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Interface Roughness (interface + roughness)
Selected AbstractsSurface-sensitive reflection-mode EXAFS from layered sample systems: the influence of surface and interface roughnessJOURNAL OF SYNCHROTRON RADIATION, Issue 4 2009P. Keil The calculation of reflection-mode grazing-incidence X-ray absorption spectra from single surfaces and (multi-)layered systems is studied here. In particular, the influence of the surface and interface roughness was investigated in detail. Simulations of grazing-incidence reflection-mode EXAFS spectra using a simple Fresnel theory neglecting any effect of roughness are compared with the Névot,Croce model and the elaborated distorted-wave Born approximation which both include surface and interface roughness. Data are presented for clean gold surfaces, where the strong influence of the surface roughness on the resulting spectra is demonstrated. Furthermore, in the case of layered systems, the influence of both the outer (air or vacuum side) surface roughness and the inner interface roughness on the reflection-mode EXAFS spectra is evaluated. The practical consequences of the observed correlations are discussed, and a quantitative data analysis of a copper sample that was oxidized in ambient air for several months is shown, including the evaluation of specular reflectivity profiles at fixed energy. [source] Effects of Thermal Annealing on the Structure of Ferroelectric Thin FilmsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2006Jiang-Li Cao The effects of thermal annealing on the structure of polycrystalline Pb(Zr0.3Ti0.7)O3 (PZT) ferroelectric thin films prepared by chemical solution deposition on Pt/TiOx electrode stacks were studied using scanning electron microscopy, transmission electron microscopy (TEM), and grazing incidence X-ray specular and diffuse reflectivity of synchrotron radiation. The stratified multilayered structure and element diffusions in the sample were characterized by TEM. Global statistical structural parameters including the density, surface or interface roughness and thickness of each layer in the samples were obtained from fitting the X-ray specular reflectivity using a homogeneous stratified multilayer model of PZT/Pt/TiOx/SiO2. The results showed that the PZT surface and PZT/Pt interface roughness changed slightly during thermal annealing in oxygen at 700°C. By contrast, the density increase of the PZT ceramic and density decrease of the Pt-bottom electrode during annealing were observed. A high density value of the PZT ceramic film after the annealing was found, up to 99.8% of the theoretical value of the corresponding bulk ceramics. The density changes of the PZT and Pt layers were further confirmed by X-ray diffuse reflectivity. The influences of the annealing treatment on the density changes of the PZT and Pt layers were attributed to the further densification of the PZT ceramic and incorporation of light elements such as Zr, Ti and O from the neighboring layers into the Pt layer, respectively, as discussed in correlation with the TEM analyses. [source] Light propagation and scattering in porous silicon nanocomposite waveguidesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2005P. Pirasteh Abstract Planar waveguides have been achieved from oxidised porous silicon layers (OPS) which have been impregnated by solvents, Congo Red (CR) dye and poly(p-phenylene vinylene) (PPV) polymer. Optical loss has been investigated by a simple technique based on surface optical scattering measurements. Optical loss has been studied as a function of the wavelength, impregnation type and CR concentration. The main sources of attenuation, such as absorption, scattering from interface roughness, scattering from nano- crystallites and modification of the refractive indexes after filling are discussed. Optical loss measured at 0.633 µm is about 1.8 dB/cm for the OPS waveguides The optical loss decreases with wavelength. Otherwise, the optical loss increases with the concentration of Congo Red dye which is absorbent at this wavelength. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Microstructure and exchange coupling parameters of MTJ with CoFeB bottom electrodePHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 1 2006J. Kanak Abstract In this study, we report the relationship between interface roughness, texture and the exchange bias and the interlayer-Néel coupling fields of the spin-valve magnetic tunnel junction (SV-MTJ). SV-MTJs with the structure: Si(100)/SiO2/buffer/IrMn/CoFeB/AlOx/NiFe/Ta were deposited on two buffers: Cu and Ta/Cu/Ta/Cu, and next the samples were annealed in vacuum and in a magnetic field. XRD analysis reveals that the texture degree of MTJ with Cu buffer is significantly lower than that of the sample with Ta/Cu/Ta/Cu buffer. The enhancement of IrMn and CoFeB texture leads to a higher amplitude of roughness and an increase of exchange bias and Néel coupling fields. The comparison of junctions with CoFe and CoFeB bottom electrodes shows that addition of 5% B in a CoFe layer makes the surface of the pinned layer smoother. This leads to a lower Néel coupling field, which is desirable for application of MTJ in MRAM technology. