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K Dielectric (k + dielectric)

Distribution by Scientific Domains
Polymers and Materials Science75%

Selected Abstracts

Fabrication of AlGaN/GaN MIS-HFET using an Al2O3 high k dielectric

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
Ki-Yeol Park
Abstract We report on a metal,insulator,semiconductor AlGaN/GaN heterostructure field-effect transistor (MIS-HFET) using Al2O3 simultaneously for channel passivation layer and as a gate insulator which was deposited by plasma enhanced atomic layer deposition(PE-ALD). Capacitance,voltage measurements show successful surface passivation by the Al2O3 dielectric layer. For a gate length 1.2 ,m with 15 ,m source-to-drain spacing the maximum drain current was 1.22 A/mm, the maximum transconductance was 166 mS/mm and the gate leakage current was 4 nA/mm at Vgs = ,20 V which is at least three orders of magnitude lower than that of conventional AlGaN/GaN HFETs. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Liquid-Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)-bis(di- tert -butylmalonato) as a Novel Precursor,

CHEMICAL VAPOR DEPOSITION, Issue 5 2006
R. Thomas
Abstract The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis-(diethylamido)bis(di- tert -butylmalonato) zirconium, [Zr(NEt2)2(dbml)2], has been characterized and tested in a production-type MOCVD reactor for ZrO2 thin-film deposition. Up to 450,°C, the ZrO2 films are amorphous, and above 475,°C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (,2.5Å) for as-deposited amorphous films compared to crystalline films (,6.0,Å); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO2/SiOx/Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4,nm thick films are below 10,4,A,cm,2 at a bias of ,1,V. Hence, the precursor shows promising properties for possible application in the deposition of high- k gate oxide (MIS) and high- k dielectric (MIM) structures. [source]

Polaron Localization at Interfaces in High-Mobility Microcrystalline Conjugated Polymers

ADVANCED MATERIALS, Issue 37 2009
N. Zhao
The charge-induced optical absorptions of two-dimensional polarons in semicrystalline, high-mobility conjugated polymers are investigated as a function of distance from an interface with polymer gate dielectrics of different dielectric constants. For high- k dielectrics, polarons in the accumulation layer at the interface are found to be more localized than those in the bulk. [source]

Synthesis of Mesoporous Organosilicate Films in Supercritical Carbon Dioxide,

ADVANCED MATERIALS, Issue 2 2006
A. Pai
Uniform, well-ordered, mesoporous organosilicate films (see Figure) have been synthesized by efficient direct and post-synthesis functionalization methods in supercritical carbon dioxide and characterized using spectroscopic, microscopy, and diffraction techniques. These materials have numerous potential applications, including in sensors, low- k dielectrics, separations, and catalysis. [source]