Drain Electrodes (drain + electrode)

Distribution by Scientific Domains


Selected Abstracts


Interface Engineering for Organic Electronics

ADVANCED FUNCTIONAL MATERIALS, Issue 9 2010
Hong Ma
Abstract The field of organic electronics has been developed vastly in the past two decades due to its promise for low cost, lightweight, mechanical flexibility, versatility of chemical design and synthesis, and ease of processing. The performance and lifetime of these devices, such as organic light-emitting diodes (OLEDs), photovoltaics (OPVs), and field-effect transistors (OFETs), are critically dependent on the properties of both active materials and their interfaces. Interfacial properties can be controlled ranging from simple wettability or adhesion between different materials to direct modifications of the electronic structure of the materials. In this Feature Article, the strategies of utilizing surfactant-modified cathodes, hole-transporting buffer layers, and self-assembled monolayer (SAM)-modified anodes are highlighted. In addition to enabling the production of high-efficiency OLEDs, control of interfaces in both conventional and inverted polymer solar cells is shown to enhance their efficiency and stability; and the tailoring of source,drain electrode,semiconductor interfaces, dielectric,semiconductor interfaces, and ultrathin dielectrics is shown to allow for high-performance OFETs. [source]


Sense the Electrons that Come and Go

CHEMPHYSCHEM, Issue 1 2004
Daniël Vanmaekelbergh Prof. Dr.
Electron tunneling dynamics: This highlight outlines how fluctuations in the electron number of a semiconductor quantum dot, connected to a source and drain electrode by tunneling barriers (see green circuit in the picture) and capacitively coupled to a gate electrode (black), can be measured by an independent single electron transistor (gray circuit). This allows to probe the tunneling dynamics between the quantum dot and the source and drain electrodes in the (green) quantum dot circuit with microsecond time resolution. [source]


Non-volatile Ferroelectric Poly(vinylidene fluoride- co -trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor

ADVANCED FUNCTIONAL MATERIALS, Issue 10 2009
Seok Ju Kang
Abstract A new type of nonvolatile ferroelectric poly(vinylidene fluoride- co -trifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source,drain current modulation with an ON/OFF ratio hysteresis greater than 103, which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5,×,104 s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric polymeric TFT memory. [source]


High-Performance Organic Field-Effect Transistors

ADVANCED MATERIALS, Issue 14-15 2009
Daniele Braga
Abstract With the advent of devices based on single crystals, the performance of organic field-effect transistors has experienced a significant leap, with mobility now in excess of 10,cm2 V,1 s,1. The purpose of this review is to give an overview of the state-of-the-art of these high-performance organic transistors. The paper focuses on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric,semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes. High-performance devices also constitute tools of choice for investigating charge transport phenomena in organic materials. It is shown how the combination of field-effect measurements with other electrical characterizations helps in elucidating this still unresolved issue. [source]


Near-Infrared Light-Emitting Ambipolar Organic Field-Effect Transistors,

ADVANCED MATERIALS, Issue 5 2007

Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine derivative as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with experimental results, strong metal-induced electroluminescence quenching is observed when light emission takes place in close proximity to the source,drain electrodes (see figure). [source]


Sense the Electrons that Come and Go

CHEMPHYSCHEM, Issue 1 2004
Daniël Vanmaekelbergh Prof. Dr.
Electron tunneling dynamics: This highlight outlines how fluctuations in the electron number of a semiconductor quantum dot, connected to a source and drain electrode by tunneling barriers (see green circuit in the picture) and capacitively coupled to a gate electrode (black), can be measured by an independent single electron transistor (gray circuit). This allows to probe the tunneling dynamics between the quantum dot and the source and drain electrodes in the (green) quantum dot circuit with microsecond time resolution. [source]


Enhanced Performance of Fullerene n-Channel Field-Effect Transistors with Titanium Sub-Oxide Injection Layer

ADVANCED FUNCTIONAL MATERIALS, Issue 9 2009
Shinuk Cho
Abstract Enhanced performance of n-channel organic field-effect transistors (OFETs) is demonstrated by introducing a titanium sub-oxide (TiOx) injection layer. The n-channel OFETs utilize [6,6]-phenyl-C61 butyric acid methyl ester (PC61BM) or [6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) as the semiconductor in the channel. With the TiOx injection layer, the electron mobilities of PC61BM and PC71BM FET using Al as source/drain electrodes are comparable to those obtained from OFETs using Ca as the source/drain electrodes. Direct measurement of contact resistance (Rc) shows significantly decreased Rc values for FETs with the TiOx layer. Ultraviolet photoelectron spectroscopy (UPS) studies demonstrate that the TiOx layer reduces the electron injection barrier because of the relatively strong interfacial dipole of TiOx. In addition to functioning as an electron injection layer that eliminates the contact resistance, the TiOx layer acts as a passivation layer that prevents penetration of O2 and H2O; devices with the TiOx injection layer exhibit a significant improvement in lifetime when exposed to air. [source]