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Diamagnetic and nonlinear Zeeman shifts in spatially separated electron and hole layers of semiconductor heterostructures with disorderPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003J. Desforges Abstract The effect of the diamagnetic shift on the formation of excitons is investigated for double layer semiconductor systems in which electrons and holes are spatially separated. The effect of disorder due to interface roughness of the double layer structures is included in the calculation of exciton density. Numerical calculations are performed based on an effective lattice-gas model where the electron,hole system is divided into unit cells. The exciton density is calculated by using the partition function method. The effect of the nonlinear Zeeman splitting is also included in the numerical calculations. It is found that the density of the optically allowed exciton states (excitons with Sz = 0) increases under the influence of either or both the diamagnetic and the nonlinear Zeeman shifts. [source] The role of phonons in establishing a non-equilibrium quasiparticle state in small gap multiple tunnelling superconducting tunnel junctionsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2004A. G. Kozorezov Abstract We derive expressions for phonon escape times from a thin superconducting film. The escape time is determined by the rate of scattering conversion for phonons propagating beyond the critical cone for total internal reflection. The conversion is due to different scattering processes for the groups of Cooper pair breaking and sub-gap phonons. For pair breaking phonons the most efficient conversion mechanism is through the interaction with the condensate. For sub-gap phonons the conversion rate is much slower and for plane parallel films is due to elastic scattering at surface or interface roughness resulting in significantly slower escape times. We discuss implications of slow escape time for sub-gap phonons for the properties of the recently observed new non-equilibrium state in small gap multiple tunnelling superconducting tunnel junctions. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Dynamic Newton,gradient-direction-type algorithm for multilayer structure determination using grazing X-ray specular scattering: numerical simulation and analysisACTA CRYSTALLOGRAPHICA SECTION A, Issue 1 2009F. N. Chukhovskii A new dynamic iterative algorithm code for retrieving macroscopic multilayer structure parameters (the layer thickness and complex refraction index for each layer, the surface roughness and the interface roughness between the layers) from specular scattering angular scan data is proposed. The use of conventional direct methods, particularly the well known Newton algorithm and gradient-direction-type algorithm operating dynamically to minimize the error functional in a least-squares fashion, is explored. Such an approach works well and seems to be effective in solving the inverse problem in the high-resolution X-ray reflectometry (HRXR) method. In order to demonstrate some features of the proposed iterative algorithm, numerical calculations for retrieving three-layer structure parameters are carried out using simulated HRXR angular scan data. The calculations indicate clearly that the dynamic iterative algorithm is convergent and capable of yielding the true solution. It is important that the performance coefficient for successful iterative cycles for the absolute minimization of the HRXR error functional is quite high even if the initial values of the search parameters are chosen rather far from the true values. It is particularly noteworthy that the relative number of successful iterative cycles is of the order of 90,40% when only moderately accurate initial parameter values, varying by ±10,40% from the true values, are presumed. [source] Electron-hole complexes localized on the quantum well interface roughnessesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2007M. A. Semina Abstract The localization of two-dimensional electron-hole complexes on the attractive potential of an arbitrary shape is studied theoretically. General method of a simple and vivid trial function construction for calculation of the ground state binding energy for such complexes is suggested. The limiting cases corresponding to different relations between characteristic parameters are analyzed. The developed method is illustrated by the particular calculations for the case of exciton in two-dimensional quantum well with an additional lateral con.nement potential. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | |||||||||||||