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Amplifier Design (amplifier + design)
Selected AbstractsStudy of the influence of bias and matching networks on the distortion and memory of FET-based power amplifiersINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 6 2008Jon Santiago Abstract A study of the influence of bias and matching networks on the distortion and memory in FET-based power amplifiers has been carried out at the device and amplifier circuit levels. The study includes simulated and experimental results that allow us to identify effects produced by the introduction of particular biasing and matching networks in the power amplifier design. The influence of the bias point, as well as of biasing and matching network topologies on the nonlinear, short- and long-term memory behavior has been studied by means of simulations and measurements, using different power amplifier prototypes. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008. [source] Alternative approach to low-noise amplifier design for ultra-wideband applicationsINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 2 2007Qiang Li Abstract Conventional ultra-wideband low-noise amplifiers require a flat gain over the entire 3.1,10.6 GHz bandwidth, which severely restraints the trade-off spaces in low noise amplifier design. This article proposes a relaxed gain-flatness requirement based on system level investigations. Considering the wireless transceiver front-end with antenna and propagation channel, the unflat-gain low-noise amplifier with an incremental gain characteristic does not degrade the performance of overall system. As an alternative to its flat-gain counterpart, the proposed unflat gain requirement tolerates gain ripple as large as 10 dB, which greatly eases the design challenges to low-noise amplifier for ultra-wideband wireless receivers. Two low-noise amplifier examples are given to demonstrate the feasibility and design flexibility under the proposed gain-flatness requirement. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007. [source] Nonlinear approaches to the design of microwave power amplifiersINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 6 2004Paolo Colantonio Abstract Commonly used approaches for the design of power amplifiers (PAs), specifically in the microwave and millimeter-wave frequency range, are reviewed and discussed. Measurement-based techniques are compared with CAD-based approaches, stressing their relative strengths and weaknesses. Simplified techniques are also discussed, particularly addressing the preliminary evaluation of the power capabilities of a given device and to gather physical insight into the power-generating mechanisms. Finally, harmonic tuning for high-efficiency power amplifier design is outlined, together with its basic application rules. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 493,506, 2004. [source] Application of a rat-race coupler in low-cost load and source pull transistor amplifier designMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2009Slawomir Gruszczy Abstract A method for load and source pull is proposed in which rat-race couplers with sections of shorted transmission lines are used. It is shown that the connection of a rat-race coupler with two shorted transmission lines allows for realization of any desired impedance, thus, allowing for effective transistor matching and, therefore, achieving maximum output power. Both theoretical analysis and experimental results are presented showing usefulness of the proposed technique. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2537,2541, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24668 [source] | ||||||||||