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InGaAs Quantum Dot (InGaA + quantum_dot)

Distribution by Scientific Domains
Physics and Astronomy85%

Selected Abstracts

Coherent Properties of Quantum Dot Two-Level Systems

ISRAEL JOURNAL OF CHEMISTRY, Issue 4 2006
Artur Zrenner
In a single self-assembled InGaAs quantum dot, the one-exciton ground-state transition defines a two-level system, which appears as an extremely narrow resonance of only a few ,eV width. The resonant interaction of this two-level system with cw laser fields can be studied in detail by photocurrent spectroscopy, revealing the fine structure of the excitonic ground state as well as the effects of nonlinear absorption and power broadening. For the case of pulsed laser fields and in the absence of decoherence, the two-level system represents a qubit. Excitations with ps laser pulses result in qubit rotations, which appear as Rabi oscillations in photocurrent experiments. Double pulse experiments further allow us to infer the decoherence time and to perform coherent control on a two level system. [source]

Temperature dependent high resolution resonant spectroscopy on a charged quantum dot

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 4 2009
M. Kroner
Abstract We present temperature dependent high resolution resonant optical spectroscopy on a single, negatively charged InGaAs quantum dot. We performed laser transmission measurements yielding the natural linewidth of the excitonic ground state transition of a quantum dot in a temperature range from 4.2 K up to 25 K. Here, we describe the linewidth evolution and the temperature induced red shift of the resonance energy with simple models based on the exciton,phonon coupling in the quantum dot. The resonant spectroscopy measurements are complemented with results from non-resonant PL measurements on the very same quantum dot. Here we observe a simple linear behavior of the linewidth according to an effect of a fluctuating environment. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2009
E. Selçuk
Abstract Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-like periodic arrangement are created by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice (SL) templates on planar GaAs (311)B substrates in molecular beam epitaxy. On shallow- and deep-patterned substrates the respectively generated steps and facets guide the self-organization process during SL template formation to create more complex ordering such as periodic stripes, depending on pattern design. Here we demonstrate for patterns such as shallow- and deepetched round holes and deep-etched zigzag mesas that the self-organized periodic arrangement of QD molecules and single QDs is spatially locked to the pattern sidewalls and corners. This extends the concept of guided self-organization to deterministic self-organization. Absolute position control of the QDs is achieved without one-to-one pattern definition. This guarantees the excellent arrangement control of the ordered QD molecules and single QDs with strong photoluminescence emission up to room temperature, which is required for future quantum functional devices. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Nonlinear optical microscopy of a single self-assembled InGaAs quantum dot

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2006
M. Wesseli
Abstract Carrier dynamics in InGaAs/GaAs quantum dots is analyzed with highly sensitive two-color femtosecond transmission spectroscopy. Especially, a single artificial atom is addressed in the optical near-field of a nanometer scale shadow mask. Resonantly exciting the wetting layer beneath the nanoisland, we detect transmission changes of the quantum dot with narrowband femtojoule probe pulses. We find bleaching signals in the order of 10,5 that arise from individual interband transitions. Moreover, the nonlinear optical response reveals a picosecond dynamics associated with carrier relaxation in the quantum dot. As a result, we have demonstrated an ultrafast optical tool for both manipulation and read-out of a single self-assembled quantum dot. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electrical spin injection into InGaAs quantum dots: single dot devices and time-resolved studies

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2009
M. Hetterich
Abstract In the context of a potential future quantum information processing we investigate the concurrent initialization of electronic spin states in InGaAs quantum dots (QDs) via electrical injection from ZnMn(S)Se spin aligners. Single dots can be read out optically through metallic apertures on top of our spin-injection light-emitting diodes (spin-LEDs). A reproducible spin polarization degree close to 100% is observed for a subset of the QD ensemble. However, the average polarization degree is lower and drops with increasing QD emission wavelength. Our measurements suggest that spin relaxation processes outside the QDs, related to the energetic position of the electron quasi-Fermi level, as well as defect-related spin scattering at the III,V/II,VI interface should be responsible for this effect, leading us to an improved device design. Finally, we present first time-resolved electroluminescence measurements of the polarization dynamics using nanosecond-pulsed electrical excitation. The latter should enable us to gain a more detailed understanding of the spin relaxation processes in our devices. They are also the first step towards future time-resolved spin manipulation experiments. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2003
J. H. Lee
Abstract Impurity free vacancy disordering (IFVD) of InGaAs self-assembled quantum dots (SAQDs) grown by metal organic chemical vapor deposition (MOCVD) method has been carried out at 700,°C for the time range from 1 min to 4 min by using SiO2 and SiNx,SiO2 dielectric capping layers. The photoluminescence (PL) peak was blue shifted up to 157 meV and its full width at half maximum (FWHM) was narrowed from 76 meV to 47 meV as the annealing time increased. The integrated PL intensity was increased after the thermal annealing, which may be attributed to a defect quenching. There was an optimum annealing condition to get the largest integrated PL intensity for each dielectric capping. SiNx,SiO2 double capping layers have been found to induce larger integrated PL intensity and better carrier confinement after the thermal annealing of SAQDs compared to SiO2 single capping layer, even though SiNx,SiO2 double capping induced larger blue-shift than SiO2 single capping. [source]