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J. Appl (j + appl)
Selected AbstractsThe Reissner,Sagoci problem for a transversely isotropic half-spaceINTERNATIONAL JOURNAL FOR NUMERICAL AND ANALYTICAL METHODS IN GEOMECHANICS, Issue 11 2006Mohammad Rahimian Abstract A transversely isotropic linear elastic half-space, z,0, with the isotropy axis parallel to the z -axis is considered. The purpose of the paper is to determine displacements and stresses fields in the interior of the half-space when a rigid circular disk of radius a completely bonded to the surface of the half-space is rotated through a constant angle ,0. The region of the surface lying out with the circle r,a, is free from stresses. This problem is a type of Reissner,Sagoci mixed boundary value problems. Using cylindrical co-ordinate system and applying Hankel integral transform in the radial direction, the problem may be changed to a system of dual integral equations. The solution of the dual integral equations is obtained by an approach analogous to Sneddon's (J. Appl. Phys. 1947; 18:130,132), so that the circumferential displacement and stress fields inside the medium are obtained analytically. The same problem has already been approached by Hanson and Puja (J. Appl. Mech. 1997; 64:692,694) by the use of integrating the point force potential functions. It is analytically proved that the present solution, although of a quite different form, is equivalent to that given by Hanson and Puja. To illustrate the solution, a few plots are provided. The displacements and the stresses in a soil deposit due to a rotationally symmetric force or boundary displacement may be obtained using the results of this paper. Copyright © 2006 John Wiley & Sons, Ltd. [source] Transient deformation of a poroelastic channel bedINTERNATIONAL JOURNAL FOR NUMERICAL AND ANALYTICAL METHODS IN GEOMECHANICS, Issue 13 2002P.C. Hsieh Abstract The coupled transient response of a poroelastic bed form due to stream flow and non-linear water waves is investigated numerically. The theory of potential flow is applied to channel flow while Biot's theory of poroelasticity (J. Appl. Phys. 1962; 33(4):1482) is adopted to deal with the deformable porous bed. A boundary-fitted co-ordinate system is used to calculate the variation in the bed form. The result of a simple periodic wave form over a soft poroelastic bed agrees well with the analytical solution of Hsieh et al. (J. Eng. Mech., ASCE 2000; 126(10):1064). However, due to the rapidly damping second dilatational wave inside the soft poroelastic bed, the solution for transient bed form near the interface is not easy to compute accurately. In order to overcome this difficulty, a simplified numerical model based on the boundary layer correction concept proposed by Hsieh et al. (2000) is established, which neglects Darcy's terms. The transient deformation of an irregular poroelastic bed that includes a trench and a downward step at the channel bed is simulated successfully. Copyright © 2002 John Wiley & Sons, Ltd. [source] A non-linear triangular curved shell elementINTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN BIOMEDICAL ENGINEERING, Issue 4 2004T. Wenzel Abstract The objective of this paper is to present and test a simple triangular finite shell element that uses five degrees of freedom at each node. The element is characterized by three position vectors and three unit directors. It depicts the plane stress state version of the element presented (Comput. Struct. 1989; 32(2):379). The element is of the ANS-type (assumed natural strain (J. Appl. Mech. 1981; 48:587). All strains inside the element contain dot products of the six actual element nodal vectors. The construction of the element also allows non-linear material behaviour. Since an enhancement of the membrane strains by the EAS (enhanced assumed strain method) is not possible inside a three node triangle element, the membrane strains perform poor. But via the DKT (discrete Kirchhoff theory) the three directors reveal an excellent bending behaviour for thin shells. The main concern of this paper is to test, if superimposing the CST (constant srain) with the classic DKT leads to good results in standard benchmark tests. Copyright © 2004 John Wiley & Sons, Ltd. [source] Numerical analysis of boundary-value problems for singularly perturbed differential-difference equations: small shifts of mixed type with rapid oscillationsINTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN BIOMEDICAL ENGINEERING, Issue 3 2004M. K. Kadalbajoo Abstract We study the boundary-value problems for singularly perturbed differential-difference equations with small shifts. Similar boundary-value problems are associated with expected first-exit time problems of the membrane potential in models for activity of neurons (SIAM J. Appl. Math. 1994; 54: 249,283; 1982; 42: 502,531; 1985; 45: 687,734) and in variational problems in control theory. In this paper, we present a numerical method to solve boundary-value problems for a singularly