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Laser Performance (laser + performance)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Continuous wave and passively Q-switched laser performance of the mixed crystal Nd:Lu0.15Y0.85VO4

LASER PHYSICS LETTERS, Issue 5 2010
S. Zhang
Abstract Laser characteristics of a novel mixed laser crystal Nd:Lu0.15Y0.85VO4 was investigated. It is attractive for Q-switching with high repetition rate and short pulse width due to its suitable stimulated emission cross-section and short upper level lifetime. Continuous wave (CW) output power of 8.18 W was obtained at the pump power of 18.9 W, corresponding to the optical conversion efficiency of 43.3% and the slope efficiency of 47%. In the passive Q-switching operation, the minimum pulse width attained was 7.8 ns, with the pulse repetition frequency of 23.2 kHz, with the single pulse energy and peak power estimated to be 94.8 ,J and 12.2 kW, respectively. (© 2010 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Laser and nonlinear-laser properties of undoped and Nd3+ -doped orthorhombic Ca(NbO3)2 single crystals: new stimulated-emission performance and high-order picosecond stimulated Raman scattering covering more than two octave Stokes and anti-Stokes wavelengths

LASER PHYSICS LETTERS, Issue 11 2009
A.A. Kaminskii
Abstract We report new laser and nonlinear-laser properties of Nd3+ -ion doped and undoped orthorhombic calcium niobate. In particular, we show that: Nd3+:Ca(NbO3)2 is a promising gain medium for LD-pumped microchip lasers and undoped Ca(NbO3)2 can give rise to high-order lasing covering more than two-octave Stokes and anti-Stokes frequency comb in the visible and near-IR region. We measured also the main spectroscopic intensity characteristics related to the observed laser performance and identified their physical nature. (© 2009 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Continuous-wave laser operation at 1.33 ,m of Nd:CNGG and Nd:CLNGG crystals

LASER PHYSICS LETTERS, Issue 3 2008
Z.B. Shi
Abstract With a laser-diode (LD) as the pump source, continuous-wave (cw) laser performance at 1.33 ,m of Nd:CNGG and Nd:CLNGG crystals was demonstrated for the first time. The maximum power of 158 mW and 141 mW from Nd:CNGG and Nd:CLNGG lasers were obtained with the corresponding optical conversion efficiencies of 1.3% and 1.5%, and slope efficiencies of 2.0% and 2.9%, respectively. The difference between the laser performance of Nd:CNGG and Nd:CLNGG crystals was also discussed. (© 2008 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Simplified heat exchange model for semiconductor laser diodes thermal parameters extraction

LASER PHYSICS LETTERS, Issue 11 2005
P. S. André
Abstract By investigating the heat flow mechanism in a semiconductor laser diode, we demonstrate a comprehensive technique for optical device thermal parameters extraction to be used in the prediction of the laser performance This accurate and precise heat exchange model takes into account the relevant heat exchange mechanism and mechanical considerations of the laser diode mounting. We measured the thermal response of a semiconductor laser diode attach to a substrate, deriving from those the device thermal parameters such as heat capacity and thermal conductance for the device and subtract. From the estimated values a prediction of the real laser temperature response is obtained directly from the measurements realized in the substrate. (© 2005 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Temperature-tuning Yb:YAG microchip lasers

LASER PHYSICS LETTERS, Issue 9 2005
Jun Dong
Abstract Based on the quasi-three-level system, a theoretical model of diode-laser end-pumped fundamental continuous-wave (CW) Yb3+:YAG microchip lasers is proposed. The fluorescence concentration quenching effect, the temperature dependent mechanical and optical properties and the absorption efficiency of the host have been taken into account in the model. The theoretical results of the numerical calculations are in good agreement with those of experiments. The effects of the concentration of the Yb3+:YAG crystal, the thickness of the Yb3+:YAG crystal, the temperature and the transmission of the output coupler on the laser performance (threshold and output power) are addressed. The optimization of the concentration and the thickness for the Yb3+:YAG crystal microchip laser is presented. The effects of the temperature and the pump power intensity on the optical-tooptical efficiency are discussed. The output power can be scaled by increase the working area of the laser gain medium. This modeling is not only applicable to Yb3+:YAG crystal microchip laser but also to other quasi-three-level microchip lasers. (© 2005 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
C. Netzel
Abstract GaInN/GaN laser diodes with different laser performance but nearly identical structural design, all emitting at around 400 nm, were investigated with time-resolved and temperature-dependent photoluminescence under pulsed excitation and with temperature- and power-dependent photoluminescence under cw excitation. To compare the laser diodes with LEDs, the same measurements were performed for an LED structure emitting in the same spectral region. The time-resolved photoluminescence as well as the measurements under continuous excitation point at a more efficient nonradiative recombination for laser structures. This enhancement of nonradiative recombination for the laser diodes was observed to be most pronounced for the best laser diodes. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]