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Excitation Kinetics (excitation + kinetics)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Zero dimensional exciton-polaritons

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 10 2006
A. Baas
The cover picture from the article [1] shows, in the left parts of the three diagrams, the measured photoluminescence intensity as a function of energy and emission angle for a 3 ,m (left diagram), 9 ,m (middle diagram) and 19 ,m-diameter quasi-circular mesa (right diagram). The white lines are the energy dispersions of 2D polariton modes. For clarity, intensities above 1485 meV have been multiplied by a constant factor, as indicated. The right parts of the diagrams contain intensity plots of the simulated polariton spectral density for cylindrical mesas of the same diameters, yielding very good quantitative agreement of the 0D polariton states in the circular mesas. This confirms the coexistence of 0D and 2D microcavity polaritons in these semiconductor structures. This paper is an invited presentation from the 8th International Workshop on Nonlinear Optics and Excitation Kinetics. Further articles from NOEKS 8 are published in phys. stat. sol. (c) 3, No. 7 (2006). [source]

Proceedings of the 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7)

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2003
Martin Wegener
The 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7) was held at the Universität Karlsruhe (TH) from 24,28 February 2003. Topics of NOEKS 7 were: Ultrafast dynamics (coherent effects, coherent control, quantum kinetics, THz-experiments), photonic crystals (2D and 3D photonic band gap materials), quantum dot physics (quantum dots, quantum wires), spin effects (spin dephasing, spin transport), disorder-related effects, organic semiconductors, semiconductor quantum optics (luminescence, photon statistics), device physics (quantum cascade lasers, superlattices, interband lasers), and Bose-Einstein condensation of excitons. [source]

Hopping photoconductivity and its long-time relaxation in two-dimensional array of Ge/Si quantum dots

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2005
N. P. Stepina
Abstract Photoconductivity excitation kinetics has been studied in a two-dimensional array of Ge/Si quantum dots under illumination with different light wavelength. Both negative and positive photoeffects depending on dot occupations with holes were observed. Long-time conductivity dynamics (typically, 102,104 sec at T = 4.2 K) has been revealed as well as after switch on and switch off the illumination, displaying a sluggish temporal dependence. The observed effects were not suppressed by decreasing of the excitation energy below the silicon band-gap. For electronic glasses it was discovered that the more time under excitation the faster relaxation rate. Our results are explained by the different capture rate of electrons and holes by quantum dots, due to the presence of potential barriers created by positively charged Ge quantum dots. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]