perturbed differential-difference equation of mixed type, i.e. which contains both type of terms having negative shifts as well as positive shifts, and consider the case in which the solution of the problem exhibits rapid oscillations. The stability and convergence analysis of the method is given. The effect of small shift on the oscillatory solution is shown by considering the numerical experiments. The numerical results for several test examples demonstrate the efficiency of the method. Copyright © 2004 John Wiley & Sons, Ltd. [source] Conserving Galerkin weak formulations for computational fracture mechanicsINTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN BIOMEDICAL ENGINEERING, Issue 12 2002Shaofan Li Abstract In this paper, a notion of invariant Galerkin-variational weak forms is proposed. Two specific invariant variational weak forms, the J-invariant and the L-invariant, are constructed based on the corresponding conservation laws in elasticity, one of which is the conservation of Eshelby's energy-momentum (Eshelby. Philos. Trans. Roy. Soc. 1951; 87: 12; In Solid State Physics, Setitz F, Turnbull D (eds). Academic Press: New York, 1956; 331; Rice, J. Appl. Mech. 1968; 35: 379). It is shown that the finite element solution obtained from the invariant Galerkin weak formulations proposed here can conserve the value of J-integral, or L-integral exactly. In other words, the J and L integrals of the Galerkin finite element solutions are path independent in the discrete sense. It is argued that by using the J-invariant Galerkin weak form to compute near crack-tip field in an elastic solid, one may accurately calculate the crack extension energy release rate and subsequently the stress intensity factors in numerical computations, because the flux of the energy-momentum is conserved in discrete computations. This may provide an alternative means to accurately simulate crack growth and propagation. Copyright © 2002 John Wiley & Sons, Ltd. [source] What if the UK or Sweden had joined the euro in 1999?INTERNATIONAL JOURNAL OF FINANCE & ECONOMICS, Issue 1 2007An empirical evaluation using a Global VAR Abstract This paper attempts to provide a conceptual framework for the analysis of counterfactual scenarios using macroeconometric models. As an application we consider UK entry to the euro. Entry involves a long-term commitment to restrict UK nominal exchange rates and interest rates to be the same as those of the euro area. We derive conditional probability distributions for the difference between the future realizations of variables of interest (e.g. UK and euro area output and prices) subject to UK entry restrictions being fully met over a given period and the alternative realizations without the restrictions. The robustness of the results can be evaluated by also conditioning on variables deemed to be invariant to UK entry, such as oil or US equity prices. Economic interdependence means that such policy evaluation must take account of international linkages and common factors that drive fluctuations across economies. In this paper this is accomplished using the Global VAR recently developed by Dees et al. (J. Appl. Econometrics, 2007, forthcoming). The paper briefly describes the GVAR which has been estimated for 25 countries and the euro area over the period 1979,2003. It reports probability estimates that output will be higher and prices lower in the UK and the euro area as a result of entry. It examines the sensitivity of these results to a variety of assumptions about when and how the UK entered and the observed global shocks and compares them with the effects of Swedish entry. Copyright © 2007 John Wiley & Sons, Ltd. [source] A software system for rigid-body modelling of solution scattering dataJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3-1 2000M.B. Kozin A computer system for rigid body modelling against solution scattering data is described. Fast algorithms to compute scattering from a complex of two arbitrary positioned subunits are implemented and coupled with the graphics program ASSA (Kozin, Volkov & Svergun, 1997, J. Appl. Cryst.30, 811-815). Mutual positions and orientations of the subunits (represented by low-resolution envelopes or by atomic models) can be determined by interactively fitting the experimental scattering curve from the complex. The system runs on the major Unix platforms (SUN, SGI and DEC workstations). [source] Shock formation in a chemotaxis modelMATHEMATICAL METHODS IN THE APPLIED SCIENCES, Issue 1 2008Zhian Wang Abstract In this paper, we establish the existence of shock solutions for a simplified version of the Othmer,Stevens chemotaxis model (SIAM J. Appl. Math. 1997; 57:1044,1081). The existence of these shock solutions was suggested by Levine and Sleeman (SIAM J. Appl. Math. 1997; 57:683,730). Here, we consider the general Riemann problem and derive the shock curves in parameterized forms. By studying the travelling wave solutions, we examine the shock structure for the chemotaxis model and prove that the travelling