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InGaN QWs (ingan + qw)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Optical gain and gain saturation of blue-green InGaN quantum wells

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010
Dmitry Sizov
Abstract Using varied stripe length method we systematically studied optical gain properties of blue-green 3,nm InGaN QWs grown on c -plane and (11,22) semipolar substrates. We determined that for such structures when the product of modal net gain at peak and stripe length exceeds factor 5 the gain saturation occurs due to depletion of pumped carriers. We then focused our attention on the gain in unsaturated conditions. We observed strong gain peak position blue shift with increase of pumping power for both substrate orientations due to quantum well state filling and for c -plane due to piezoelectric field screening. Thus in order to increase lasing wavelength, minimizing optical losses, and maximizing modal gain are essential. We then found that for the semipolar QWs the gain at ,500,nm was 2× higher with the stripe along [,1,123] direction despite the fact that at low pumping level the polarization switching of spontaneous emission resulted predominant E||[,1,123]. Finally we compared the semipolar and c -plane QWs and found that the gain increase with pumping power of c -plane QW is slower than that for semipolar QW in high gain direction while the transparency pumping power is lower for c -plane. [source]

Polarization field crossover in semi-polar InGaN/GaN single quantum wells

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2010
H. Shen
Abstract We present an electroreflectance study of the polarization field in semi-polar (10) and (112) oriented InGaN quantum wells (QW). For the () sample, the flat-QW condition (the electric field in the QW is zero) is at a reverse bias voltage. For the (112) sample, the flat-QW condition is at a forward bias voltage larger than the turn on voltage of the diode. However, the flat-barrier condition (the electric field in the barrier region is zero) is at a forward bias voltage less than the turn on voltage of the diode. The flat-QW condition and the flat-barrier condition are determined by examining the zero-crossing and the Franz-Keldysh oscillations in the electroreflectance signal for (10) and (112) InGaN QWs, respectively. From the corresponding bias voltages, we deduce the polarization field in the QWs and conclude that in the semi-polar InGaN/GaN QW there is a crossover angle between the polar and non-polar orientations where the polarization field vanishes. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Characterization of asymmetric GaN/InGaN multiple quantum well

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
Z. Z. Chen
Abstract The microstructure and electronic structure of the asymmetric GaN/InGaN multiple quantum well (MQW) light emitting diodes are characterized by transmission electron microscope (TEM), cathodoluminescence (CL) and capacitance-voltage (C-V) measurements. In TEM images, the asymmetric structure of InGaN/GaN MQW are observed as designed with different width of QWs and barriers, and indium content in QWs as well. In high-resolution TEM images, the InGaN quantum wells and GaN barriers show the same lattice constant, and some degradation can be seen at the bottom of each InGaN QW. There are two emission peaks, 450 and 530 nm in CL spectrum, similar to the ones in electroluminescence spectrum. The double emission peaks are assigned to the irradiative recombination in different InGaN QWs. From the C-V data, the apparent carrier concentration in the asymmetric MQW is calculated. There are five obvious peaks which are well explained by an energy band scheme of InGaN/GaN MQW. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

High quality, high efficiency and ultrahigh In-content InGaN QWs , the problem of thermal stability

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
D. Fuhrmann
Abstract InxGa1-xN/GaN quantum well (QW) structures with Indium concentrations above 30% suited for light emitters in the green and beyond have been investigated. The structures were optimized for homogeneous Indium distributions and abrupt interfaces. We obtained very high internal quantum efficiencies (IQE) of 80% and 70% for 460 nm and 510 nm emission wavelength, respectively. However, for high In concentrations the heterostructures are thermally less stable. This is evident from systematic studies including varied GaN cap temperatures and different post annealing procedures. For elevated temperatures we observe a reduction of the PL intensity, a broadening and a shift to higher energies of the PL lines without indication of phase separation. The reason is the soft indium-nitrogen bond, the degradation likely occurs by In interdiffusion or outdiffusion via defects in the structures. The critical temperatures are well below those typical for p-GaN contact layer growth and thus need to be considered in device applications. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Size and shape of In rich clusters and InGaN QWs at the nanometer scale

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005
P. Ruterana
Abstract Following the need to accurately understand the In composition fluctuations and their role on the optical properties of the GaN based heterostructures, an investigation of MOCVD InGaN/GaN quantum wells is carried out. To this end, quantitative High Resolution Transmission Electron Microscopy (HRTEM) is coupled with image simulation and Finite Element Method (FEM) for the thin foil relaxation modelling. The results show that the indium content can reach x = 1 in the clusters inside the core. In these MOCVD QWs, we attempt to connect the Quantum dot density, composition, and shape to the growth conditions, in order to help the engineering process of highly efficient devices. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]