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Growth Pressure (growth + pressure)
Selected AbstractsWHY DO COMMUNITIES MOBILIZE AGAINST GROWTH: GROWTH PRESSURES, COMMUNITY STATUS, METROPOLITAN HIERARCHY, OR STRATEGIC INTERACTION?JOURNAL OF URBAN AFFAIRS, Issue 1 2009MAI THI NGUYEN ABSTRACT:,Findings from this study challenge the conventional wisdom about the motivations for local growth control. Using data of California ballot box growth controls merged with city level demographic and housing data from the U.S. Census Bureau, logit models are estimated to test four hypotheses for why communities mobilize against growth. Of the four hypotheses, growth pressures, community status, metropolitan hierarchy, and strategic interaction, the only hypothesis that was strongly supported by the logistic regression analyses was strategic interaction. Support for the strategic interaction hypothesis reveals that jurisdictions located in regions where growth control policies are more abundant have a higher probability of mobilizing against growth. In other words, jurisdictions' growth control policies influence the growth decisions made by neighboring jurisdictions within the same region. One of the most surprising findings in the logistic regression analyses is that low-income suburbs are significantly more likely to mobilize against growth than high-income suburbs. These results refute the commonly held belief that growth control is strictly a concern of elite communities and suggest that residents of low-income suburbs may be turning to the ballot box to control growth because their communities are the locations of choice for noxious land uses. [source] MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substratesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2008Muhammad Jamil Abstract This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575,650 °C and >3 × 105, respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ,0.3 nm on 2 ,m × 2 ,m area, while the RMS roughness of the InN film grown on GaN/Si (111) templates is found as ,0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN (0002) , rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Morphology control of GaN nanowires by vapor-liquid-solid growthPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008Y. Inoue Abstract We synthesized GaN nanowires on sapphire substrate by metal organic chemical vapour deposition. The GaN nanowires were grown via vapor-liquid-solid (VLS) growth catalyzed with Ni thin film. Shape of nanowires depended on the substrate temperature and the growth pressure. The wire-like structure with high aspect ratio changed into the tapered structure with increasing substrate temperature, and with increasing the growth pressure. This dependency was attributed to the change of the surface diffusion length of source atoms. The VLS growth of GaN nanowire was revealed that the source species, absorbed at the eutectic droplet, came along the side wall of the nanowire as well as other semiconductor nanowires. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPEPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007Tetuso Narita Abstract The diffusion of Ga species in gas phase as well as on the surface are studied in selective area growth of AlGaN in low pressure metalorganic vapor phase epitaxy. The experiments were performed on a trapezoidal stripe with (0001) facet on the top and (1-101) facet on the sides. It was found that the ridge growth on the facets were sensitive to the growth pressure, in agreement with numerical results. At a low pressure of 100 Torr, we got a uniform thickness of AlGaN alloy, but the alloy composition was not uniform. Exponential variation of the composition gave the effective diffusion length of Ga on the order of 0.7 ,m which was independent of the growth pressure. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Jobs, Houses, and Trees: Changing Regional Structure, Local Land-Use Patterns, and Forest Cover in Southern IndianaGROWTH AND CHANGE, Issue 3 2003Darla K. Munroe Land-use and -cover change is a topic of increasing concern as interest in forest and agricultural land preservation grows. Urban and residential land use is quickly replacing extractive land use in southern Indiana. The interaction between land quality and urban growth pressures is also causing secondary forest growth and forest clearing to occur jointly in a complex spatial pattern. It is argued that similar processes fuel the abandonment of agricultural land leading to private forest regrowth, changes in topography and land quality, and declining real farm product prices. However, the impact of urban growth and development on forests depends more strongly on changes in both the residential housing and labor markets. Using location quotient analysis of aggregate employment patterns, and the relationship between regional labor market changes, the extent of private forest cover was examined from 1967 to 1998. Then an econometric model of land-use shares in forty southern Indiana counties was developed based on the net benefits to agriculture, forestland, and urban uses. To test the need to control explicitly for changes in residential demand and regional economic structure, a series of nested models was estimated. Some evidence was found that changing agricultural profitability is leading to private forest regrowth. It was also uncovered that the ratio of urban to forest land uses is better explained by incorporating measures of residential land value and industrial concentration than simply considering population density alone. [source] WHY DO COMMUNITIES MOBILIZE AGAINST GROWTH: GROWTH PRESSURES, COMMUNITY STATUS, METROPOLITAN HIERARCHY, OR STRATEGIC INTERACTION?JOURNAL OF URBAN AFFAIRS, Issue 1 2009MAI THI NGUYEN ABSTRACT:,Findings from this study challenge the conventional wisdom about the motivations for local growth control. Using data of California ballot box growth controls merged with city level demographic and housing data from the U.S. Census Bureau, logit models are estimated to test four hypotheses for why communities mobilize against growth. Of the four hypotheses, growth pressures, community status, metropolitan hierarchy, and strategic interaction, the only hypothesis that was strongly supported by the logistic regression analyses was strategic interaction. Support for the strategic interaction hypothesis reveals that jurisdictions located in regions where growth control policies are more abundant have a higher probability of mobilizing against growth. In other words, jurisdictions' growth control policies influence the growth decisions made by neighboring jurisdictions within the same region. One of the most surprising findings in the logistic regression analyses is that low-income suburbs are significantly more likely to mobilize against growth than high-income suburbs. These results refute the commonly held belief that growth control is strictly a concern of elite communities and suggest that residents of low-income suburbs may be turning to the ballot box to control growth because their communities are the locations of choice for noxious land uses. [source] Characterization of Sb-doped CuInS2 crystalsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2003H. Komaki Abstract CuInS2 semiconductor crystals were successfully grown by a hot-press (HP) method at 400,700,°C for 1,h at growth pressures from 10 to 100 MPa. The samples were 20 mm in diameter. The samples grown at 700,°C were found to be of chalcopyrite structure, nearly stoichiometric and n-type by means of X-ray diffraction, electron probe microanalysis and thermoprobe analysis, respectively. A donor,acceptor pair emission band was observed in the photoluminescence spectra at 10 K, indicating that the samples had both donor and acceptor impurity types. It was also found that p-type CuInS2 crystals could be obtained by Sb doping. It was suggested that the Sb atoms in the S site might enhance p-type conductivity. [source] | |||||||||||||