25 meV and ,60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (, , 366 nm). The lattice constant of ,-CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline ,-CuCl on Si(100) and Si(111) using vacuum-based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite-zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux-driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X-ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X-ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Analysis of epitaxial laterally overgrown silicon structures by high resolution x-ray rocking curve imagingCRYSTAL RESEARCH AND TECHNOLOGY, Issue 5 2009B. Heimbrodt Abstract Spatially resolved rocking curve imaging has been used to analyze laterally overgrown silicon layers grown by liquid phase epitaxy. We were able to study both the overgrown layer as well as the strain fluctuations of the Si substrate underneath by means of a tabletop x-ray topographic setup. The strain-field analysis reveals relative changes of the lattice parameter up to 3.5×10 -6 in the silicon substrate underneath the overgrown layer in particular regions and a down bending of both wings of the epitaxial overgrown layers. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Growth and characterisation of Zn:LiNbO3/Mg:LiNbO3 multilayer thin films grown by liquid phase epitaxyCRYSTAL RESEARCH AND TECHNOLOGY, Issue 9 2006H. J. Lee Abstract 1, 3 and 5 mol% ZnO doped LiNbO3 film and 2 mol% MgO doped LiNbO3 multilayer films were grown on the LiNbO3 (001) substrate by liquid phase epitaxy (LPE) method with a Li2O-V2O5 system. We examined the optical transmission spectra of the Zn:LiNbO3 by Fourier Transform-Infrared Spectrophotometer (FT-IR). The crystallinity and the lattice mismatch between the Zn:LiNbO3 film and Mg:LiNbO3 film was confirmed by x-ray rocking curve (XRC) and observed the ZnO and MgO distribution in the cross-section of the multilayer thin films by electron probe micro analyzer (EPMA). Furthermore, the surface morphology of the films was observed using atomic force microscopy (AFM). (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Large area lateral overgrowth of mismatched InGaP on GaAs(111)B substratesCRYSTAL RESEARCH AND TECHNOLOGY, Issue 12 2005S. Uematsu Abstract Application of InGaAs/InGaP double-heterostructure (DH) lasers increases the band offset between the cladding layer and the active layer more than the use of conventional 1.3 µm InGaAsP/InP lasers. As a first step in realizing 1.3 µm InGaP/InGaAs/InGaP DH lasers, we proposed InGaP lattice-mismatched epitaxial lateral overgrowth (ELO) technique and successfully carried out the InGaP growth on both GaAs (100), (111)B and InP (100) substrates by liquid phase epitaxy. In this work, we grew the InGaP crystal on GaAs (111)B substrate by adjusting Ga and P composition in In solution, to obtain In0.79Ga0.21P (, = 820 nm) virtual substrate for 1.3 µm InGaAs/InGaP DH lasers. To grow the InGaP all over the lateral surface of the substrate, the growth time was extended to 6 hours. The amount of InGaP lateral growth up to 2 hours was gradually increased, but the lateral growth was saturated. The InGaP lateral width was about 250 µm at the growth time of 6 hours. We report the result that optical microscope observation, CL and X-ray rocking curve measurements and reciprocal lattice space mapping were carried out to evaluate the crystal quality of the grown InGaP layers. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Numerical modeling and investigation of liquid phase epitaxy of Hg1,xCdxTe infrared detectorsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 9 2005K. Lin Abstract Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te-rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] The ,-particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxyPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2009Petr Prusa Abstract Y3Al5O12:Ce (YAG:Ce) thin films were grown from PbO-, BaO-, and MoO3 -based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5,10 ,s shaping time, and energy resolution of these samples were measured under ,-particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, , particle energy deposition in very thin films is modelled and discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Direct bonding conditions of ferrite garnet layer on ion-exchanged glass waveguidesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 10 2008Anne-Laure Joudrier Abstract In order to realize an integrated optical isolator, a new hybrid optical structure has been proposed. This structure is composed of an active magneto-optic garnet layer with a strong refractive index, transferred on a passive ion-exchanged glass waveguide. Given the thermal restraints relating to the stability of the glass waveguides, the process used to achieve this hybrid structure is composed of two main steps: firstly, good quality garnet films were grown by liquid phase epitaxy, then these active films were bonded successfully on glass wafer. According to modelling, the thickness of the garnet layer does not exceed 300 nm for maintaining a good confinement. Good wafer bondings on ion-exchanged glass waveguides are obtained. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Growth of epitaxial garnet film by LPE for application to integrated magneto-optic light switch arraysPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2004J. H. Park Abstract We investigate the dependence of the properties of garnet films grown by liquid phase epitaxy (LPE) on the procedure and the temperature of growth to tailor magnetic properties of Bi, Gd, Ga:YIG film for application to integrated magneto-optic light switch arrays. Because the yttrium and gallium concentrations of the films decreased slightly and the bismuth, iron concentrations of the films increased slightly with decreases of the growth temperature, the magnetic properties of the garnet film grown by LPE are very sensitive specially to a growth temperature. The decrease of Hsat with decreasing growth temperature indicates that the perpendicular magnetic anisotropy energy of the film decreases. The Bi, Gd, Ga:YIG film grown at around 730 °C have good magnetic properties, i.e., a low value of 4,Ms of 120 G, a low value of saturation field Hsat of 168 Oe, and a low perpendicular magnetic anisotropy for application of the magneto-optic spatial light modulators. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Ce and Yb doped InP layers grown for radiation detectionPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2007J. Zavadil Abstract InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe substrate with cerium (Ce) and ytterbium (Yb) additions to the growth melt. Grown layers were characterised by Hall measurements and low temperature photoluminescence spectroscopy. Both types of layers exhibit the change of electrical conductivity from n to p type. Ce and Yb have been found to be incorporated into the InP lattice since a sharp luminescence lines arising from inner shell transitions of Yb3+ and Ce3+ were detected at 1002 and 3534 nm, respectively. A metastable conductivity state of InP:Ce layers has been found at temperatures below 35 K, a phenomenon previously reported for InP:Yb layers. Similar electrical behaviour of InP (Ce, Yb) layers leads us to conclude that Ce acts as dominant acceptor impurity responsible for n,p conductivity change. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||