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Film Deposition (film + deposition)
Kinds of Film Deposition Selected AbstractsAligning Single-Walled Carbon Nanotubes By Means Of Langmuir,Blodgett Film Deposition: Optical, Morphological, and Photo-electrochemical StudiesADVANCED FUNCTIONAL MATERIALS, Issue 15 2010Gabriele Giancane Abstract An alkoxy-substituted poly(phenylene thiophene) is used in order to suspend single-walled carbon nanotubes in an organic solvent. The suspension is spread on the air,water interface of a Langmuir trough and the floating film is characterized by means of Brewster angle microscopy and UV-visible reflection spectroscopy and the compression isotherm is recorded. The polymer/carbon-nanotube blend is transferred onto different substrates using the Langmuir,Blodgett technique. AFM measurements indicate the formation of globular structures for the samples transferred at low surface-pressure values and a tubular morphology for high-pressure-deposited samples. AFM analysis is repeated on a sample exposed to soft X-rays for about 5,h and a highly organized structure of bundles of carbon nanotubes rises up. Samples with different numbers of layers are transferred onto ITO substrates by means of the Langmuir,Blodgett method and are tested as photocathodes in a photo-electrochemical cell. A Voc of 0.18,V, an Isc of 85.8,mA, FF of 40.0%, and , of (6.23,×,10,3)% are obtained. [source] Peculiarities of Electrochemical Bismuth Film Formation in the Presence of Bromide and Heavy Metal IonsELECTROANALYSIS, Issue 15 2009Giedr, Grincien Abstract Bi films were deposited on glassy carbon electrode from solutions with and without KBr. The morphology of both types of the films was characterized by scanning electron microscopy (SEM), and their electrochemical behavior was studied by square wave (SWV) and cyclic voltammetry (CV). Bi films were also co-deposited with common analyte-heavy-metals in the presence of KBr and these films also were characterized by SEM, SWV and CV in order to understand the formation of the mixed metal films. All films studied had a different morphology. Bromide addition made the Bi films more compact and uniform, whereas Pb catalyzed Bi film deposition. [source] Influence of Dielectric Surface Chemistry on the Microstructure and Carrier Mobility of an n-Type Organic SemiconductorADVANCED FUNCTIONAL MATERIALS, Issue 15 2009Parul Dhagat Abstract This paper examines the microstructure evolution of 3,4,9,10-perylene-tetracarboxylic bis-benzimidazole (PTCBI) thin films resulting from conditions imposed during film deposition. Modification of the silicon dioxide interface with a hydrophobic monolayer (octadecyltrichlorosilane (OTS-18)) alters the PTCBI growth habit by changing the unit cell contact plane. PTCBI films deposited on oxide surface have an orientation of (011), while films atop OTS-treated oxide surface have a preferred orientation of (001). The quality of the self assembled monolayer does not appear to influence the PTCBI growth preference significantly yet it enhances the carrier mobility, suggesting that charge traps are adequately passivated due to uniform monolayer coverage. High-quality monolayers result in n-type carrier mobility values of 0.05,cm2V,1s,1 Increasing the substrate temperature during PTCBI film deposition correlates with an increase in mobility that is most significant for films deposited on OTS-treated surface. [source] Atomic Layer Deposition of UV-Absorbing ZnO Films on SiO2 and TiO2 Nanoparticles Using a Fluidized Bed Reactor,ADVANCED FUNCTIONAL MATERIALS, Issue 4 2008David M. King Atomic layer deposition (ALD) was used to apply conformal, nanothick ZnO coatings on particle substrates using a fluidized bed reactor. Diethylzinc (DEZ) and water were used as precursors at 177,°C. Observed growth rates were ca. 2.0 Å/cycle on primary particles as verified by HRTEM. ICP-AES and XPS were used to quantify Zn:substrate ratios. Layers of 6, 18, and 30 nm were deposited on 550 nm SiO2 spheres for UV blocking cosmetics particles. TiO2 nanoparticles were coated in the second part of this work by ZnO shells of 2, 5, and 10 nm thickness as novel inorganic sunscreen particles. The specific surface area of powders changed appropriately after nanothick film deposition using optimized conditions, signifying that high SA particles can be functionalized without agglomeration. The ZnO layers were polycrystalline as deposited and narrowing of the FWHM occurred upon annealing. Annealing the ZnO-TiO2 nanocomposite powder to 600,°C caused the formation of zinc titanate (Zn2TiO4) in both oxygen-rich and oxygen-deficient environments. The non-ideal surface behavior of the DEZ precursor became problematic for the much longer times required for high surface area nanoparticle processing and results in Zn-rich films at this growth temperature. In situ mass spectrometry provides process control capability to functionalize bulk quantities of nano- and ultrafine particles without significant precursor waste or process overruns. ZnO overlayers can be efficiently deposited on the surfaces of primary particles using ALD processing in a scalable fluidized bed reactor. [source] Structure,Property Relation of SrTiO3/LaAlO3 