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Edge Dislocations (edge + dislocation)
Selected AbstractsDynamics of Dislocations in a 2D Plasma CrystalCONTRIBUTIONS TO PLASMA PHYSICS, Issue 4-5 2009V. Nosenko Abstract Recent experimental results on the dislocation dynamics in a two-dimensional plasma crystal are reviewed. A single layer of micron-size microspheres was suspended in the sheath of a capacitively coupled rf discharge. The particles self-organized in a triangular lattice. Edge dislocations were created in pairs in this plasma crystal when the internal shear stress built up above a threshold, due to the crystal's slow differential rotation. Basic stages of dislocation nucleation were identified and studied, from gradual pile-up of shear strain in the crystal to eventual escape of free dislocations. After nucleation, dislocations moved supersonically with respect to the shear waves and generated shear-wave Mach cones (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Threading dislocations in domain-matching epitaxial films of ZnOJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 5 2007W.-R. Liu The structures of high-quality ZnO epitaxial films grown by pulsed-laser deposition on sapphire (0001) without an oxygen gas flow were investigated by X-ray diffraction and transmission electron microscopy. The great disparity of X-ray diffraction line widths between the normal and in-plane reflections reveals the specific threading dislocation geometry of ZnO. Most threading dislocations are pure edge dislocations. From a combination of scattering and microscopic results, it is found that threading dislocations are not uniformly distributed in the ZnO films, but the films consist of columnar epitaxial cores surrounded by annular regions of edge threading dislocations in large density. The local surface morphology and capacitance signal obtained from atomic force and scanning capacitance microscopes indicate that the aggregation of threading dislocations leads to high interface traps at the annular regions. [source] HRTEM of dislocation cores and thin-foil effects in metals and intermetallic compoundsMICROSCOPY RESEARCH AND TECHNIQUE, Issue 5 2006M.J. Mills Abstract Examples of the observation and analysis of dislocation cores and dislocation fine structure in metals and intermetallics using high resolution transmission electron microscopy are discussed. Specific examples include the 60° dislocations in aluminum, a,011, edge dislocations in NiAl, and screw dislocations in Ni3Al. The effect of the thin TEM foils on the structure and imaging of these dislocations is discussed in light of embedded atom method calculations for several configurations and coupled with image simulations. Some generalizations based on these calculations are discussed. These analyses enables determination of the spreading or decomposition of the edge component of the cores, both in and out of the glide plane, which can have significant implications for the modeling of macroscopic behavior. Microsc. Res. Tech. 69:317,329, 2006. © 2006 Wiley-Liss, Inc. [source] Nucleation, growth, and phase transformation mechanism of Ge2Sb2Te5 thin filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2009Eun Tae Kim Abstract The nucleation, growth, and metastable-to-stable phase transformation behavior of Ge2Sb2Te5 thin film were studied by means of transmission electron microscopy. The results confirm that nucleation begins at the surface of the film and proceeds by growth of grains through the thickness of film. Also, the result provides further grounds to the suggestion that some of the Ge2Sb2Te5 grains grow with an elongated grain shape to reduce interface energy between crystalline and amorphous phases at the initial stage of crystallization. We find edge dislocations in the metastable-to-stable phase transition region. We think these edge dislocations can explain the metastable-to-stable phase transformation mechanism as a result of vacancy diffusion. [source] High-quality InN grown on KOH wet etched N-polar InN template by RF-MBEPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2006D. Muto Abstract We have succeeded in dramatically decreasing the density of dislocations in InN by regrowing InN films on micro-facetted N-polar InN templates. The micro-facetted N-polar InN templates were formed by wet etching in a 10 mol/l KOH solution. InN films were regrown on the micro-facetted N-polar InN templates and on flat surface N-polar InN templates for comparison by radio-frequency plasma-assisted molecular beam epitaxy. InN regrown on micro-facetted InN had considerably smaller twist distribution than that grown on the flat InN templates. From transmission electron microscopy observation, it was confirmed that the InN grown on the micro-facetted InN template had much lower density of dislocations than that grown on the flat InN template, and moreover the propagation of edge dislocations was almost completely terminated at the interface between the regrown InN and the micro-facetted InN template. Based on the results, we propose that regrowth of InN on micro-facetted InN templates is an effective way to obtain high-quality InN films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Defect-selective etching of aluminum nitride single crystalsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007M. Bickermann Abstract We have investigated defect-selective wet chemical etching of freestanding AlN single crystals in a molten NaOH-KOH eutectic at temperatures ranging from 240 °C to 400 °C. On nitrogen polar basal planes, hexagonal pyramids/hillocks exceeding 100 µm in diameter may form within seconds of etching at 240 °C. They sometimes are arranged in lines and clusters, thus we attribute them to defects on the surface, presumably originating in the bulk material. On aluminum polar basal planes, the etch pit density after approx. 2,3 min of total etching time at 350 °C corresponds to the screw dislocation density. Additionally, significantly smaller etch pits were found around annealed indentations, in the vicinity of some bigger etch pits after repeated etching, and sometimes also isolated on the surface area. We attribute these etch pits to threading mixed and edge dislocations. On as-grown rhombohedral and prismatic facets no defect-related etching features were observed. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVDPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007Masayuki Iwami Abstract The buffer breakdown voltage and the electron mobility in a two dimensional gas (2DEG) of AlGaN/GaN HFETs on 4 inch Si(111) substrates grown by metalorganic chemical vapor deposition was investigated. The relationship between the electrical properties of HFETs and the crystalline quality of the GaN layer are studied by X-ray diffraction and photoluminescence measurements. The buffer breakdown voltage decreases with an increase in the FWHM of the X-ray (0002) diffraction peak. The electron mobility in a 2DEG decreases with an increase in FWHM of the X-ray (102) diffraction peak. These results indicate that a screw component of the threading dislocations in the GaN layer is a primary source for buffer leakage, and that edge dislocations in the GaN layer have a scattering effect on the 2DEG transport. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Interbranch transient beating of X-ray intensities in deformed crystalsACTA CRYSTALLOGRAPHICA SECTION A, Issue 4 2010M. Shevchenko X-ray dynamical diffraction in a deformed crystal is studied using the interbranch resonance concept. It is shown that appreciable beating of the X-ray intensities may be induced by a lattice distortion that produces interbranch transformations of the local dispersion surface. In X-ray plane-wave topography, this effect may be observed as interference fringes arising around the kinematical image of a defect. It is predicted that such interbranch fringes can be induced by edge dislocations. [source] | |||||||||||||