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Extracted Parameters (extracted + parameter)

Distribution by Scientific Domains

Engineering	50%

Selected Abstracts

Visrock: a program for digital topography and X-ray microdiffraction imaging

JOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3 2007
Tilo Baumbach
Visrock is a program for interactive analysis of sequences of digital X-ray images. Visrock was developed in the context of the rocking-curve imaging method of full-field X-ray microdiffraction imaging. Its functionality is based on parallel profile analysis of millions of local diffraction profiles. Options for subsequent visualization of the spatial distribution of extracted parameters include automatic contrast enhancement, noise reduction and multi-peak analysis. In addition to microdiffraction imaging, further useful applications of the program lie particularly in computed tomography, sequential radiography and analyser-based imaging. [source]

Composite right/left-handed transmission line based on Koch fractal shape slot in the ground and UWB filter application

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 9 2009
Jian An
Abstract A novel composite right/left-handed transmission line is presented which is synthesized by etching Koch fractal shape slot in the ground plane and series capacitive gap in the conductor strip. Unlike the structures loaded with complementary split ring resonators, the proposed structure can operate at very wideband and is used to design an ultra-wideband (UWB) filter. The UWB filter is fabricated and tested. The relative bandwidth of the ,10 dB return loss is 128% and the insertion loss is larger than ,1.5 dB except at high frequencies. The equivalent circuit model of the proposed structure is presented and the electrical parameters are also extracted. The circuit model results are compared with the simulation and measurement results which verify that not only the extracted parameters are exact but also the equivalent circuit model is reasonable. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2160,2163, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24553 [source]

Influence from front contact sheet resistance on extracted diode parameters in CIGS solar cells

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 2 2008
Ulf Malm
Abstract The extraction of one-diode model parameters from a current,voltage (J,V) curve is problematic, since the model is one-dimensional while real devices are indeed three-dimensional. The parameters obtained by fitting the model curve to experimental data depend on how the current is collected, and more specifically the geometry of the contact. This is due to the non-uniform lateral current flow in the window layers, which leads to different parts of the device experiencing different front contact voltage drop, and hence different operating points on the ideal J,V curve. In this work, finite element simulations of three-dimensional contact structures are performed and compared to experimental data on Cu(In,Ga)Se2 -based solar cell devices. It is concluded that the lateral current flow can influence the extracted parameters from the one-diode model significantly if the resistivity of the front contact material is high, or if there is no current collecting grid structure. These types of situations may appear in damp heat-treated cells and module type cells, respectively. Copyright © 2007 John Wiley & Sons, Ltd. [source]

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate-last CMOS and MIM Devices

CHEMICAL VAPOR DEPOSITION, Issue 5-6 2008
Mindaugas Lukosius
Abstract Pure and diluted Ti[N(Et)2]4 precursors are used to grow TiN layers at 400,600,°C by using atomic vapor deposition (AVD®). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7,eV indicates the possibility of using AVD®-grown TiN as a metal gate electrode for PMOSFET and metal-insulator-metal (MIM) devices. TiN/HfO2/SiO2 stacks are integrated into gate-last PMOS transistors, and the extracted parameters are compared to poly-Si/SiO2 reference transistors. The optimized films grown at 400,°C with a thickness of 20,nm exhibit a resistivity of 400,µ,,cm. [source]