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Amorphous Semiconductors (amorphous + semiconductor)

Distribution by Scientific Domains

Polymers and Materials Science	80%

Selected Abstracts

ta-C/Si heterojunction diodes with apparently giant ideality factors

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010
Marc Brötzmann
Abstract A common feature of many wide band gap heterojunction diodes is an unexplained large ideality factor n > 2. In this context we investigate the diode characteristics of heterojunction diodes consisting of a crystalline semiconductor material such as Si covered with a thin semiconducting film of amorphous or disordered material. As thin amorphous film we use tetrahedral amorphous carbon (ta-C). These heterojunctions exhibit a pronounced rectifying behavior, low saturation current and low parasitic currents. Moreover, we observe an apparently giant ideality factor reaching values of n > 75. As a consequence, the turn on voltage is around 3 , 10 V and the I-V curves can be measured for bias up to 40 V without reaching saturation or electrical breakdown. We present a quantitative model for the unusual diode characteristics of these Metal , Amorphous Semiconductor , Semiconductor diodes (MASS-diodes). We demonstrate that the I-V characteristics of the heterojunctions are well described by a serial arrangement of an ideal Schottky-diode, a Frenkel-Poole type resistance and an Ohmic contact resistance, emulating a p-n- or Schottky diode characteristic with giant ideality factor and referred to as the FPID-model. We propose that heterojunctions exhibiting apparently large ideality factors n , 2 may possess an interfacial disordered or amorphous layer with Frenkel-Poole conduction properties. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Back Cover: Fundamentals of Metal-induced Crystallization of Amorphous Semiconductors (Adv. Eng.

ADVANCED ENGINEERING MATERIALS, Issue 3 2009
Mater.
The Backcover shows a covering layer of aluminum lowers the crystallization temperature of amorphous silicon (a-Si). First the a-Si covers ("wets") the grain boundaries in the aluminum layer (Al). Once the wetting a-Si film has reached a critical thickness, crystallization starts at the grain boundaries. More details can be found in the article by E. J. Mittemeijer on page 131. [source]

Fundamentals of Metal-induced Crystallization of Amorphous Semiconductors

ADVANCED ENGINEERING MATERIALS, Issue 3 2009
Zumin Wang
Abstract A general, quantitative model has been developed that provides fundamental understanding of the metal-induced crystallization (MIC) of amorphous semiconductors. Interface thermodynamics has been shown to play a decisive role for the whether or not occurrence of MIC. The model has been employed to predict the MIC temperature for various metal/amorphous-semiconductor systems. A consequence of the model is the prediction that the thickness of an ultrathin, pure Al film put on the top of an amorphous Si layer can be used as a very accurate tool to tune the crystallization temperature of amorphous Si. These theoretical predictions have been confirmed experimentally. The fundamental understanding reached may lead to pronounced technological progress in the low-temperature manufacturing of crystalline-Si-based devices deposited on cheap and flexible substrates such as glasses, plastics, and possibly even papers. [source]

Fiber Field-Effect Device Via In Situ Channel Crystallization

ADVANCED MATERIALS, Issue 37 2010
Sylvain Danto
The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics. [source]