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High Electron Mobility (high + electron_mobility)

Distribution by Scientific Domains
Polymers and Materials Science40%
Physics and Astronomy30%

Terms modified by High Electron Mobility

  • high electron mobility transistor
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    Selected Abstracts

    High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

    ADVANCED MATERIALS, Issue 16 2009
    Claudia Piliego
    Bottom-contact n-channel OFETs based on spin-coated films of N,N, -1H,1H -perfluorobutyl dicyanoperylenediimide (PDI-FCN2) exhibit a saturation-regime mobility of 0.15,cm2 V,1 s,1 in vacuum and good air stability. These performances are attributed to the high crystallinity and to the edge-on orientation promoted by the thermal treatment, as showed by confocal laser microscopy. [source]

    High Electron Mobility in Room-Temperature Discotic Liquid-Crystalline Perylene Diimides,

    ADVANCED MATERIALS, Issue 21 2005
    Z. An
    Perylene diimide discotic columnar liquid-crystalline mesophases (see Figure) can show very high electron mobilities under ambient conditions. While the mobilities are strongly dependent on sample morphology and processing conditions, mobilities as high as 1.3,cm2,V,1,s,1 are measured, greater than that of amorphous silicon. [source]

    Acenaphtho[1,,2- c]phosphole P -Oxide: A Phosphole,Naphthalene ,-Conjugated System with High Electron Mobility

    CHEMISTRY - A EUROPEAN JOURNAL, Issue 39 2009
    Arihiro Saito
    One order of magnitude: Naphthalene- and acenaphthene-fused phosphole P -oxides (see figure) are shown to have reasonably high thermal and electrochemical stabilities and electron-accepting ability. The electron mobility of the naphthalene-fused phosphole P -oxide is about one order higher than that of tris(8-hydroxyquinoline)aluminium(III) Alq3 at any given electric field. [source]

    High Electron Mobility in Room-Temperature Discotic Liquid-Crystalline Perylene Diimides,

    ADVANCED MATERIALS, Issue 21 2005
    Z. An
    Perylene diimide discotic columnar liquid-crystalline mesophases (see Figure) can show very high electron mobilities under ambient conditions. While the mobilities are strongly dependent on sample morphology and processing conditions, mobilities as high as 1.3,cm2,V,1,s,1 are measured, greater than that of amorphous silicon. [source]

    Phase effects in HgTe quantum structures

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2007
    M. König
    Abstract HgTe quantum well structures with high electron mobilities have been used to fabricate quantum interference devices. Aharonov-Bohm oscillations have been studied in the low and high magnetic field regime. In the latter case a decrease of the effective ring radius is observed. Additionally, as a consequence of the strong Rashba spin-orbit coupling within this material, it was possible to observe conductance oscillations which are due to the so-called Aharonov-Casher effect. These quantum interference effects are effectively controlled by the applied magnetic and electric field. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Structure,Property Relationship of Pyridine-Containing Triphenyl Benzene Electron-Transport Materials for Highly Efficient Blue Phosphorescent OLEDs

    ADVANCED FUNCTIONAL MATERIALS, Issue 8 2009
    Shi-Jian Su
    Abstract Three triphenyl benzene derivatives of 1,3,5-tri(m -pyrid-2-yl-phenyl)benzene (Tm2PyPB), 1,3,5-tri(m -pyrid-3-yl-phenyl)benzene (Tm3PyPB) and 1,3,5-tri(m -pyrid-4-yl-phenyl)benzene (Tm4PyPB), containing pyridine rings at the periphery, are developed as electron-transport and hole/exciton-blocking materials for iridium(III) bis(4,6-(di-fluorophenyl)pyridinato- N,C2,)picolinate (FIrpic)-based blue phosphorescent organic light-emitting devices. Their highest occupied molecular orbital and lowest unoccupied molecular orbital (LUMO) energy levels decrease as the nitrogen atom of the pyridine ring moves from position 2 to 3 and 4; this is supported by both experimental results and density functional theory calculations, and gives improved electron-injection and hole-blocking properties. They exhibit a high electron mobility of 10,4,10,3,cm2,V,1,s,1 and a high triplet energy level of 2.75,eV. Confinement of FIrpic triplet excitons is strongly dependent on the nitrogen atom position of the pyridine ring. The second exponential decay component in the transient photoluminescence decays of Firpic-doped films also decreases when the position of the nitrogen atom in the pyridine ring changes. Reduced driving voltages are obtained when the nitrogen atom position changes because of improved electron injection as a result of the reduced LUMO level, but a better carrier balance is achieved for the Tm3PyPB-based device. An external quantum efficiency (EQE) over 93% of maximum EQE was achieved for the Tm4PyPB-based device at an illumination-relevant luminance of 1000,cd,m,2, indicating reduced efficiency roll-off due to better confinement of FIrpic triplet excitons by Tm4PyPB in contrast to Tm2PyPB and Tm3PyPB. [source]

    Cover Picture: phys. stat. sol. (RRL) 1/2007

    PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 1 2007
    Article first published online: 6 NOV 200
    In the Rapid Research Letter on p. R37 Musubu Ichikawa et al. report very high electron mobility above 10,3 cm2/Vs in the electron transporting material bipyridyl substituted oxadiazole (Bpy-OXD). These favourable electrical properties make the amorphous molecular semiconductor promising for potential applications in organic light-emitting diodes (OLEDs), flatpanel displays and lighting. The authors also give reasons , by means of computational chemistry , why this planar material forms stable amorphous solid films. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2004
    C. Skierbiszewski
    Abstract Influence of growth conditions in plasma assisted molecular beam epitaxy on quality of GaN layers and GaN/AlGaN heterojunctions is studied. The growth diagram for step-flow growth mode and different nitrogen flux is presented. The low defect density of bulk GaN substrates together with very low impurity background concentrations resulted in high electron mobility for GaN/AlGaN heterojunctions: 109,000 cm2/Vs at 1.5 K, and 2500 cm2/Vs at 295 K. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Thin-film silicon solar cell technology

    PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 2-3 2004
    A. V. Shah
    Abstract This paper describes the use, within p,i,n - and n,i,p -type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (,c-Si:H) thin films (layers), both deposited at low temperatures (200°C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i -layers are described. These properties are linked to the microstructure and hence to the i -layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p,i,n -type solar cells, as fabricated so far, are compared in their key parameters (Jsc, FF, Voc) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the ,c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of other PV technologies. Copyright © 2004 John Wiley & Sons, Ltd. [source]

    InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments

    BELL LABS TECHNICAL JOURNAL, Issue 3 2009
    Nils Weimann
    The capacity of fiber-optic telecommunication systems can be increased by higher data rate signaling. We present key analog and digital circuits which find application as building blocks in future very high data rate systems. The circuits are fabricated in our indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The physical properties of the InP material system, notably high breakdown and high electron mobility, enable functions that are not accessible with current silicon-based high-speed technologies, including SiGe. Device and circuit results are presented, and we report on transmission system experiments conducted with these InP DHBT circuits. © 2009 Alcatel-Lucent. [source]