Film Composition (film + composition)

Distribution by Scientific Domains


Selected Abstracts


Structure and mechanical properties of nanocrystalline boron nitride thin films ,

APPLIED ORGANOMETALLIC CHEMISTRY, Issue 5 2001
Paolo M. Ossi
Abstract Boron nitride thin films have been deposited on (100) Si wafers, kept at low temperature, by radio frequency (r.f.) magnetron sputtering. The r.f. target power was fixed at 150,W and the substrate bias voltage ranged between ,50 and ,130,V. Film composition was checked by Auger electron spectroscopy; the structure was investigated by Fourier transform IR spectroscopy, glancing-angle X-ray diffraction and micro-Raman spectroscopy. Film hardness and Young's modulus were measured by nanoindentation. Film composition is nearly equiatomic, with a low degree of gaseous contamination. All samples are very fine grained, and nanocrystalline. Film coordination is mixed sp2,sp3, and the fraction of tetrahedral coordination depends critically on the bias voltage value. In hexagonal sp2 -bonded films the hardnesses and Young's moduli are low and increase considerably with the content of sp3 -coordinated cubic phase. Copyright © 2001 John Wiley & Sons, Ltd. [source]


Electrochemically Induced Formation of Surface-Attached Temperature-Responsive Hydrogels.

ELECTROANALYSIS, Issue 9 2010
Amperometric Glucose Sensors with Tunable Sensor Characteristics
Abstract Employing thermally responsive hydrogels, the design of an amperometric glucose sensor is proposed. The properties of the biosensor can be modulated upon changing the temperature. Homo- and copolymers of N -isopropylacrylamide (NIPAm) and oligo(ethylene glycol) methacrylate (OEGMA) were prepared by electrochemically induced polymerization thus yielding surface-attached hydrogels. The growth of the films as well as the change in the film thickness in dependence from the temperature were investigated by means of an electrochemical quartz crystal microbalance (EQCM). The layer thickness in the dry state ranged from 20 to 120,nm. The lower critical solution temperature (LCST) of the hydrogel increases with increasing content of the more hydrophilic OEGMA. Hence, the swelling in aqueous electrolyte is composition dependent and can be adjusted by selecting a specific NIPAm to OEGMA ratio. All homo- and copolymer films showed good biocompatibility and no fouling could be observed during exposing the surfaces to human serum albumin. For amperometric glucose detection, glucose oxidase was entrapped in the films during electrochemically-induced polymerization. Both the apparent Michaelis constant (K and the apparent maximum current (i as determined by amperometry could be adjusted both by the film composition as well as the operation temperature. [source]


Studies on glass transition temperature of mono and bilayer protein films plasticized by glycerol and olive oil

JOURNAL OF APPLIED POLYMER SCIENCE, Issue 5 2008
Babak Ghanbarzadeh
Abstract Thermomechanical and thermal properties of whey protein, maize prolamin protein (zein), and the laminated whey protein,zein films were studied. The dynamic mechanical (thermal) analysis (DMTA) results showed that the single zein film had higher Tg than single whey protein and zein,whey laminated films. The shift in the Tg values of films from 31.2°C in whey protein film and 88.5°C in the zein film to 82.8°C in the laminated whey protein,zein films may be implied some interaction formation between the two polymers. The small tan , peaks were observed at ,50°C in zein,glycerol films and at ,22.37°C in the whey protein films and can be related to ,-relaxation phenomena or presence of glycerol rich region in polymer matrix. Zein-olive oil and zein,whey protein,olive oil films showed tan , peaks corresponded the Tg values at 113.8, and 92.4°C, respectively. Thus, replacing of glycerol with olive oil in film composition increased Tg. A good correspondence was obtained when DSC results were compared with the tan , peaks in DMTA measurements. DSC thermograms suggested that plasticizers and biopolymers remained a homogeneous material throughout the cooling and heating cycle. The results showed that Tg of zein,glycerol films predicted by Couchman and Karasz equation is very close to value obtained by DSC experiments. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008 [source]


Spectroscopic ellipsometry studies of Mg-doped ZnO thin films prepared by the sol,gel method

