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Electric Double Layer (electric + double_layer)
Selected AbstractsHigh-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic LiquidsADVANCED FUNCTIONAL MATERIALS, Issue 7 2009Hongtao Yuan Abstract Very recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1,×,1014 cm,2). To increase the maximum attainable carrier density for electrostatic tuning of electronic states in semiconductor field-effect transistors is a hot issue but a big challenge. Here, ultrahigh density carrier accumulation is reported, in particular at low temperature, in a ZnO field-effect transistor gated by electric double layers of ionic liquid (IL). This transistor, called an electric double layer transistor (EDLT), is found to exhibit very high transconductance and an ultrahigh carrier density in a fast, reversible, and reproducible manner. The room temperature capacitance of EDLTs is found to be as large as 34,µF cm,2, deduced from Hall-effect measurements, and is mainly responsible for the carrier density modulation in a very wide range. Importantly, the IL dielectric, with a supercooling property, is found to have charge-accumulation capability even at low temperatures, reaching an ultrahigh carrier density of 8×1014 cm,2 at 220,K and maintaining a density of 5.5×1014 cm,2 at 1.8,K. This high carrier density of EDLTs is of great importance not only in practical device applications but also in fundamental research; for example, in the search for novel electronic phenomena, such as superconductivity, in oxide systems. [source] Nonlinear Smoluchowski velocity for electroosmosis of Power-law fluids over a surface with arbitrary zeta potentialsELECTROPHORESIS, Issue 5 2010Cunlu Zhao Abstract Electroosmotic flow of Power-law fluids over a surface with arbitrary zeta potentials is analyzed. The governing equations including the nonlinear Poisson,Boltzmann equation, the Cauchy momentum equation and the continuity equation are solved to seek exact solutions for the electroosmotic velocity, shear stress, and dynamic viscosity distributions inside the electric double layer. Specifically, an expression for the general Smoluchowski velocity is obtained for electroosmosis of Power-law fluids in a fashion similar to the classic Smoluchowski velocity for Newtonian fluids. The existing Smoluchowski slip velocities under two special cases, (i) for Newtonian fluids with arbitrary zeta potentials and (ii) for Power-law fluids with small zeta potentials, can be recovered from our derived formula. It is interesting to note that the general Smoluchowski velocity for non-Newtonian Power-law fluids is a nonlinear function of the electric field strength and surface zeta potentials; this is due to the coupling electrostatics and non-Newtonian fluid behavior, which is different from its counterpart for Newtonian fluids. This general Smoluchowski velocity is of practical significance in determining the flow rates in microfluidic devices involving non-Newtonian Power-law fluids. [source] Electrophoresis of a charge-regulated toroid normal to a large diskELECTROPHORESIS, Issue 2 2008Jyh-Ping Hsu Abstract The electrophoresis of a charge-regulated toroid (doughnut-shaped entity) normal to a large disk is investigated under the conditions of low surface potential and weak applied electric field. The system considered is capable of modeling the electrophoretic behavior of various types of biocolloids such as bacterial DNA, plasmid DNA, and anabaenopsis near a perfectly conducting planar wall. The influences of the size of the toroid, the separation distance between the toroid and the disk, the charged conditions on the surfaces of the toroid and the disk, and the thickness of electric double layer on the electrophoretic mobility of the toroid are discussed. The results of numerical simulation reveal that under typical conditions the electrophoretic behavior of the toroid can be different from that of an integrated entity. For instance, if the surface of the toroid carries both acidic and basic functional groups, its mobility may have a local maximum as the thickness of double layer varies. We show that the electrophoretic behavior of the toroid is different, both qualitatively and quantitatively, from that of the corresponding integrated particle (particle without hole). [source] The Effects of Moisture in Low-Voltage Organic Field-Effect Transistors Gated with a Hydrous Solid ElectrolyteADVANCED FUNCTIONAL MATERIALS, Issue 16 2010Nikolai Kaihovirta Abstract The concept of using ion conducting membranes (50,150 ,m thick) for gating low-voltage (1 V) organic field-effect transistors (OFETs) is attractive due to its low-cost and large-area manufacturing capabilities. Furthermore, the membranes can be tailor-made to be ion conducting in any desired way or pattern. For the electrolyte gated OFETs in general, the key to low-voltage operation is the electrolyte "insulator" (the membrane) that provides a high effective capacitance due to ionic polarization within the insulator. Hydrous ion conducting membranes are easy to process and readily available. However, the role of the water in combination with the polymeric semiconductor has not yet been fully clarified. In this work electrical and optical techniques are utilized to carefully monitor the electrolyte/semiconductor interface in an ion