InterfacesADVANCED MATERIALS, Issue 17 2009Mark Huijben Abstract A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk metallicity, magnetic scattering, and superconductivity. The relation between the structure and the properties of the SrTiO3/LaAlO3 interface can be explained in a meaningful way by taking into account the relative contribution of three structural aspects: oxygen vacancies, structural deformations (including cation disorder), and electronic interface reconstruction. The emerging phase diagram is much richer than for related bulk oxides due to the occurrence of interface electronic reconstruction. The observation of this interface phenomenon is a display of recent advances in thin film deposition and characterization techniques, and provides an extension to the range of exceptional electronic properties of complex oxides. [source] Chemical Solution Route to Conformal Phosphor Coatings on Nanostructures,ADVANCED MATERIALS, Issue 24 2008Eve Bauer We have demonstrated the ability to apply thin conformal films onto complex nanostructures using a polymer assisted deposition technique. Sequestering the metal by binding it to a polymer results in a bottom-up growth process that leads to conformal film deposition. We have deposited a thin film of the phosphor Eu:YVO4 on 60,,m thick anodiscs® with 200,nm pores resulting in highly luminescent nanostructures. [source] Reduction and identification methods for Markovian control systems, with application to thin film depositionINTERNATIONAL JOURNAL OF ROBUST AND NONLINEAR CONTROL, Issue 2 2004Martha A. Gallivan Abstract Dynamic models of nanometer-scale phenomena often require an explicit consideration of interactions among a large number of atoms or molecules. The corresponding mathematical representation may thus be high dimensional, nonlinear, and stochastic, incompatible with tools in nonlinear control theory that are designed for low-dimensional deterministic equations. We consider here a general class of probabilistic systems that are linear in the state, but whose input enters as a function multiplying the state vector. Model reduction is accomplished by grouping probabilities that evolve together, and truncating states that are unlikely to be accessed. An error bound for this reduction is also derived. A system identification approach that exploits the inherent linearity is then developed, which generates all coefficients in either a full or reduced model. These concepts are then extended to extremely high-dimensional systems, in which kinetic Monte Carlo (KMC) simulations provide the input,output data. This work was motivated by our interest in thin film deposition. We demonstrate the approaches developed in the paper on a KMC simulation of surface evolution during film growth, and use the reduced model to compute optimal temperature profiles that minimize surface roughness. Copyright © 2004 John Wiley & Sons, Ltd. [source] Refractive-index anisotropy and optical dispersion in films of deoxyribonucleic acid,JOURNAL OF APPLIED POLYMER SCIENCE, Issue 1 2007Anna Samoc Abstract We have determined the refractive indices in the directions parallel and perpendicular to the surface plane of films of deoxyribonucleic acid (DNA) and their wavelength dispersion. These parameters are fundamental for understanding the properties of waveguiding structures containing DNA-based photonic materials. The orientation of DNA molecules in films and their optical properties are sensitive to the film fabrication and environmental conditions influencing the structure. Prism coupling measurements show ambient-humidity-related changes in the refractive index, birefringence, and anisotropy of the alignment of the DNA molecules in the films studied. These films were 0.5,5 ,m thick, were prepared by both spin coating and casting from aqueous solutions containing 0.1,3 wt % DNA, and were measured in ambient air with relative humidities of 37,58%. The optical properties of the films and the orientation of the DNA molecules are discussed with respect to the mechanism for the formation of the polymer liquid-crystalline phases during film deposition. The dispersion of the refractive indices in films of native DNA has been derived from interference fringes in absorption and reflection spectra in the wavelength range of 350,2700 nm through the fitting of the positions of the fringes with the Sellmeier dispersion formula in combination with the prism coupling data. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 105: 236,245, 2007 [source] Multilayer Thin Films by Layer-by-Layer Assembly of Hole- and Electron-Transport Polyelectrolytes: Optical and Electrochemical PropertiesMACROMOLECULAR CHEMISTRY AND PHYSICS, Issue 20 2006Kyungsun Choi Abstract Summary: In this paper, we present the synthesis of a series of p-type and n-type semiconducting polyelectrolytes with triarylamine, oxadiazole, thiadiazole and triazine moieties. The synthesized polymeric hole and electron transport materials were examined optically and electrochemically using UV/Vis spectroscopy, PL spectroscopy and CV. Based on the optical and electrochemical data, each of the energy levels were calculated and all values suggested that they were promising hole- (p-type) or