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Homoepitaxial Growth (homoepitaxial + growth)

Distribution by Scientific Domains
Physics and Astronomy60%

Selected Abstracts

Cover Picture: Direction-Dependent Homoepitaxial Growth of GaN Nanowires (Adv. Mater.

ADVANCED MATERIALS, Issue 2 2006
2/2006)
Abstract GaN nanowires with vastly different morphologies depending upon their growth direction can be produced by direct nitridation and vapor transport of Ga in disassociated ammonia, report Sunkara and co-workers on p.,216. Nanowires grown along the c -direction develop hexagonal-prism island morphologies, while wires grown along the a -direction form uniform, belt-shaped morphologies. A "ballistic" phenomenon involving the 1D transport of adatoms on the non-polar surfaces of <0001> GaN nanowires is proposed to explain the prismatic island morphologies. [source]

Direction-Dependent Homoepitaxial Growth of GaN Nanowires,

ADVANCED MATERIALS, Issue 2 2006
H. Li
GaN nanowires with vastly different morphologies depending upon the growth direction are produced by direct nitridation and vapor transport of Ga in disassociated ammonia. Nanowires grown homoepitaxially along the c -direction develop hexagonal-prism island morphologies (see Figure, left, and Cover), while wires grown along the a -direction form uniform, belt-shaped morphologies (Figure, right). A "ballistic" transport phenomenon for adatoms is proposed to explain the observed prismatic island morphologies. [source]

Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 9 2009
G. Frangieh
Abstract In this work, we present a study about the homoepitaxial growth of phosphorus-doped diamond on (100) substrates. The growth was performed by microwave plasma assisted chemical vapor deposition (MPCVD) adding an organic precursor for phosphorus (tertiarybutylphosphine: TBP) in the gaseous phase. We show that phosphorus is incorporated in (100) chemical vapor deposition (CVD) diamond as proved by secondary ion mass spectrometry (SIMS). The recombination of excitons bound to phosphorus donors is observed by cathodoluminescence (CL) spectroscopy. The influence of the growth parameters on the phosphorus donor activity is investigated. We show that the [C*]/[H2] ratio is a key parameter for controlling the P-donor activity when diamond is grown on (100) surfaces. [source]

Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2008
Hiroyuki Nagasawa
Abstract The planar defect density of 3C-SiC can be reduced by growing it on undulant-Si substrates. However, specific stacking faults (SFs) remain, that expose the Si-face on the (001) surface. These residual SFs increase the leakage current in devices made with 3C-SiC. They can be eliminated using an advanced SF-reduction method called switch-back epitaxy (SBE) that combines polarity conversion with homoepitaxial growth. Vertical metal,oxide,semiconductor field-effect-transistors (MOSFETs) are fabricated on 3C-SiC with SBE, varying in size from a single cell with an area of (30 × 30) ,m2 to 12,000 hexagonal cells on a (3 × 3) mm2 chip. The MOSFET characteristics suggest that currents greater than 100 A are realistic for blocking voltages of 600,1,200 V by increasing the number of cells with reduced cell-pitch. The combination of blocking voltage capability with a demonstrable high current capacity shows that 3C-SiC is well-suited for use in vertical MOSFETs for high- and medium-power electronic applications. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Investigation of ZnO substrates: effects of high temperature annealing

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2007
S. Graubner
Abstract In order to promote growth of ZnO films on ZnO substrates, defects introduced by the surface polishing procedure have to be removed. We investigate the influence of high temperature annealing in O2 -atmosphere on the structural properties of the ZnO substrates by atomic force microscopy. Only at temperatures above 1100 °C atomic steps (terraces) are seen, the remaining defects can be assigned to dislocations in a density between 104 to 105 cm,2. Interestingly the electrical properties also change from high resistive to n-type conduction, which make the substrates , apart for the homoepitaxial growth on a perfect template , suitable for top-to-bottom contacts. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]