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Helicon-wave-excited Plasma Sputtering (helicon-wave-excited + plasma_sputtering)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006
Mutsumi Sugiyama
Abstract Sputtering deposition of Ga-doped ZnO (ZnO:Ga) thin films was carried out using the helicon-wave-excited plasma sputtering (HWPS) method. The films sputtered above 150 °C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250 °C, the electron mobility was limited to as low as 2,3 cm2/V s due to the small grain size (,25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Fabrication of a n -type ZnO/p -type Cu,Al,O heterojunction diode by sputtering deposition methods

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009
Satoru Takahata
Abstract CuAlO2 polycrystalline films were deposited by the helicon-wave-excited plasma sputtering (HWPS) method at 700 °C. The best full-width at half-maximum value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was similar to those reported previously using other deposition methods. While, noncrystalline Cu,Al,O films were deposited by a conventional RF sputtering method. Using this p -type transparent conducting oxide (TCO) film and an n -type ZnO film deposited by HWPS, a n -type ZnO/p -type Cu,Al,O heterojunction diode was fabricated. Optical transmittance of the device was approximately 80% in the near infrared region. The rectifying current,voltage characteristics with a threshold forward voltage approximately 1.4 V were obtained. These results are the first step toward realizing an electrical/optical device using p -type CuAlO2 or Cu-Al-O films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009
Shingo Masaki
Abstract Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface. The results indicate that CdS-free Cu(In,Ga)Se2 -based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In,Ga)Se2 layer using the HWPS method. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]