electron-transport (n-type) materials for devices. Moreover, the synthesized ionic polymers were suitable for LBL thin film deposition from dilute polymer solutions and the multilayers were fully characterized by UV/Vis, PL spectroscopy and CV. [source] Challenges of introducing quantitative elementary reactions in multiscale models of thin film depositionPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 9 2010Alessandro Barbato Abstract The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics into models of chemical vapor deposition (CVD) reactors has been a challenge for many years. In this article we review the literature concerning the study of the dynamics of the Si(100)2,×,1 surface and introduce a multiscale model that captures the main features of its reactivity. The model combines the results of ab initio calculations with an atomistic description of the Si surface, obtained using a 3D-kinetic Monte Carlo (KMC) model that explicitly accounts for the 2,×,1 surface reconstruction and the formation and diffusion of Si dimers on a hydrogenated surface. At the atomistic scale, we determined pre-exponential factors and activation energies of hydrogen desorption reactions proceeding through the 2H, 3H, and 4H mechanisms. The calculated kinetic constants were embedded in the KMC model and used to simulate literature TPD experimental data. The simulations were used to fit the activation energies of hydrogen desorption reactions, which showed that DFT calculations performed with B3LYP functionals are likely to overestimate hydrogen desorption energies by up to 9,kcal,mol,1, which was confirmed by successive ab initio calculations. Two examples of the solution of the KMC model in conjunction with a reactor scale model are provided, in which the coupling was performed adopting both a hierarchic and a two-way coupling strategy. We found that in the plasma deposition of nanocrystalline silicon performed at low substrate temperatures the growth proceeds through a layer-by-layer mechanism on a surface almost completely covered by hydrogen. The application of the same model to the simulation of the thermal CVD of Si showed that at intermediate growth temperatures, when the hydrogen surface concentration is high, a new hydrogen desorption mechanism, in which Si adatoms play an important role, is active. Length scales encountered in multiscale modeling of thin films deposition. [source] Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009C. Mauder Abstract In this paper, we investigate the influence of the nitridation of LiAlO2 substrates on the growth of m-plane (1-100) GaN layers by metal-organic vapour phase epitaxy (MOVPE). Before thin film deposition, we performed an in-situ substrate pretreatment by exposing the wafer to NH3 for different times between no pretreatment and 300 s. The properties of subsequently grown layers show a significant dependency on this nitridation step. We find that this procedure is essential for obtaining pure m-plane GaN films and has a beneficial effect on the X-ray rocking curve (XRC) full width at half maximum (FWHM) value, which decreases by almost two orders of magnitude. Deposited layers with NH3 pretreatment also exhibit much smoother surfaces with a reduction of the root mean square (RMS) roughness value from ,20 to ,6 nm. Additionally, the nitridation greatly increases the GaN band edge emission intensity in room temperature (RT) photoluminescence (PL) spectroscopy. Furthermore, we compare the sensitivity of the substrate against water for uncoated LiAlO2 wafers with and without nitridation process. While the untreated surface shows a clear roughening when dipped into de-ionized (DI) water for 5 min, we can see no significant impact on the nitridated substrate surface. This indicates a change in surface composition which protects the sensitive substrate surface and provides good conditions for the nucleation of high-quality m-plane GaN films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Fabrication of 2-D nanostructures via metal deposition through a colloidal mask: comparison between thermal evaporation and RF magnetron sputteringPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2008Magdalena Ulmeanu Abstract We use spherical polystyrene beads in the size range from 500 nm - 2 ,m to form lithographic masks on surfaces. The masks consist of hexagonally arranged monolayers of these particles formed independently via a self-organized process upon solvent evaporation. With the help of the so called floating technique, the masks can be transferred to almost any arbitrary substrate. They have been utilized e.g. as masks for vacuum deposition, ion etching, or as masters for micro-contact-printing. Current research concentrates on the structure differences when the film deposition was done by thermal evaporation or RF magnetron sputtering. Investigations have been done on different metallic films, with emphasizes on Au thin film. The structures were investigated by atomic force microscopy (AFM) and scanning force microscopy (SEM). The differences in the nanostructures obtained after the removal of the colloidal mask will be evaluated in respect with the thin film deposition technique. