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K Oxides (k + oxide)
Selected AbstractsAtomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications (Adv. Eng.ADVANCED ENGINEERING MATERIALS, Issue 4 2009Mater. The cover shows high temperature XRD patterns of a 5.8 nm thick HfO2 film and 7.3 nm yttrium-doped HfO2 grown by atomic layer deposition (ALD). More details can be found in the article of J. Niinistö et al. where recent development in ALD of high-k dielectric oxides for memory applications is reviewed on page 223. [source] Atomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications,ADVANCED ENGINEERING MATERIALS, Issue 4 2009Jaakko Niinistö Abstract This paper reviews several high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi-layers in the form of nano-laminates are of interest.Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development. [source] Interface Reactions in Ultrathin Functional Dielectric Films,ADVANCED ENGINEERING MATERIALS, Issue 4 2009Dieter Schmeißer The functional properties of shrunken materials should not be influenced by the reduction of the dimensions. Here, an important consideration is the control of interfacial reactions. We report on synchrotron-based spectroscopic analysis of interfaces of ultrathin functional materials (thickness <10 nm). Examples of high- k oxides, as well as of a ferroelectric polymer, are shown. We demonstrate that our spectroscopic findings are also reflected in the electric properties of thin-film devices. [source] Synthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition,ADVANCED MATERIALS, Issue 21 2007M. Knez Abstract Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process extremely thin insulating layers (high- k oxides) onto large-area silicon substrates. ALD is also a key technology for the surface modification of complex nanostructured materials. After briefly introducing ALD, this Review will focus on the various aspects of nanomaterials and their processing by ALD, including nanopores, nanowires and -tubes, nanopatterning and nanolaminates as well as low-temperature ALD for organic nanostructures and biomaterials. Finally, selected examples will be given of device applications, illustrating recent innovative approaches of how ALD can be used in nanotechnology. [source] | ||||||||||