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Alloy Thin Films (alloy + thin_film)

Distribution by Scientific Domains
Polymers and Materials Science71%

Selected Abstracts

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

ADVANCED MATERIALS, Issue 5 2009
Morito Akiyama
A high-temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (ScxAl1,,,xN) alloy thin films, and the use of dual cosputtering, which leads to nonequilibrium alloy thin films. [source]

Preparation of Pt,Ru Alloyed Thin Films Using a Single-Source CVD Precursor,

CHEMICAL VAPOR DEPOSITION, Issue 3 2003
S.-F. Huang
Abstract Treatment of (dimethylaminomethyl)ruthenocene with cis -Pt(DMSO)2Cl2 led to the formation of a ruthenocenyl platinum complex [CpRu(,5 -C5H3CH2NMe2)Pt(DMSO)Cl] (1); subsequent treatment of 1 with [Na(hfac)] afforded an air-stable Pt,Ru complex [CpRu(,5 -C5H3CH2NMe2)Pt(hfac)] (2). Its volatility and other physical data relevant to CVD experiments were assessed by thermogravimetric analysis (TGA). The Pt,Ru thin films were then deposited at two deposition temperatures, 300,°C and 400,°C, using O2 as the reactive carrier gas. The as-deposited thin films were characterized using energy dispersive X-ray (EDX), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD). Results indicated the formation of a homogeneous Pt,Ru solid solution at the lower deposition temperature. However, upon raising the temperature to 400,°C, phase separation between Pt and Ru occurred, which then induced the growth of RuO2 grains at the substrate surface and caused depletion of the alloy in ruthenium. The electrocatalytic activities of the films, in respect of methanol oxidation, were investigated, in half-cell experiments, by cyclic voltammetry. [source]

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

ADVANCED MATERIALS, Issue 5 2009
Morito Akiyama
A high-temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (ScxAl1,,,xN) alloy thin films, and the use of dual cosputtering, which leads to nonequilibrium alloy thin films. [source]

The wet corrosion of molybdenum thin film , Part III: The effect of Ti and Nb

MATERIALS AND CORROSION/WERKSTOFFE UND KORROSION, Issue 5 2006
C. R. Tomachuk
Abstract Magnetron sputtering has become the process of choice for the deposition of a wide range of industrially important coatings. Over the last decade, interest in molybdenum thin films prepared by magnetron sputtering has been increasing; however, little research has been done on molybdenum-titanium and molybdenum-niobium alloy thin films. During the current study, electrochemical impedance spectroscopy (EIS) was employed to investigate the effect on the corrosion resistance in basic chloride environments of adding titanium and niobium species to molybdenum thin films deposited by physical vapor deposition. The results indicate that the MoTi alloy thin films exhibit better protective properties than either the molybdenum-niobium alloy or unalloyed molybdenum thin films. [source]

Properties of Ga2O3 -based (Inx Ga1,x)2O3 alloy thin films grown by molecular beam epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008
Takayoshi Oshima
Abstract A series of Ga2O3 -based (Inx Ga1,x)2O3 alloy thin films have been grown on c-plane sapphire substrates with a thin Ga2O3 buffer layer by plasma-assisted molecular beam epitaxy. At growth temperatures of 700 °C and higher, even with a slight inclusion of In2O3 to Ga2O3, for example, the film of (In0.08Ga0.92)2O3, exhibited a rough surface and degraded transmission spectrum resulting from phase separation of In2O3. Due to low temperature growth at 600 °C, however, the phase separation was suppressed for the In composition up to 35%, which was confirmed by X-ray diffraction measurement, and the films exhibited high transmittance over 85% with sharp absorption edges. The bandgap could be tuned form 5.0 to 4.0 eV. The results encourage the application of (Inx Ga1,x)2O3 thin films in short-wavelength optical devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]