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Epitaxy Growth (epitaxy + growth)

Distribution by Scientific Domains
Physics and Astronomy75%

Selected Abstracts

In situ observation experiment for semiconductor solution growth under reduced convection condition , a review

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 7-8 2003
Yuko Inatomi
Abstract Morphological stability of solid/liquid interface in semiconductor crystal growth from solution has been investigated using a near-infrared microscopic interferometer under a reduced convection condition by authors and Prof. Benz's group. In the result, step kinetic coefficient of the interface of GaP/GaP(111)B in liquid phase epitaxy growth was obtained and the estimated value of macrostep wavelength agreed well with the measured one. [source]

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

ADVANCED FUNCTIONAL MATERIALS, Issue 17 2010
Kris A. Bertness
Abstract The location of GaN nanowires is controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Nanowire growth is uniform within mask openings and absent on the mask surface for over 95% of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires are controlled by the size of the mask openings. Openings of approximately 500 nm or less produce single nanowires with symmetrically faceted tips. [source]

Correlation of CdSe quantum dot morphology, structure design and lasing properties of optically pumped green CdSe/ZnMgSSe lasers

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2007
S. V. Ivanov
Abstract We report on the molecular beam epitaxy growth of optically pumped Cd(Zn)Se/ZnMgSSe laser heterostructures with CdSe/ZnSe quantum dots in the active region, emitting in the green spectral range. The lasing threshold as low as 2.5 kW/cm2 and the external quantum efficiency of 43%, maximum pulse power of 22.35 W is demonstrated. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2008
J. Ortega-Gallegos
Abstract Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In0.3Ga0.7As on GaAs (001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As4 or As2 flux pressure of 5× 10,6 Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]