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Ion Milling (ion + milling)

Distribution by Scientific Domains

Polymers and Materials Science	66%

Selected Abstracts

Direct Scanning Electron Microscopy Imaging of Ferroelectric Domains After Ion Milling

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 1 2010
Daniel Grüner
A method for directly observing the ferroelectric domain structure by scanning electron microscopy after argon ion milling has been established. Its advantages are exemplified by exposing the domain structure in three widely used ferroelectric ceramics, BaTiO3, (Na,K)NbO3, and Pb(Ti,Zr)O3. Stable high-resolution images revealing domains with widths <30 nm have been obtained. The domain contrast is caused by electron channeling and is strongly dependent on the sample tilt angle. Owing to a strain- and defect-free surface generated by gentle ion milling, pronounced orientation contrast is observed. [source]

Nanotube Arrays: Morphology Control of Nanotube Arrays (Adv. Mater.

ADVANCED MATERIALS, Issue 29 2009
29/2009)
On p. 2983 Michael J. Brett and co-workers demonstrate a template-directed technique to produce arrays of silicon nanotubes (SiNTs) with highly engineerable morphology. Fabrication steps include glancing angle deposition (GLAD) of the templates, low-pressure CVD of a shell-Si coating, ion milling to expose the templates, and wet-chemical etching for removal of the templates. The technique may be generally adapted to a wide variety of morphologies and NT materials. [source]

Syntheses of Porous Self-Supporting Metal-Nanoparticle Assemblies with 3D Morphologies Inherited from Biosilica Templates (Diatom Frustules)

ADVANCED MATERIALS, Issue 4 2009
Zhihao Bao
Porous 3D metal-nanoparticle assemblies with selectable morphologies are synthesized. Biosilica templates (diatom frustules) are first converted into silicon replicas via magnesiothermic reduction. Electroless metal deposition, followed by silicon dissolution, then yields metal-nanoparticle assemblies with the 3D template morphology (figure reveals a silver assembly; inset images reveal internal features after partial ion milling and EDX analysis). [source]

Direct Scanning Electron Microscopy Imaging of Ferroelectric Domains After Ion Milling

Critical current of Nb and NbN thin-film structures: The cross-section dependence

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2005
K. Il'in
Abstract We present results of a systematic study of the critical current in superconducting Nb and NbN thin film bridges. The bridges with a width from 50 nm to 10 µm were patterned from thin superconducting films by means of electron-beam lithography and ion milling. For both materials the nominal critical current density extrapolated to zero temperature varied with the bridge width and thickness. We attribute these variations to a fabrication-enhanced reduction of the effective, superconducting cross-section of the bridges with respect to their geometric cross-section and to an uneven distribution of the super-current over the superconducting core of the bridge. In very thin bridges, i.e. 5 nm and 8 nm for NbN and Nb, respectively, the nominal current density increased drastically when the bridge width became smaller than 500 nm. We associate the enhancement of the critical current density in narrow bridges with the crossover from depinning of magnetic vortices to either their nucleation or breaking of Cooper pairs. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Properties of MBE CdxHg1,xTe/GaAs structures modified by ion-beam milling

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2004
V. V. Bogoboyashchyy
Abstract Modification of electrical properties of n - and p -type MBE mercury,cadmium-telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1,xTe electrical properties modification with such treatment also hold for MBE MCT structures in comparison with bulk samples. It is shown that a significant decrease of the p,n conversion rate for such structures in comparison with homogeneous bulk samples at other equal conditions is caused by the presence of the wide band gap passivation layer. The diffusion-like character of the p,n conversion front movement is confirmed. The nature of additional "heavy" electrons in MBE structures is proposed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]