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Layer Epitaxy (layer + epitaxy)

Distribution by Scientific Domains
Physics and Astronomy100%

Kinds of Layer Epitaxy

  • atomic layer epitaxy
    		•

    Selected Abstracts

    Atomic layer epitaxy of GaMnAs on GaAs(001)

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2007
    M. Ozeki
    Abstract A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on GaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trisdimethylaminoarsine were used as source materials of gallium, manganese and arsenic atoms, respectively. Although the growth of GaMnAs was carried out at a high growth temperature of 500 °C, a distinct self-limiting mechanism was observed for the manganese alloy composition up to 6% and the epitaxial layer had no indications of including MnAs phase. The layer showed an atomically flat surface morphology reflecting the self-limiting growth. The self-limiting mechanism was largely affected by the lattice mismatch between GaMnAs epitaxial layer and GaAs substrate. When the manganese alloy composition exceeded 7%, the self-limiting mechanism was broken and MnAs precipitates were observed in the epitaxial layer. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
    Y. Naoi
    Abstract We studied the growth technique for the dislocation reduction in a-plane GaN grown by metal organic chemical vapour deposition (MOCVD) using AlInN buffer layer, high temperature atomic layer epitaxy, and trenched r-sapphire technique. By using these techniques, the crystal quality was much improved. We also fabricated blue light emitting diodes (LEDs) on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate. The electroluminescence (EL) characteristics of the LED samples were examined, and we found that the EL near field pattern from homo-epitaxially grown a-GaN based LED was spatially uniform, although the pattern from the LED on r-sapphire substrate was not uniform. The output power at the wavelength of 430nm was 0.72mW at the 20mA injection current for the sample on a-plane bulk GaN. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Comparison of ECR plasma pretreatment techniques for ZnO atomic layer epitaxy on the sapphire substrate

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2004
    Kyoungchul Shin
    Abstract ZnO films were grown on sapphire substrates treated with ECR plasma by the atomic layer epitaxy (ALE) technique. ZnO nucleation enhancing effects of oxygen, hydrogen, and argon plasma treatments were compared. The incubation period for ZnO nucleation was measured by using scanning electron microscopy (SEM) and Auger electron emission spectrometric (AES) analysis. The incubation period for ZnO nucleation on the Al2O3 substrate not treated with plasma was more than 40 ALE cycles. The incubation period was shortened down to less than 35 cycles by argon or hydrogen ECR plasma pretreatment and to less than 30 cycles by oxygen ECR plasma pretreatment. It was found that a microwave power of 300W and a plasma exposure times of 10 min were appropriate for oxygen ECR plasma treatment of sapphire substrate surfaces to enhance ZnO nucleation. Higher power and longer exposure time would not be effective or would rather aggravate than enhance ZnO nucleation. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Monocrystalline ZnO films grown by atomic layer epitaxy , growth and characterization

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2004
    K. Kopalko
    Abstract We report successful growth of thin films of ZnO by atomic layer epitaxy (ALE). Properties of the ZnO films grown by ALE on GaN/sapphire are described in relation to those grown by the same sequential procedure on uncoated sapphire and glass substrates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]