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Epitaxial Relationship (epitaxial + relationship)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Textured growth and microstructure of pulsed laser deposited Nb/Cr/SmCo5 hybrid structures

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2010
R. Schaarschuch
Abstract Hybrid structures based on superconducting Nb and highly coercive ferromagnetic SmCo5 films grown on MgO(100) substrates were fabricated by pulsed laser deposition under UHV conditions. Thin film architectures of SmCo5 on Nb and the reversed system both with and without Cr spacer layer between superconductor and ferromagnet were examined by transmission electron microscopy and X-ray diffraction concerning their microstructure and epitaxial relationship, respectively. For SmCo5 on Nb with thick intermediate Cr spacer the epitaxial relationship MgO(001)[100]//Cr(001)[110]//Nb(001)[110]//Cr(001)[110]//SmCo5(11,,,20)[0001]//Cr(001)[110] was found. With decreasing thickness of the Cr spacer layer the strength of the texture decreases and finally crystallinity of SmCo5 is lost. In the reversed layer system, Nb on Cr on SmCo5, with decreasing thickness of the Cr spacer layer the epitaxial relationships change from SmCo5(11,,,20)[0001]//Nb(001)[110] to local SmCo5(11,,,20) [0001]//Nb(110)[1,,,11] and the Nb texture changes from the (001)[110] component to a ,110, fibre. The orientation relationships observed are discussed with regard to elastic strain energy minimization. [source]

Epitaxial growth of carbon caps on Ni for chiral selectivity

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 13 2006
S. Reich
Abstract We suggest guiding principles for chirality-selective growth of single-walled carbon nanotubes. The chirality of a tube is determined by the carbon cap that forms during nucleation. Controlling the tube chirality requires controlling the nucleation stage. Certain caps can be favored by their epitaxial relationship to a metal surface. Lattice matched caps require ,0.1 eV/C less formation energy on a Ni surface than non-lattice matched cap structures. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

GaN growth on LiNbO3 (0001) , a first-principles simulation

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
Simone Sanna
Abstract The growth of GaN on the LiNbO3 (0001) surface is simulated by means of first-principles total-energy calculations. Firstly the adsorption of single N and Ga monolayers is investigated and then the layer-by-layer growth of GaN on the polar substrate within different orientations is modeled. While adsorbing a N layer does not heavily affect the substrate morphology, the adsorption of a Ga layer causes a rearrangement of the atomic structure. Furthermore the N layer is more strongly bound to the substrate than the Ga layer. On the basis of our results, we propose a microscopic model for the GaN/LiNbO3 interface. The GaN and LiNbO3 (0001) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [100]GaN II [110]. In this way the (0001) calculated in-plane lattice mismatch between GaN and LiNbO3 is minimal and equal to 6.79% of the GaN lattice constant. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Microstructure of A -plane InN grown on R -plane sapphire by ECR-MBE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
S. Watanabe
Abstract We used electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE) to grow A -plane (110) InN on nitridated R -plane (102) sapphire and then measured the structural properties using transmission electron microscopy (TEM). We determined the epitaxial relationship between A -plane InN and R -plane sapphire to be (110)InN // (102)sapphire and [100]InN // [110]sapphire. Moreover, the results indicated that the nitridation of the sapphire produced a (001) cubic AlN layer, and this layer caused the subsequent InN to have its a-axis normal to the interface. Also, by using two diffraction vector orientations in the TEM measurement, we found that dislocations with a screw component had a density of about 5 × 1010 cm,2, which is about ten times higher than that with an edge component. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Lattice-matched boronphosphide (BP)/hexagonal GaN heterostructure for inhibition of dislocation penetration

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
T. Udagawa
Abstract The crystallographic feature of a metal-organic CVD grown zinc-blende BP/wurtzite-GaN heterostructure was characterized utilizing high-resolution TEM and TED techniques. On the heterostructure system, the epitaxial relationship was revealed to be (0001), ,a -axis,-GaN//(111), ,110,-BP. (111)-BP was also found to be orientated in the "double positioning" with tracing hexagonal shape of (0001)-GaN probably because of the matching in the spacings between the a -axis of GaN (a = 0.319 nm) and the {110}-planes of BP (= 0.320 nm). (111)-BP was additionally recognized to stack in the c -direction of GaN with period of just half value of the c -axis (c = 0.518 nm). In addition to the matching property, (111)-BP joined with (0001)-GaN was found to be effective for annihilation of dislocations penetrating from the underneath GaN. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]