conducting membrane based OFET. The main findings are that 1) moisture plays a major part in the transistor operation and careful control of both the ambient atmosphere and the potential differences between the electrodes are required for stable and consistent device behavior, 2) the obtained maximum effective capacitance (5 ,F cm,2) of the membrane suggests that the electric double layer is distributed over a broad region within the polyelectrolyte, and 3) electromodulation spectroscopy combined with current,voltage characteristics provide a method to determine the threshold gate voltage from an electrostatic field-effect doping to a region of (irreversible) electrochemical perturbation of the polymeric semiconductor. [source] Formation Mechanism of Hydrous Zirconia Particles Produced by the Hydrolysis of ZrOCl2 Solutions: III, Kinetics Study for the Nucleation and Crystal-Growth Processes of Primary ParticlesJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 10 2001Koji Matsui The formation rate and primary particle size of monoclinic, hydrous zirconia particles produced by the hydrolysis of various ZrOCl2 solutions (with and without the addition of HCl, NH4OH, NaCl, CaCl2, or AlCl3) were measured to clarify the effects of the H+ and Cl, ion concentrations on the nucleation and crystal-growth processes of primary particles of hydrous zirconia. Chemical-kinetic analyses, to which Avrami,Erofeev's equation was applied, and XRD measurements revealed that both the rate constant and the primary particle size of the hydrous zirconia decreased as the concentrations of H+ and/or Cl, ions produced by hydrolysis increased. The nucleation rate per unit of ZrOCl2 concentration and the crystal-growth rate of the primary particles of the hydrous zirconia were determined by analyzing the relationships between the rate constant and primary particle size. The nucleation rate per unit of ZrOCl2 concentration revealed almost no change and remained constant as the H+ and/or Cl, ion concentrations increased, except in the case of a slight increase for ZrOCl2 solutions with added HCl. The crystal-growth rate decreased as the H+ and/or Cl, ion concentration increased. The present kinetic analyses revealed that the decrease in rate constant with increasing H+ and/or Cl, ion concentrations resulted from the decrease in the crystal-growth rate. The decreasing tendency of the crystal-growth rate was attributed to interference with crystal growth by the Cl, ions attracted onto the particle surface through the formation of an electric double layer. The formation mechanisms for the primary particles of hydrous zirconia were determined based on the present experimental results. [source] High Power Density Electric Double Layer Capacitor with Improved Activated CarbonCHINESE JOURNAL OF CHEMISTRY, Issue 2 2003Yang Hui Abstract The improvement on commercial activated carbon (AC) through the reactivation under steam in the presence of NiCl2 catalyst leads to the increases of both energy and power densities of electric double layer (dl) capacitors. When AC was treated at 875 °C for 1 h, its discharge specific capacitance increases up to 53.67 F· g,1, an increase of about 25% compared to the as-received AC. Moreover, a significant increase in high rate capability of electric dl capacitor was found after the improvements. Surprisingly, both the treated and untreated AC samples showed similar specific surface area and pore size distribution, but some changes in the surface groups and their concentrations after reactivation were verified by X-photoelectron spectra. Thus, it is reasonable to conclude that the decrease in the surface concentration of the carbonyl-containing species for the improved AC results in an increase of accessibility of the pores to the organic electrolyte ion, causing the enhancements of both the specific capacitance and high rate capability. [source] High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic LiquidsADVANCED FUNCTIONAL MATERIALS, Issue 7 2009Hongtao Yuan Abstract Very recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1,×,1014 cm,2). To increase the maximum attainable carrier density for electrostatic tuning of electronic states in semiconductor field-effect transistors is a hot issue but a big challenge. Here, ultrahigh density carrier accumulation is reported, in particular at low temperature, in a ZnO field-effect transistor gated by electric double layers of ionic liquid (IL). This transistor, called an electric double layer transistor (EDLT), is found to exhibit very high transconductance and an ultrahigh carrier density in a fast, reversible, and reproducible manner. The room temperature capacitance of EDLTs is found to be as large as 34,µF cm,2, deduced from Hall-effect measurements, and is mainly responsible for the carrier density modulation in a very wide range. Importantly, the IL dielectric, with a supercooling property, is found to have charge-accumulation capability even at low temperatures, reaching an ultrahigh carrier density of 8×1014 cm,2 at 220,K and maintaining a density of 5.5×1014 cm,2 at 1.8,K. This high carrier density of EDLTs is of great importance not only in practical device applications but also in fundamental research; for example, in the search for novel electronic phenomena, such as superconductivity, in oxide systems. [source] | ||||||||||