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Electron Transport Properties (electron + transport_property)

Distribution by Scientific Domains
Chemistry33%

Selected Abstracts

Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2009
M. Koyama
Abstract We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
Yu Cao
Abstract A study of the transport properties of polarizationinduced 2DEGs at MBE-grown single AlN/GaN heterostructures with different growth rates is reported. It is observed that faster growth rates lead to high mobilities, approaching , 1600 cm2/Vs at 300 K and , 6000 cm2/Vs at low temperatures for ultrathin (2.3 nm AlN/GaN) heterojunctions. By using a theoretical model in conjunction with experimentally measured transport properties, it is concluded that the 300 K sheet resistances of very high density 2DEGs at AlN/GaN heterojunctions are currently limited (, 170 , /,) by interface roughness scattering, and can be further reduced by improving the growth conditions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Tuning of electron transport through molecular bridge systems: A study of shot noise

INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, Issue 1 2008
Santanu K. Maiti
Abstract We study electron transport characteristics through a single phenalenyl molecule attached with two nonsuperconducting electrodes by the use of Green's function technique. Parametric calculations are given based on the tight-binding model to characterize the electron transport through such molecular bridge system. It is observed that the electron transport properties are significantly influenced by (a) the interference effect and (b) the molecule-to-electrodes coupling strength. In this context we also describe the noise power of the current fluctuations that provides an important information about the electron correlation, which is obtained by calculating the Fano factor (F). The knowledge of this current fluctuations gives a key idea for fabrication of efficient molecular devices. © 2007 Wiley Periodicals, Inc. Int J Quantum Chem, 2008 [source]

Development of sustainable resource-based nanostructured polyaniline/castor oil polyurethane composites

ADVANCES IN POLYMER TECHNOLOGY, Issue 1 2009
Sharif Ahmad
Abstract Processibility is one of the important requirements for the commercial utilization of conducting polymers. Studies on composites and blends based on nano polyaniline (PANI) dispersions have become the subject of scientific curiosity with regard to their morphology, stability, and electron transport properties. In general, polymer nanocomposites are made by dispersing inorganic or organic nanoparticles into either a conventional thermoplastic or thermoset polymer. The present study reports the synthesis of nanostructured MO-PANI and castor oil polyurethane (COPU),based composites. The effect of loading of nanostructured MO-PANI in COPU on the spectral, physicochemical and morphological properties has been analyzed. © 2009 Wiley Periodicals, Inc. Adv Polym Techn 28:26,31, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/adv.20143 [source]

Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2009
M. Koyama
Abstract We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]