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Deposition of SiO, -Like Thin Films from a Mixture of HMDSO and Oxygen by Low Pressure and DBD Discharges to Improve the Corrosion Behaviour of SteelPLASMA PROCESSES AND POLYMERS, Issue S1 2007Camille Petit-Etienne Abstract Hexamethyldisiloxane was used to deposit silicon dioxide thin films using a low frequency plasma reactor at low pressure as well as a dielectric barrier discharge (DBD) at atmospheric pressure. FT-IR, XPS, EIS, SEM and ellipsometry were used to analyse the samples. The results show that, at low pressure, the deposited films which are smooth, continuous and dense present a polymer-like structure. By carrying out the film deposition after an oxygen plasma pretreatment step, a further improvement in the protective properties is achieved, which is observed in the case of SiO, coatings with 13.56 MHz RF generators.1 At atmospheric pressure, the deposited films present an inorganic character deposited in open air and a polymer-like one deposited under a controlled nitrogen atmosphere in our DBD reactor. The latter also allows continuous films which present the best anti-corrosive properties (which have been studied for the first time for anti-corrosive properties) when they contain some carbon incorporated. [source] Cover Picture: Plasma Process.PLASMA PROCESSES AND POLYMERS, Issue 2 2007Polym. Cover: The aquamarine discharge exemplifies polymerization of acetylene in a DBD reactor. In total, over 20 precursors were classified for their "ease" of film deposition and growth at low energy input. Next to acetylene, pyrrole is the precursor of choice. In-depth analysis of the polymer films offers insights in their physicochemical properties. The research was a combined effort of VITO and KULeuven. Further details can be found in the article by P. Heyse, R. Dams, S. Paulussen,* K. Houthoofd, K. Janssen, P. A. Jacobs, and B. F. Sels on page 145. [source] Effect of acids on in situ polyaniline film formationPOLYMER INTERNATIONAL, Issue 8 2004Prof MM Ayad Abstract The chemical oxidation of aniline with ammonium persulfate (APS) to form polyaniline (PANI) films has been studied in different aqueous acid media such as sulfuric, nitric, phosphoric and acetic acids. A comparison was made between the yields of PANI film deposition during the polymerization from these media with the corresponding one obtained previously from aqueous HCl solution. The degradation of the formed PANI films at the beginning of polymerization obtained at the higher concentrations of HCl is absent when the other acids under consideration were used. The effect of acid concentration on the yield and growth rate of the PANI film was studied. The variation in the yield and growth rate of the polymer films at different acid concentrations was explained on the basis of the electrostatic repulsion and the screening effects. Copyright © 2004 Society of Chemical Industry [source] The effect of low pressure chemical vapor deposition of silicon nitride on the electronic interface properties of oxidized silicon wafersPROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 5 2007Hao Jin Abstract The effect of LPCVD Si3N4 film deposition on oxidized Si wafers, to form Si3N4/SiO2/Si stacks, is studied using capacitance,voltage and carrier lifetime measurements. The deposition of a nitride film leads to an increase in the density of defects at the Si,SiO2 interface, with the increase being greater the thinner the oxide. However, even the presence of a very thin intermediate oxide results in a dramatic improvement in interface properties compared to the direct deposition of the Si3N4 film on Si. The interface degradation occurs in the initial stages of nitride film deposition and appears to be largely the result of increased interfacial stress. Subsequent thermal treatments do not result in significant further degradation of the Si,SiO2 interface (except for a loss of hydrogen), again in contrast to the case where the nitride films is deposited onto Si. Copyright © 2007 John Wiley & Sons, Ltd. [source] Cyclodextrin inclusion complexes as novel MOCVD precursors for potential cobalt oxide depositionAPPLIED ORGANOMETALLIC CHEMISTRY, Issue 2 2010N. D. Papadopoulos Abstract The potential use of the inclusion complexes of ,-cyclodextrins with metal halides as novel precursors in MOCVD applications was examined in terms of microstructure, thermal stability and chemical modifications during heating. The investigation was especially focused on the inclusion complex of ,-cyclodextrin with cobalt iodide for cobalt oxide thin film deposition. The general composition assigned to the dextrin's inclusion complex was: (,-CD)2,CoI7,11H2O. It was found that the inclusion complex of ,-cyclodextrin with CoI2 may prove a promising alternative to traditional metalorganic or organometallic Co-precursors for precise CVD applications. The sublimation temperature must be preferably in the range 70,125 °C, and the decomposition temperature (substrate temperature) in the range of 350,400 °C. Three distinct regions can be recognized by heating: transformation of tightly bound water molecules into easily movable ones, sublimation of iodine ions and Co atoms oscillation and thermal decomposition of the