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2009
Shenghong Yang
Abstract Zn1,xMgx O (ZMO) thin films with x = 0, 0.1, 0.2, and 0.3 were prepared on Si(100) substrates by the sol,gel method. The influence of Mg content on the structural and the optical properties was studied by X-ray diffraction and spectroscopic ellipsometry (SE) in the UV,visible region. The measured SE spectra were analyzed with an appropriate procedure to accurately determine the thickness and the optical constants of the thin films. It was found that the optical constants of the ZMO films are functions of the film composition. The refractive indices of the ZMO films decrease with increasing Mg content, and the optical bandgap energy exhibits nonlinear behavior or a bowing effect with the change of Mg mole fraction. A maximum band gap of ,3.91 eV was achieved at x = 0.3. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2008
S. Rudra
Abstract The objective of this work is to study the optical and electrical properties of tantalum nitride and tantalum barrier thin films used against copper diffusion in Si in integrated circuits using spectroscopic ellipsometry in the VUV and UV,visible range. Single layers of tantalum nitride and bilayer films of Ta/TaN were produced by reactive magnetron sputtering on Si(100) substrates covered with a native oxide layer. Ellipsometric measurements were performed in the energy range from 0.73,8.7 eV and the dielectric functions were simulated using Drude,Lorentz model and effective medium approximation (EMA) in order to obtain information regarding film thickness, film composition, free carrier plasma energy, mean relaxation time and electrical resistivity. The film thickness clearly affects the electrical resistivity and the electron mean free path. It was observed that for films of Ta on TaN even after maintaining the deposition condition suitable for the ,-phase of Ta, it turned out to be a mixture of ,- and ,-phases with higher contribution of the ,-phase. It is shown that even a very small intermixture of two different phases of Ta can be determined accurately using ellipsometry. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Silver nanocluster containing diamond like carbon

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2008
F. Schwarz
Abstract Applying Diamond Like Carbon (DLC) as medical coating has become well established since large scale plasma processes like Plasma Immersion Ion Implantation and Deposition (PIII&D) are available. Now the focus of research lies on systematic modification of certain biological relevant properties and the most recent field of interest turned to generating antimicrobial behaviour. This is desirable for medical tools as well as for different types of medical implants. Since silver and copper are known to provide a bactericidal effect, one tries to introduce clusters of these noble metals into the carbon matrix. The basic principle of the method presented is to convert a metal containing polymer film into DLC by ion bombardment. In this paper the hydrogenated DLC matrix is characterized and the evolution of the metal particles is studied. By means of film composition (RBS/ERD), bonding structure (Raman spectroscopy) and hardness (nanoindentation), the dependency of these material properties on ion species, energy and fluence is investigated. TEM imaging is used to visualize the film structure. Upon ion irradiation of the polymer films, increased density and considerable loss of hydrogen can be observed, which both are controlled by ion fluence and mass. The crosslinking of the carbon network, caused by hydrogen drive out as well as atomic displacements in collision cascades, results in the formation of a-C:H. The silver particles in the film some ion induced growth, but still remain as nanoclusters in the a-C:H matrix. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Reactive magnetron sputtering of highly (001)-textured WS2,x films: Influence of Ne+, Ar+ and Xe+ ion bombardment on the film growth

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2006
K. Ellmer
Abstract Layer-type van der Waals semiconductor WS2,x films were grown by radio frequency reactive magnetron sputtering from a metallic tungsten target onto oxidized silicon substrates. The sputtering atmosphere consisted of 75% hydrogen sulfide and 25% neon, argon or xenon. The substrate voltage and hence the energy of the ions bombarding the growing film, was varied from about 20 V (floating potential) to ,80 V. By in situ energy-dispersive X-ray diffraction the growth of the films was monitored and by elastic recoil detection analysis the film composition was measured. It was found that with xenon in the sputtering atmosphere a substrate voltage of ,20 V is sufficient to suppress the crystalline film growth, while for argon as the sputtering rare gas this occurs only at ,80 V. The disturbed film growth is accompanied by a sulfur loss of the growing WS2,x films down to x = 1.1 for sputtering in Ar + H2S at a substrate potential of ,60 V. The results are tentatively explained by the different momentum transfers to sulfur atoms, which is highest for argon ions. It has also to be taken into account that the low-energy xenon bombardment is a many-body cascade process with a much higher local energy density compared to argon and neon bombardment and leading to a higher defect density and a supression of the crystalline growth. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Composition and formation mechanism of zirconium oxynitride films produced by reactive direct current magnetron sputtering

