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InSb Films (insb + film)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Surface morphology of highly mismatched InSb films grown on GaAs substrates by molecular beam epitaxy

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 2 2007
Min Xiong
Abstract InSb films on GaAs(001) substrates with and without GaAs buffer layer have been grown by molecular beam epitaxy. Rather than surface undulations, aligned ripples and pyramidal hillocks along the orthogonal ,110, directions were observed on the surface of InSb films. Both the preferential growth and the termination of ripples were proved to be related to strain-driven mass transport. A model was proposed to elucidate the formation of the hillocks, which are more efficient to relax strain than ripples. Due to the strain relaxation through hillocks with small bases predominantly, the surfaces of the InSb films grown without a GaAs buffer layer are smoother than those of films grown with a GaAs buffer layer. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Fabrication and properties of InSb films with ion-beam sputtering for use in the amplification of magneto-surface-acoustic waves

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2004
N. Obata
Abstract The magnetic surface acoustic wave (MSAW) device can be manipulated by an external magnetic field. However the MSAW is attenuated largely at high frequencies above MHz. Therefore, we proposed a MSAW device having a hybrid structure consisting of FeB amorphous thin film/InSb semiconductor thin film/LiNbO3 substrate. This device is utilized for amplification of surface acoustic waves by the interaction between surface acoustic waves and the carriers in the InSb semiconductor. We prepared (111) InSb thin films by ion beam sputtering. We obtained InSb thin films having Hall mobilities of about 2000 cm2/Vs by subsequent annealing. This showed the possibility of MSAW amplification by low voltages. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Growth of InSb thin films on GaAs(100) substrates by flash evaporation epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2004
M. Oszwaldowski
Abstract A two-stage flash-evaporation epitaxy of InSb thin films on GaAs(100) substrates is developed. In the first, low temperature stage, a buffer layer of thickness of about 20 nm is deposited. In the second, high temperature stage the bulk of the film is deposited. Thus obtained InSb films have good structural and electrical properties, comparable with those obtained by MBE. They can be used for practical applications, e.g. for Hall sensors. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]