glycositic ring into volatile by-products. Copyright © 2009 John Wiley & Sons, Ltd. [source] Plasma-Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate,CHEMICAL VAPOR DEPOSITION, Issue 6-7 2007A. Ten, Eyck Abstract In this paper, a method for the plasma-enhanced (PE) atomic layer deposition (ALD) of palladium on air-exposed, annealed poly(p -xylylene) (Parylene-N, or PPX) is presented. Palladium is successfully deposited on PPX at 80,°C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (PdII(hfac)2) as the precursor. By optimizing the mixture of hydrogen and nitrogen, the polymer surface is modified to introduce active sites allowing the chemisorption of the PdII(hfac)2. In addition, enough free hydrogen atoms are available at the surface for ligand removal and Pd reduction, while at the same time, enough hydrogen atoms are consumed in the plasma to ensure there is no visible degradation of the PPX. X-ray photoelectron spectroscopy (XPS) measurements of the substrate after hydrogen/nitrogen plasma treatment at 50,W clearly show the presence of nitrogen bound to the substrate surface. XPS measurements of the deposited Pd films indicate good quality for both substrates, suggesting that the substrate temperature was low enough to prevent dissociation of the hfac ligand and adequate scavenging of the hfac ligand by the available atomic hydrogen. The remote hydrogen/nitrogen plasma enables Pd film deposition on polymer surfaces, which do not typically react with the Pd precursor, and are not catalysts for the dissociation of molecular hydrogen. [source] MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications,CHEMICAL VAPOR DEPOSITION, Issue 2-3 2007M. Lemberger Abstract In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal,oxide,semiconductor devices are investigated. Films are deposited by metal,organic (MO)CVD using the single-source precursor Hf(acac)2(OSitBuMe2)2. This precursor exhibits good properties in terms of hydrolysis stability, volatility, and deposition. However, precursor decomposition is affected by surface conditions. Films deposited on Si wafers reveal high C contamination (up to 20,at,%) and low Si content (up to 20,at,%). In contrast, for film deposition on Ge wafers, no C contamination can be detected and Si incorporation is delayed until after about 15,nm HfO2 dielectric growth. Post-deposition rapid thermal annealing in an O2 atmosphere causes crystallization of deposited films, Si and Ge redistribution in the dielectric, respectively, and interfacial layer growth. However, oxygen annealing was also found to reduce effective oxide thickness (EOT) significantly compared to as-deposited films, which is attributed to crystallization effects. However, scaling of EOT is limited by that interfacial layer growth. Leakage currents are mainly caused by trap-related conduction mechanisms. Energy levels of involved traps decrease with increasing crystallization and/or Hf content, and values of 0.5,eV and 1,eV related to Hf and Si bonds, respectively, are obtained. [source] Challenges of introducing quantitative elementary reactions in multiscale models of thin film depositionPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 9 2010Alessandro Barbato Abstract The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics into models of chemical vapor deposition (CVD) reactors has been a challenge for many years. In this article we review the literature concerning the study of the dynamics of the Si(100)2,×,1 surface and introduce a multiscale model that captures the main features of its reactivity. The model combines the results of ab initio calculations with an atomistic description of the Si surface, obtained using a 3D-kinetic Monte Carlo (KMC) model that explicitly accounts for the 2,×,1 surface reconstruction and the formation and diffusion of Si dimers on a hydrogenated surface. At the atomistic scale, we determined pre-exponential factors and activation energies of hydrogen desorption reactions proceeding through the 2H, 3H, and 4H mechanisms. The calculated kinetic constants were embedded in the KMC model and used to simulate literature TPD experimental data. The simulations were used to fit the activation energies of hydrogen desorption reactions, which showed that DFT calculations performed with B3LYP functionals are likely to overestimate hydrogen desorption energies by up to 9,kcal,mol,1, which was confirmed by successive ab initio calculations. Two examples of the solution of the KMC model in conjunction with a reactor scale model are provided, in which the coupling was performed adopting both a hierarchic and a two-way coupling strategy. We found that in the plasma deposition of nanocrystalline silicon performed at low substrate temperatures the growth proceeds through a layer-by-layer mechanism on a surface almost completely covered by hydrogen. The application of the same model to the simulation of the thermal CVD of Si showed that at intermediate growth temperatures, when the hydrogen surface concentration is high, a new hydrogen desorption mechanism, in which Si adatoms play an important role, is active. Length scales encountered in multiscale modeling of thin films deposition. [source] | |||||||||||||||||||||||||||||||