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2004
J. M. Ngaruiya
Abstract Direct current magnetron sputtered zirconium oxynitride films show an improvement in both deposition rate and physical properties compared to zirconium oxide. Here we seek to understand these beneficial effects and report on the film composition and crystallographic structure. Based on a thermochemical description together with a modeling of formation kinetics we propose a film formation mechanism, which explains many of the observations. Rutherford backscattering spectroscopy (RBS) shows early nitrogen incorporation at 64% N2 flow in disagreement with the predictions of thermochemistry. The stoichiometry is only successfully simulated with the use of an expanded Berg,Larsson model with a low replacement coefficient of about 0.1 of nitrogen by oxygen after metal-nitrogen bond formation. The deviation from complete replacement as predicted by thermodynamics illustrates the importance of kinetics in film formation. The model further successfully predicts the variation of the mass deposition rate. The X-ray diffraction analyses suggest that, within the crystalline phase, nitrogen atoms occupy oxygen sites, resulting in an unchanged zirconium oxide structure. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Optical Emission Spectroscopy Analysis of Ar/N2 Plasma in Reactive Magnetron Sputtering

PLASMA PROCESSES AND POLYMERS, Issue S1 2009
Angélique Bousquet
Abstract The ternary silicon carbide-nitride SiCxNy presents very promising properties: hardness, low chemical reactivity, and resistance to oxidation. This material can be deposited by various processes, but reactive magnetron sputtering is one of the most versatile. In this paper, we investigated by optical emission spectroscopy an argon-nitrogen plasma used with a silicon carbide target to deposit SiCxNy films. First, we observed the physical aspect of the discharge is modified not only with the injected atmosphere but also with target surface state, which highly influences the N2 dissociation rate. Then, we followed two species coming from target sputtering: CN and Si. This study confirms the target nitriding up to a certain N2 fraction. Finally, the OES information was related to the deposited film composition. [source]


Study of Magnesium Boride Films Obtained From Mg(BH4)2 by CVD

CHEMICAL VAPOR DEPOSITION, Issue 8 2007
L. Crociani
Abstract Magnesium boride films are synthesized from Mg(BH4)2 by CVD. A new synthesis of the precursor is developed. Deposition time of the samples is varied to study its influence on film composition. The films are analyzed by means of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The contributions of various chemical species (boride and oxides) in the depth profiles, carried out using Ar ion sputtering combined with cyclic XPS measurements, are separated by peak-fitting analysis of photoelectron B1s and Auger MgKLL spectra. The samples are composed of MgBx film covered by an overlayer of magnesium and boron oxides. [source]


Growth and Properties of TiCl4 -Derived CVD Titanium Oxide Films at Different CO2/H2 Inputs,

CHEMICAL VAPOR DEPOSITION, Issue 5 2003
D.-H. Kuo
Abstract Crystalline titanium oxide films with a thickness of 0.09,0.55,,m were prepared at temperatures below 500,°C by CVD using a mixture of titanium tetrachloride (TiCl4), carbon dioxide (CO2), and hydrogen (H2) as reactants. Film thickness decreased with increasing substrate temperature and CO2/H2 input. Nanosized microstructure was obtained at high CO2/H2 input due to the growth retardation of reacted HO-TiCl3* by the unreacted TiCl4 and CO2. That film composition, i.e., the O/Ti ratio, increased with temperature and the CO2/H2 input can be explained by growth kinetics. Unlike film thickness, internal film stress increased with increasing substrate temperature. Adhesion was controlled by compressive internal stress due to the weak bonding between film and substrate. Two growth mechanisms are proposed to explain the tensile and compressive stress states in films produced by CVD. The adsorption-controlled reaction has a film in compressive stress that increases with an increase in temperature. On the other hand, thermally activated CVD produces a film in tensile stress that decreases with an increase in substrate temperature. [source]


Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2008
Yiguang Wang
Zirconium carbide (ZrC) coatings were fabricated by chemical vapor deposition (CVD) using ZrCl4, CH4/C3H6, and H2 as precursors. Both thermodynamic calculation results and the film compositions at different temperatures indicated that zirconium and carbon deposited separately during the CVD process. The ZrC deposition rates were measured for CH4 or C3H6 as carbon sources at different temperatures based on coating thickness. The activation energies for ZrC deposition demonstrated that the CVD ZrC process is controlled by the carbon deposition. This is also proven by the morphologies of ZrC coatings. [source]