wave speed is identical to the shock speed. Moreover, we explicitly derive an entropy,entropy flux pair to prove the uniqueness of the weak shock solutions. Some discussion is given for further study. Copyright © 2007 John Wiley & Sons, Ltd. [source] Strain-engineered novel III,N electronic devices with high quality dielectric/semiconductor interfacesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003M. Asif Khan Abstract Since the early demonstration of 2D-electron gas [M. A. Khan et al., Appl. Phys. Lett. 60, 3027 (1992)] and a heterojunction field effect transistor (HFET) [M. Asif Khan et al., Appl. Phys. Lett. 63, 1214 (1993)] in III,N materials, rapid progress has been made to improve the DC and RF performance of GaN,AlGaN based HFETs. Stable and impressive microwave powers as high as 4,8 W/mm have been reported for device operation frequencies from 10 to 35 GHz. The key reason for these high performance numbers is an extremely large sheet carrier densities (>1 × 1013 cm,2) that can be induced at the interfaces in III,N hetereojunction [A. Bykhovsk et al., J. Appl. Phys. 74, 6734 (1993); M. Asif Khan et al., Appl. Phys. Lett. 75, 2806 (1999)]. These are instrumental in screening the channel dislocations thereby retaining large room temperature carrier mobilities (>1500 cm2/Vs) and sheet resistance as low as 300 ,/sq. These numbers and the high breakdown voltages of the large bandgap III,N material system thus enable rf-power approximately 5,10 times of that possible with GaAs and other competitor's technologies. We have recently introduced a unique pulsed atomic layer epitaxy approach to deposit AlN buffer layers and AlN/AlGaN superlattices [J. Zhang et al., Appl. Phys. Lett. 79, 925 (2001); J. P. Zhang et al., Appl. Phys. Lett. 80, 3542 (2002)] to manage strain and decrease the dislocation densities in high Al-content III,N layers. This has enabled us to significantly improve GaN/AlGaN hetereojunctions and the device isolation. The resulting low defect layers are not only key to improving the electronic but also deep ultraviolet light-emitting diode devices. For deep UV LED's they enabled us to obtain peak optical powers as high as 10 mW and 3 mW for wavelengths as short as 320 nm and 278 nm. Building on our past work [M. Asif Khan et al., Appl. Phys. Lett. 77, 1339 (2000); X. Hu et al., Appl. Phys. Lett. 79, 2832 (2001)] we have now deposited high quality SiO2/Si3N4 films over AlGaN with low interface state densities. They have then been used to demonstrate III,N insulating gate transistors (MOSHFET (SiO2) and MISHFET (Si3N4) with gate leakage currents 4,6 order less than those for conventional GaN,AlGaN HFETs. The introduction of the thin insulator layers (less then 100 Å) under the gate increases the threshold voltage by 2,3 V. In addition, it reduces the peak transconductance gm. However the unity cut-off frequency, the gain and the rf-powers remain unaffected as the gm/Cgs (gate-source capacitance) ratio remains unchanged. In addition to managing the defects and gate leakage currents we have also employed InGaN channel double heterojunction structures (AlInGaN,InGaN,GaN) to confine the carriers thereby reducing the spillover into trappings states. These InGaN based MOS-DHFETs exhibited no current-collapse, extremely low gate leakage currents (<10,10 A/mm) and 10,26 GHz rf-powers in excess of 6 W/mm. We have also demonstrated the scalability and stable operation of our new and innovative InGaN based insulating gate heterojunction field effect transistor approach. In this paper we will review the III,N heterojunction field-effect transistors progress and pioneering innovations including the excellent work from several research groups around the world. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Activation energy of thermally grown silicon dioxide layers on silicon substratesPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 10 2009G. Gerlach Abstract A detailed numerical consideration is used as basic approach for calculating profiles of activation energy versus oxide thickness for various temperatures between 780 and 930,°C. Results presented here are intentionally not based on models of diffusion and reaction kinetics to avoid introducing correction terms due to the expansion of theory still under discussion. The statistical calculation gives the mean activation energy of 2.01,eV with standard deviation of 0.10,eV, very close to the overall activation energy of 2.05,eV [M. A. Rabie, Y. M. Haddara, and J. Carette, J. Appl. Phys. 98, 074904 (2005)]. More instructive features of the thermal oxidation of silicon have been disclosed directly from measurements of oxide thickness with time [M. A. Hopper, R. A. Clarke, and L. Young, J. Electrochem. Soc. 122, 1216 (1975) and J. Blanc, Philos. Mag. B 55, 685 (1987)]. Graphs of the natural logarithm of the growth rate versus oxide thickness, in the range between 2 and 65,nm, show that the oxide thickness influences the activation energy EA between 1.4 and 2.7,eV. [source] | |||||||||||||