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GaAs Nanowires (gaa + nanowire)
Selected AbstractsHigh Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization,ADVANCED FUNCTIONAL MATERIALS, Issue 23 2008Hannah J. Joyce Abstract We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III,V nanowires. [source] GaAs nanowires grown by MOVPEPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2010Jens Bauer Abstract GaAs nanowire (NW) growth was studied by metal-organic vapour phase epitaxy (MOVPE). The vapour,liquid,solid (VLS) mechanism with gold-based alloy particles and the selective-area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied. A special focus is set on thermodynamic aspects of the VLS process. The alloy particle formation and the influence of MOVPE growth parameters on the growth rate and the GaAs NW morphology are examined. Furthermore, the improvement of the real structure with particular interest on the twin formation is studied. Besides the commonly used continuous VLS growth mode also a pulsed VLS growth mode with alternating precursor supply is reported. Based on photoluminescence measurements the effect of strain in core/shell NW structures is confirmed. For the SAG mechanism the MOVPE growth parameters are determined and the real structure is described. [source] High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization,ADVANCED FUNCTIONAL MATERIALS, Issue 23 2008Hannah J. Joyce Abstract We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III,V nanowires. [source] Cover Picture: Photolithographic Route to the Fabrication of Micro/Nanowires of III,V Semiconductors (Adv. Funct.ADVANCED FUNCTIONAL MATERIALS, Issue 1 2005Mater. Abstract The cover shows a patterned assembly of GaAs nanowires with their ends tethered to a bulk single-crystal wafer as described on p.,30 by Rogers and co-workers. These wires, which have triangular cross-sections, were fabricated via a top,down process that combines photolithography and anisotropic chemical etching. Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross-sections can be fabricated by "top,down" approaches that combine lithography of high-quality bulk wafers (using either traditional photolithography or phase-shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free-standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This "top,down" approach provides a simple, effective, and versatile way of generating high-quality single-crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing. [source] Critical diameters and temperature domains for MBE growth of III,V nanowires on lattice mismatched substratesPHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 4 2009G. E. Cirlin Abstract We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au-assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation-free III,V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] GaAs nanowires grown by MOVPEPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2010Jens Bauer Abstract GaAs nanowire (NW) growth was studied by metal-organic vapour phase epitaxy (MOVPE). The vapour,liquid,solid (VLS) mechanism with gold-based alloy particles and the selective-area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied. A special focus is set on thermodynamic aspects of the VLS process. The alloy particle formation and the influence of MOVPE growth parameters on the growth rate and the GaAs NW morphology are examined. Furthermore, the improvement of the real structure with particular interest on the twin formation is studied. Besides the commonly used continuous VLS growth mode also a pulsed VLS growth mode with alternating precursor supply is reported. Based on photoluminescence measurements the effect of strain in core/shell NW structures is confirmed. For the SAG mechanism the MOVPE growth parameters are determined and the real structure is described. [source] Structural stability of clean GaAs nanowires grown along the [111] directionPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010Rita Magri Abstract Using a first-principles approach we have calculated the formation energies of small diameter GaAs nanowires (NWs) with both zinc-blende and wurtzite structure grown along the [111] direction. The section of the wires is hexagonal and the side facets are oriented either {11-20} and {10-10} in the case of the wurtzite structure, and {110} and {112} for the zinc-blende structure. The formation energy of the nanowires as a function of their radius is then interpreted in terms of a model in which the energy contributions from the bulks, the flat surfaces and the ridges are taken explicitly into account. We find that the nanowire stability is mainly explained by the competition between the bulk energy, favoring the zincblende structure and the surface energies favoring the wurtzite structure. We find also that the directly calculated formation energies of some small diameter wurtzite NWs can be reproduced by our model taking into account only the bulk and flat surface contributions. That is, the ridges do not contribute substantially to the nanowire formation energy. Inspection of the ridge structure and band structure reveals that this good agreement occurs when the NWs are semiconducting and the ridges do not add more dangling bonds to the surface with respect to those provided by the sidewalls. Within our model we find the critical diameter for the wurtzite-zinc-blende transition at 6.3 nm. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||