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GaN Nanorods (gan + nanorod)
Selected AbstractsThree-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2009Sönke Fündling Abstract Three-dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN-based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silicon substrates with deep etched nanopillars to control the GaN nanorods growth by varying the size and distance of the Si pillars. The small footprint of GaN nanorods grown on Si pillars minimise the influence of the lattice mismatched substrate and improve the material quality. For the Si pillars an inductively coupled plasma dry-etching process at cryogenic temperature has been developed. An InGaN/GaN multi quantum well (MQW) structure has been incorporated into the GaN nanorods. We found GaN nanostructures grown on top of the silicon pillars with a pyramidal shape. This shape results from a competitive growth on different facets as well as from surface diffusion of the growth species. Spatially resolved optical properties of the structures are analysed by cathodoluminescence. Strongly spatial-dependent MQW emission spectra indicate the growth rate differences on top of the rods. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growthPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010Shunfeng Li Abstract GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Molecular-beam epitaxy fabrication and analysis of GaN nanorods on patterned silicon-on-insulator substratePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008J. U. Seo Abstract GaN nanorods field emission arrays (FEAs) were fabricated on patterned silicon-on-insulator substrates with 10×10 ,m2 and 1×1 ,m2 periodic-windows by molecular beam epitaxy. Their morphologies and field emission characteristics were investigated. FEAs fabricated on the 1×1 ,m2 periodic-window substrates exhibited lower threshold electric field of 2.6 V/,m, higher field emission current density of 10,3 A/cm2 and higher field enhancement factor of 1685 than those for the FEAs fabricated on the 10×10 ,m2 periodic-window substrates in spite of the reduced active areas. The improved field emission characteristics for the FEAs with smaller area periodic-window are considered to be due to the edge effect at the patterned area. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||